Untitled
Abstract: No abstract text available
Text: HYM72V32656T8 32Mx64, 32Mx8 based, PC100 D E S C R IP T IO N The HYM72V32656T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 166pin glass-epoxy printed
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HYM72V32656T8
32Mx64,
32Mx8
PC100
HYM72V32656T8
32Mx64bits
32Mx8bits
400mil
54pin
166pin
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hall marking code A04
Abstract: INTELDX4 write-through YSS 928
Text: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers
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INTEL486â
100-MHz
32-Bit
16K-Byte
hall marking code A04
INTELDX4 write-through
YSS 928
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Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S104CTL
KMM366S104CTL
1Mx64
1Mx16
400mil
166-pin
168-pin
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119A5
Abstract: A1 D036 DU47
Text: DENSE-PAC M ICROSYSTEM S 64 Megabyte SDRAM DIMM DPSD8MX64RW DESCRIPTION: PIN-OUT DIAGRAM The JE DEC compatible DPSD8MX64RW is a high speed 64 Megabyte CMOS Synchronous DRAM DIMM, consists of eight 4Mx4x4 SDRAM devices. These modules offer substantial advances in DRAM operating performance, including the
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DPSD8MX64RW
A10/AP
100MHz
83MHz
66MHz
166-PIN
119A5
A1 D036
DU47
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT MC-4516AC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516AC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M S D R A M : «PD4564821 are assembled.
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MC-4516AC724
16M-WORD
72-BIT
MC-4516AC724
uPD4564821
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN A R Y DATA SH EET NEC / MOS INTEGRATED CIRCUIT MC-458CB644 8 M-WORO BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C -458C B644 is a 8,388,608 words by 64 bits synchronous dynamic R A M module on which 8 pieces of 64 M
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MC-458CB644
64-BIT
MC-458CB644
uPD4564841
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I486TM
Abstract: No abstract text available
Text: in te i1 i486 MICROPROCESSOR • Binary Compatible with Large Software Base -M S -D O S *, OS/2*, Windows — UNIX* System V/386 — IRMX , IRMK™ Kernels High Performance Design — Frequent Instructions Execute in One Clock — 25 MHz and 33 MHz Clock
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i486TM
32-Bit
32-Blt
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Untitled
Abstract: No abstract text available
Text: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module The H B 56A 464E J belongs to 8 byte D IM M D ual — S tandby m ode (T TL : 504 m W (m ax) In -lin e M e m o ry M o d u le ) fa m ily , a n d h a s b e e n B uffered input ex cep t R A S and D Q
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HB56A464EJ
304-word
64-bit
6244A
168-pin
D0000
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