KMM53616000CK
Abstract: KMM53616000CKG
Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG
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KMM53616000CK/CKG
16Mx36
16Mx4
16Mx1
KMM53616000CK/CKG
16Mx1,
KMM53616000C
KMM53616000CK
KMM53616000CKG
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ds812
Abstract: No abstract text available
Text: 16M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361606-S54s20TD 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V General Description Pin Assignment The module is a 16Mx36 bit, 20 chip, 5V, 72 Pin SIMM module consisting of (12) 16Mx4 (TSOP), (1) Voltage Regulator and (7) Bus Switches. The module is
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361606-S54s20TD
16Mx36
16Mx4
72-pin
DS812
ds812
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53631601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53631601BE0/BJ0-C
16Mx36
16Mx4
16Mx1
M53631601BE0/BJ0-C
16Mx1,
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16Mx4bit
Abstract: KMM53616004BK KMM53616004BKG
Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
KMM53616004B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
16Mx4bit
KMM53616004BK
KMM53616004BKG
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4bit Dynamic RAM
Abstract: simm 72pin HMD16M32M8GH
Text: HANBit HMD16M32M8GH 64Mbyte 16Mx36 FP Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M32M8GH GENERAL DESCRIPTION The HMD16M32M8GH is a 16M x 32bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF
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HMD16M32M8GH
64Mbyte
16Mx36)
72pin-SIMM
HMD16M32M8GH
32bit
32-pin
72-pin
4bit Dynamic RAM
simm 72pin
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DS555
Abstract: 72 simm function 16m x 36 60ns simm
Text: 16M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361656-S54m16TL 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656-S54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4 (TSOP2) DRAM. The module is unbuffered and
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361656-S54m16TL
16Mx36
DS555-05f
DS555
72 simm function
16m x 36 60ns simm
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STATIC RAM 256KX16
Abstract: "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 256KX16 512Kx1
Text: 16Mx36, 50 - 70ns, TSTACK 30A165-33 B M-Densus High Density Memory Device 8 Megabit CMOS VIDEO RAM DPO512X16MGY5-CM PRELIMINARY DESCRIPTION: The DPO512X16MGY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.
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16Mx36,
30A165-33
DPO512X16MGY5-CM
DPO512X16MGY5-CM
512Kx16
256Kx16
50/15ransition
STATIC RAM 256KX16
"Video RAM"
KM4216C528
Dynamic RAM
icc3
KM4216C258
512Kx1
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ATMG
Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
Text: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM5361600A
16Mx36
16Mx1
16Mx36-bit
HY5116100B
HYM5361600AM/ATM
HYM5361600AMG/ATMG
72-Pin
119mW
ATMG
HYM5361600AM
HYM5361600AMG
HYM5361600ATM
HYM5361600ATMG
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16m x 36 60ns simm
Abstract: No abstract text available
Text: 16M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 361656ES54m16TL 72 Pin 16Mx36 ECC EDO SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656ES54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4
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361656ES54m16TL
16Mx36
DS555-05e
16m x 36 60ns simm
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53631601CE0/CJ0-C DRAM MODULE M53631601CE0/CJ0-C
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M53631601CE0/CJ0-C
16Mx36
16Mx4
16Mx1
M53631601CE0/CJ0-C
16Mx1,
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KMM53616004CK
Abstract: KMM53616004CKG
Text: DRAM MODULE KMM53616004CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616004CK/CKG DRAM MODULE KMM53616004CK/CKG
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KMM53616004CK/CKG
16Mx36
16Mx4
16Mx1
KMM53616004CK/CKG
16Mx1,
KMM53616004C
KMM53616004CK
KMM53616004CKG
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53616000BK
KMM53616000BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53611601BE0/BJ0-C
16Mx36
16Mx4
16Mx1
M53611601BE0/BJ0-C
16Mx1,
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simm 72pin
Abstract: HMD16M36M12EG
Text: HANBit HMD16M36M12EG 64Mbyte 16Mx36 EDO/with Parity Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M36M12EG GENERAL DESCRIPTION The HMD16M36M12EG is a 16M x 36bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages and four CMOS 16Mx1bit DRAMs in SOJ or TSOP packages
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HMD16M36M12EG
64Mbyte
16Mx36)
72pin-SIMM
HMD16M36M12EG
36bit
32-pin
16Mx1bit
72-pin
simm 72pin
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pd16m
Abstract: No abstract text available
Text: WPD16M36-XMSC WHITE /MICROELECTRONICS a 16Mx36 DRAM SIMM w ith Fast Page Mode FPM FEATURES GENERAL DESCRIPTION T he W P D 1 6 M 3 6 -X M S C is a 1 6 M b it x 36 D yn a m ic RAM (DRAM) high density mem ory module. The W PD16M 36-XM SC consists of 8 CM OS 16M x 4 bit 3.3V DRAM com ponents in
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WPD16M36-XMSC
16Mx36
PD16M
36-XM
32-pin
400-m
24-pin
300-m
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Q022B
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification
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KMM53616000AKG
KMM53616000AK
16Mx36
16Mx4bit
32-pin
16Mx1bit
24-pin
72-pin
Q022B
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km44c16104ak
Abstract: 44c16104
Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs
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KMM53616004AK/AKG
KMM53616004AK/AKG
16Mx4
16Mx1,
3616004A
16Mx36bits
M53616004AK
cycles/64ms
M53616004AKG
km44c16104ak
44c16104
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KM41C16000BK
Abstract: KMM53616000AK
Text: DRAM MODULE KMM53616000A KG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G ENER AL D ESCRIPTIO N FEATURES T h e S a m s u n g K M M 5 3 6 1 6 0 0 0 A K is a 16M b it x 36 • P a ri Id e n tificatio n D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . The
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KMM53616000A
KMM53616000AK
16Mx36
KMM53616000AKG
16Mx4
16Mx1
16100AK
16000BK
KM41C16000BK
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1
72-pin
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Untitled
Abstract: No abstract text available
Text: 77 M/HITE /MICROELECTRONICS WPD16M36-XMSC 16Mx36 DRAM SIMM with Fast Page Mode FPM FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tCAC tRC tPC W PD16M 36-60M SC 60ns 15ns 110ns 40ns W PD16M 36-70M SC 70ns 20ns 130ns 45ns T he W P D 1 6 M 3 6 -X M S C is a 16M bit x 36 D yn a m ic RAM
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WPD16M36-XMSC
16Mx36
PD16M
36-60M
110ns
36-70M
130ns
36-XM
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sft 367
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 16MX36 Max. Access time (ns) Type name MH16M36AJ-6 ★ MH16M36NAJ-6 ★ MH16M36AJ-7 ★ MH16M36NAJ-7 ★ 576 MBIT Load memory Outward dimensions Data sheet W X H X D (mm) page 60 M5M416100AJ x 36 120.51 X 4 6 .3 x 8 .6
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16MX36
MH16M36AJ-6
MH16M36NAJ-6
MH16M36AJ-7
MH16M36NAJ-7
M5M416100AJ
603979776-BIT
36-BIT)
sft 367
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16M x1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
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Untitled
Abstract: No abstract text available
Text: WHITE /M ICRO ELECTRONICS WPD16M36-XMSC 16Mx36 DRAM SIM M FEATURES GENERAL DESCRIPTION • The W P D 16M 36-X M S C is a 16Mbit x 36 Dynamic RAM high density memory module. The W P D 16M 36-X M S C consists of 36 CM O S 16M x 1 bit DRAMs in 24-pin TS O P packages. The
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WPD16M36-XMSC
16Mx36
16Mbit
24-pin
72-pin
36-60M
36-70M
70nsm
15b3bTÃ
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DHR 44
Abstract: No abstract text available
Text: WPD16M36-XMSC WHITE /M ICRO ELECTRO NICS 16Mx36 DRAM SIM M GENERAL DESCRIPTION FEATURES • ^RAC ^CAC ^RC W PD16M 36-60M SC 60ns 15ns 110ns W PD16M 36-70M SC 70ns 20ns 130ns W PD16M 36-80M SC 80ns 20ns 150ns • Fast Page Mode operation • C AS-before-R AS refresh capability
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WPD16M36-XMSC
16Mx36
16Mbit
24-pin
72-pin
PD16M
36-XM
16M36
DHR 44
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