Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    16G BGA FLASH Search Results

    16G BGA FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-40KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-33KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    16G BGA FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CSP/MICRO BGA Test & Burn-in Socket For Devices From 14 - 27mm Sq. FEATURES: • For Test & Burn-In of CSP, MicroBGA, DSP, LGA, SRAM, DRAM and Flash Devices. Consult Factory for QFP applications. • Any pitch device on 0.40mm or larger. • Pressure mounting, no soldering required.


    Original     		PDF 27mm2. UL94V-0

    23019

    Abstract: No abstract text available
    Text: CSP/MICRO BGA Test & Burn-in Socket for Devices Up to 40mm Sq. FEATURES: • For Test & Burn-In of CSP, MicroBGA, DSP, LGA, SRAM, DRAM and Flash Devices. • Any pitch device on 0.40mm or larger. • 4 Point crown insures “scrub” on solder oxides. • Single Point Probes available for small land area contact pads.


    Original     		PDF

    micro pitch BGA

    Abstract: No abstract text available
    Text: CSP/MICRO BGA Test & Burn-In Socket For Devices Up to 55mm Sq. FEATURES: • For Test & Burn-In of CSP, MicroBGA, DSP, LGA, SRAM, DRAM and Flash Devices. Consult Factory for QFP applications. • Any device on 0.40mm pitch or larger. • 4 Point crown insures “scrub” on solder oxides.


    Original     		PDF

    Hyperstone f9

    Abstract: No abstract text available
    Text: W7NxVHxxBI Embedded SLC NAND PATA SSD PBGA FEATURES   DESCRIPTION Storage Capacities: 8GB and 16GB Environment conditions: The W7NxVHxxBI is a small reliable PATA IDE solid state storage solution in a single integrated BGA package. Typical NAND related


    Original     		PDF 32-bit F4FW110301B4 Hyperstone f9

    Untitled

    Abstract: No abstract text available
    Text: High-Frequency Center Probe Test Socket for Devices up to 55mm Square FEATURES • For high-frequency test of CSP, BGA, DSP, LGA, SRAM, DRAM and Flash Devices • Any device on 0.30mm pitch or larger • 4-point crown insures “scrub” on solder oxides, while pointed probe works with


    Original     		PDF

    movinand DECODER

    Abstract: movinand 52-ULGA RNB CE package tsop1 16G BGA FLASH NAND Flash Code Information preprogram 52ULGA 1G NAND flash
    Text: NAND Flash Code Information 1/3 Last Updated : August 2009 K9XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 2. NAND Flash : 9 3. Small Classification (SLC : Single Level Cell, MLC : Multi Level Cell, SM : SmartMedia, S/B : Small Block)


    Original     		PDF

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		PDF K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND

    W7N8GVH1SB

    Abstract: CF 8G erase F01-F03 51F8 samsung 8GB Nand flash
    Text: W7NxVHxxBI PRELIMINARY* Embedded SLC NAND PATA SSD PBGA FEATURES   DESCRIPTION Storage Capacities: 8GB and 16GB Environment conditions: The W7NxVHxxBI is a small reliable PATA IDE solid state storage solution in a single integrated BGA package. Typical NAND related


    Original     		PDF 66MBytes/s W7N8GVH1SB CF 8G erase F01-F03 51F8 samsung 8GB Nand flash

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    h13h

    Abstract: M01-M03 mtbf slc PG110 w7n8g
    Text: W7NxVHxxBI ADVANCED* Embedded SLC NAND SSD PBGA FEATURES DESCRIPTION   The W7NxVHxxBI is a small reliable solid state storage solution in a single integrated BGA package. Typical NAND related concerns like proper wear leveling, sufficient error correction, as well as


    Original     		PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    MMC02G

    Abstract: LFBGA169 BGA 221 eMMC
    Text: NAND08GAH0J NAND16GAH0H 1-Gbyte, 2-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface LFBGA153 ■ Up to 2 Gbytes of formatted data storage


    Original     		PDF NAND08GAH0J NAND16GAH0H LFBGA153 MMC02G LFBGA169 BGA 221 eMMC

    MMC02G

    Abstract: emmc bga "Manufacturer ID" eMMC emmc csd NUMONYX emmc NAND08GAH0J NAND16GAH0H 221 ball eMMC memory emmc CID Manufacturer ID list eMMC
    Text: NAND08GAH0J NAND16GAH0H 1-Gbyte, 2-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface ■ Up to 2 Gbytes of formatted data storage ■ eMMC/MultiMediaCard system specification,


    Original     		PDF NAND08GAH0J NAND16GAH0H MMC02G emmc bga "Manufacturer ID" eMMC emmc csd NUMONYX emmc NAND16GAH0H 221 ball eMMC memory emmc CID Manufacturer ID list eMMC

    JESD84-A43

    Abstract: emmc EXT_CSD CMD38 NAND16GAH0P EXT_CSD emmc csd emmc sector size emmc jedec 32G nand NAND32GAH0P
    Text: NAND16GAH0P NAND32GAH0P NAND64GAH0P 2-Gbyte, 4-Gbyte, 8-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface ■ 2, 4 and 8 Gbytes of formatted data storage


    Original     		PDF NAND16GAH0P NAND32GAH0P NAND64GAH0P JESD84-A43 emmc EXT_CSD CMD38 EXT_CSD emmc csd emmc sector size emmc jedec 32G nand

    Untitled

    Abstract: No abstract text available
    Text: NAND16GAH0P NAND64GAH0P 2-Gbyte, 8-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface ■ 2 and 8 Gbytes of formatted data storage ■ eMMC/MultiMediaCard system specification,


    Original     		PDF NAND16GAH0P NAND64GAH0P

    MTFC4GACAJCN-4M IT

    Abstract: MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMVEA-4M IT, MTFC8GLVEA-4M IT, MTFC16GJVEC-4M IT, MTFC32GJVED-4M IT, MTFC64GJVDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash


    Original     		PDF MTFC16GJVEC-4M MTFC32GJVED-4M MTFC64GJVDN-4M 169-ball 09005aef84a4d6f8 64gb-it MTFC4GACAJCN-4M IT MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G

    MT29F32G08

    Abstract: MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A MT29F64G08A mt29f128g08 MT29F16G08ABA MT29F16G08A
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB


    Original     		PDF 128Gb MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F128G08AUCBB 128Gb: MT29F32G08 MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A mt29f128g08 MT29F16G08ABA MT29F16G08A

    VSC8538

    Abstract: VSC8538HJ LED37 transformerless phy
    Text: VSC8538 Octal 10/100/1000BASE-T PHY with Integrated 1.25 Gbps SerDes Datasheet VMDS-10199 Revision 4.0 June 2006 Vitesse Corporate Headquarters 741 Calle Plano Camarillo, California 93012 United States www.vitesse.com Copyright 2005–2006 by Vitesse Semiconductor Corporation


    Original     		PDF VSC8538 10/100/1000BASE-T VMDS-10199 VSC8538XHJ. J-STD-020. VSC8538 VSC8538HJ 444-pin, VSC8538XHJ LED37 transformerless phy

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		PDF K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand