FPM DRAM 30-pin SIMM
Abstract: 9715 SMART Modular Technologies 30 pin simm 16MX1 16MX1-DRAM
Text: SMART SM5091610U4PUUU Modular Technologies November 21, 1996 16MByte 16M x 9 DRAM Module - 16Mx1 based 30-pin SIMM Part Numbers Features • • • • • • • • • • Standard Configuration Access Time Operation Mode Operating Voltage Refresh
|
Original
|
SM5091610U4PUUU
16MByte
16Mx1
30-pin
SM509161004PUUU
SM509161014PUUU
60/70/80ns
300mil
16Mx1
FPM DRAM 30-pin SIMM
9715
SMART Modular Technologies
30 pin simm
16MX1-DRAM
|
PDF
|
DS555
Abstract: 72 simm function 16m x 36 60ns simm
Text: 16M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361656-S54m16TL 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656-S54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4 (TSOP2) DRAM. The module is unbuffered and
|
Original
|
361656-S54m16TL
16Mx36
DS555-05f
DS555
72 simm function
16m x 36 60ns simm
|
PDF
|
16m x 36 60ns simm
Abstract: No abstract text available
Text: 16M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 361656ES54m16TL 72 Pin 16Mx36 ECC EDO SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656ES54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4
|
Original
|
361656ES54m16TL
16Mx36
DS555-05e
16m x 36 60ns simm
|
PDF
|
ds812
Abstract: No abstract text available
Text: 16M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361606-S54s20TD 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V General Description Pin Assignment The module is a 16Mx36 bit, 20 chip, 5V, 72 Pin SIMM module consisting of (12) 16Mx4 (TSOP), (1) Voltage Regulator and (7) Bus Switches. The module is
|
Original
|
361606-S54s20TD
16Mx36
16Mx4
72-pin
DS812
ds812
|
PDF
|
30-pin simm memory "16m x 8"
Abstract: 30-pin simm memory 30-pin SIMM RAM
Text: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
|
OCR Scan
|
STI816100
30-PIN
STI816100
24-pin
STI816100-xxT)
STI816100-xxG)
30-pin simm memory "16m x 8"
30-pin simm memory
30-pin SIMM RAM
|
PDF
|
30-pin simm memory "16m x 8"
Abstract: No abstract text available
Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
|
OCR Scan
|
STI916100
30-PIN
STI916100
24-pin
STI916100-xxT)
STI916100-xxG)
30-pin simm memory "16m x 8"
|
PDF
|
ACP-12
Abstract: No abstract text available
Text: ja .1 6 .S S 3 SM5916000 16MByte 16M x 9 CMOS DRAM Module General Description The SM5916000 is a high performance, 16-megabyte dynamic RAM memory modules organized as 16M words by 9 bits, in a 30-pin, SIMM package. The module utilizes nine CMOS 16M x 1 dynamic RAMs
|
OCR Scan
|
SM5916000
16MByte
16-megabyte
30-pin,
16Mbyte
60/70/80ns
60/70/80ns)
ACP-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
|
OCR Scan
|
HYM581610
HY5117100
22//F
HYM581610M/LM/TM/LTM
350fB
891MAX.
08ffi
HYM581610TM/LTM
361MAX.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for
|
OCR Scan
|
HYM581600
HY5116100
HYM581600M/LM/TM/LTM
HYM581600TM/LTM
1BD01-00-MAY93
HYM581600M
HYM581600LM
HYM581600TM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM591610 Series »HYUNDAI SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting ol nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
HYM59161OM/LM/TM/LTM
HYM591610M/LM
HYM591610TM/LTM
1BDO4-O0-MAY93
HYM591610M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for
|
OCR Scan
|
HYM591600
HY5116100
HYM591600M/LM/TM/LTM
HYM591600M/LM
1-781MIN.
HYM591600TM/LTM
0-05f1
76MIN.
03IMIN.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
22//F
HYM59161OM/LM/TM/LTM
03IMIN.
HYM591610TM/LTM
781MIN.
031MIN.
1BD04-11-MAR94
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for
|
OCR Scan
|
HYM581600
HY5116100
HYM581600M/LM/TM/LTM
1BD01-00-MAY93
HYM58160
HYM581600TM/LTM
251MAX
01-00-M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591600
HY5116100
HYM591600M/LM/TM/LTM
HYM591600M/LM
HYM591600TM/LTM
1BD03-00-MAY93
HYM591600M
HYM591600LM
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591610
HY5117100
HYM591610M/LM/TM/LTM
HYM591610M/LM
HYMS91610TM/LTM
1BD04-00-MAY93
HYM591610M
HYM591610LM
HYM591610TM
|
PDF
|
D-0300
Abstract: No abstract text available
Text: “H Y U N D A I SEMICONDUCTOR H Y M 591600 S e r ie s 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\iF decoupling capacitor is mounted for
|
OCR Scan
|
HYM591600
HY5116100
22\iF
HYM591600M/LM/TM/LTM
1BD03-00-MAY93
HYM591600M/LM
HYM591600TM/LTM
D-0300
|
PDF
|
D0200
Abstract: No abstract text available
Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
|
OCR Scan
|
HYM581610
HY5117100
HYM581610M/LM/TM/LTM
HYM581610TM/LTM
251MAX.
1BD02-00-MA
HYM581610M
HYM581610LM
HYM581610TM
D0200
|
PDF
|
dram simm memory module samsung 30-pin 16M
Abstract: No abstract text available
Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin
|
OCR Scan
|
KMM5916100/T
16Mx9
KMM59161QG/T
KM41C16100/T
24-pin
30-pin
KMM5916100/T
KMM5916100-6
KMM5916100-7
dram simm memory module samsung 30-pin 16M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin
|
OCR Scan
|
KMM5816000/T
16Mx8
KMM5816000-6
KMM5816000-7
KMM5816000-8
KMM5816000/T
KM41C16000H'
24-pin
30-pin
|
PDF
|
CL001D16325B00J-60
Abstract: No abstract text available
Text: CELESTICA, 16M x 32 EDO SIMM FEATURES 72-pin industry standard four-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-6, 4-18 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5.0V ± 10% power supply
|
OCR Scan
|
72-pin
MO-116
20431C)
16169C
CL001D16325B00J-60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ŒLESTICA.» 16M x 36 PARITY SIMM FEATURES 72-pin industry standard 4-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-6 : No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs
|
OCR Scan
|
72-pin
MO-116
20432C)
16175C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CELESTICA, 16M x 32 EDO SIMM FEATURES • . 72-pin industry standard four-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-6 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 3.3 ± 0.3V power supply
|
OCR Scan
|
72-pin
MO-116
20431C)
16167C
|
PDF
|
mhpc
Abstract: No abstract text available
Text: CELESTICA, 16M x 32 EDO SIMM FEATURES • • • 72-pin industry standard four-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-6 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 3.3 ± 0.3V power supply
|
OCR Scan
|
72-pin
MO-116
20431C)
16171C
mhpc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CELESTICA 16M x 32 EDO SIMM FEATURES • . 72-pin industry standard four-byte single-in-line memory module JEDEC compliant: 21-C, Fig. 4-6, 4-18 Release 6 No. 95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5.0V ± 10% power supply
|
OCR Scan
|
72-pin
MO-116
20431C)
16173C
|
PDF
|
