BSP297
Abstract: No abstract text available
Text: Rev. 2.2 BSP297 Ò Small-Signal-Transistor SIPMOS Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101
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BSP297
PG-SOT223
IEC61249221
VPS05163
BSP297
H6327:
55/150oss
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BSP297
Abstract: L6327 VPS05163
Text: BSP297 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101
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BSP297
PG-SOT223
VPS05163
L6327:
BSP297
L6327
VPS05163
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Untitled
Abstract: No abstract text available
Text: BSP297 Rev. 2.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101
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BSP297
PG-SOT223
IEC61249Â
VPS05163
H6327:
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP52N20
FDPF52N20T
FDPF52N20T
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Untitled
Abstract: No abstract text available
Text: BSP297 Rev. 1.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 VPS05163 Type Package Ordering Code
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BSP297
PG-SOT-223
VPS05163
Q67000-S068
E6327:
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p035h
Abstract: HFA16PA120CPBF HFA16PA120C HFA16PA60C IRFP250
Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A
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PD-95974
HFA16PA120CPbF
O-247AC
HFA16PA120C
O-247,
p035h
HFA16PA120CPBF
HFA16PA60C
IRFP250
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B120
Abstract: HFA08TB120 IRFP250
Text: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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PD-95736
HFA08TB120PbF
140nC
O-220AC
HFA08TB120
ad08TB120PbF
O-220,
B120
IRFP250
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD -2.361 rev. A 11/00 HFA16PA120C HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • * 2 Features VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF max. = 3.3V
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HFA16PA120C
O-247AC
HFA16PA120C
O-247,
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irfp250 applications
Abstract: marking code C76 HFA08PB120 IRFP250
Text: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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5680A
HFA08PB120PbF
140nC
O-247AC
HFA08PB120
cons20PbF
O-247,
irfp250 applications
marking code C76
IRFP250
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Untitled
Abstract: No abstract text available
Text: BSP297 Rev. 1.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information
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BSP297
PG-SOT-223
VPS05163
BSP297
P-SOT-223
E6327:
L6327:
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diode 66a
Abstract: SMD TRANSISTOR MARKING 94 BSP297 BSP297 200V marking 66a MARKING QG 6 PIN E6327 L6327 VPS05163
Text: BSP297 Rev. 1.21 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information
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BSP297
PG-SOT-223
P-SOT-223
E6327:
L6327:
VPS05163
diode 66a
SMD TRANSISTOR MARKING 94
BSP297
BSP297 200V
marking 66a
MARKING QG 6 PIN
E6327
L6327
VPS05163
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BSP297
Abstract: E6327 Q67000-S068 VPS05163
Text: BSP297 Rev. 1.0 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking
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BSP297
OT-223
VPS05163
Q67000-S068
E6327:
BSP297
E6327
Q67000-S068
VPS05163
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Untitled
Abstract: No abstract text available
Text: BSP297 Rev. 1.22 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information
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BSP297
PG-SOT-223
VPS05163
L6327:
BSP297
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Untitled
Abstract: No abstract text available
Text: PD - 95680 HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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HFA08PB120PbF
140nC
O-247AC
HFA08PB120
O-247,
O-247AC
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HFA08TB120
Abstract: IRFP250
Text: Bulletin PD -2.383 rev. C 11/00 HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V VF typ. * = 2.4V BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08TB120
140nC
O-220AC
HFA08TB120
constr33
IRFP250
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Untitled
Abstract: No abstract text available
Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252
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SPD07N20
SPU07N20
P-TO251
P-TO252
Q67040-S4120-A2
Q67040-S4112-A2
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HFA16PA120C
Abstract: IRFP250 irrm1
Text: Bulletin PD -2.361 rev. B 05/01 HFA16PA120C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • * 2 VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF max. = 3.3V IF (AV) = 8.0A
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HFA16PA120C
O-247AC
HFA16PA120C
O-247,
IRFP250
irrm1
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HFA08TB120
Abstract: No abstract text available
Text: Bulletin PD -2.383 rev. B 04/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 1200V VF typ. * = 2.4V Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions
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HFA08TB120
140nC
O-220AC
HFA08TB120
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Untitled
Abstract: No abstract text available
Text: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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5680A
HFA08PB120PbF
140nC
O-247AC
HFA08PB120
08-Mar-07
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94055
Abstract: P035H IRFP250 HFA16PA120C HFA16PA60C
Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A
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PD-95974
HFA16PA120CPbF
O-247AC
HFA16PA120C
12-Mar-07
94055
P035H
IRFP250
HFA16PA60C
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4 switched reluctance motor miller
Abstract: APTM20DHM08 mosfet 400a 200V
Text: APTM20DHM08 Asymmetrical - bridge MOSFET Power Module VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features · · · · OUT1 G1 VBUS Power MOS 7 MOSFETs
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APTM20DHM08
profil1000
4 switched reluctance motor miller
APTM20DHM08
mosfet 400a 200V
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Untitled
Abstract: No abstract text available
Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,
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KSM61N20
O-220
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Untitled
Abstract: No abstract text available
Text: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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PD-95736
HFA08TB120PbF
140nC
O-220AC
HFA08TB120
08-Mar-07
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94055
Abstract: No abstract text available
Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A
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PD-95974
HFA16PA120CPbF
O-247AC
HFA16PA120C
08-Mar-07
94055
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