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    160V 200A TRANSISTOR Search Results

    160V 200A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    160V 200A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSP297

    Abstract: No abstract text available
    Text: Rev. 2.2 BSP297 Ò Small-Signal-Transistor SIPMOS Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101


    Original     		BSP297 PG-SOT223 IEC61249221 VPS05163 BSP297 H6327: 55/150oss PDF

    BSP297

    Abstract: L6327 VPS05163
    Text: BSP297 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101


    Original     		BSP297 PG-SOT223 VPS05163 L6327: BSP297 L6327 VPS05163 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP297 Rev. 2.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101


    Original     		BSP297 PG-SOT223 IEC61249Â VPS05163 H6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP52N20 FDPF52N20T FDPF52N20T PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP297 Rev. 1.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 VPS05163 Type Package Ordering Code


    Original     		BSP297 PG-SOT-223 VPS05163 Q67000-S068 E6327: PDF

    p035h

    Abstract: HFA16PA120CPBF HFA16PA120C HFA16PA60C IRFP250
    Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A


    Original     		PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C O-247, p035h HFA16PA120CPBF HFA16PA60C IRFP250 PDF

    B120

    Abstract: HFA08TB120 IRFP250
    Text: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A


    Original     		PD-95736 HFA08TB120PbF 140nC O-220AC HFA08TB120 ad08TB120PbF O-220, B120 IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD -2.361 rev. A 11/00 HFA16PA120C HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • * 2 Features VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF max. = 3.3V


    Original     		HFA16PA120C O-247AC HFA16PA120C O-247, PDF

    irfp250 applications

    Abstract: marking code C76 HFA08PB120 IRFP250
    Text: PD - 95680A HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A


    Original     		5680A HFA08PB120PbF 140nC O-247AC HFA08PB120 cons20PbF O-247, irfp250 applications marking code C76 IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP297 Rev. 1.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information


    Original     		BSP297 PG-SOT-223 VPS05163 BSP297 P-SOT-223 E6327: L6327: PDF

    diode 66a

    Abstract: SMD TRANSISTOR MARKING 94 BSP297 BSP297 200V marking 66a MARKING QG 6 PIN E6327 L6327 VPS05163
    Text: BSP297 Rev. 1.21 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information


    Original     		BSP297 PG-SOT-223 P-SOT-223 E6327: L6327: VPS05163 diode 66a SMD TRANSISTOR MARKING 94 BSP297 BSP297 200V marking 66a MARKING QG 6 PIN E6327 L6327 VPS05163 PDF

    BSP297

    Abstract: E6327 Q67000-S068 VPS05163
    Text: BSP297 Rev. 1.0 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking


    Original     		BSP297 OT-223 VPS05163 Q67000-S068 E6327: BSP297 E6327 Q67000-S068 VPS05163 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP297 Rev. 1.22 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information


    Original     		BSP297 PG-SOT-223 VPS05163 L6327: BSP297 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95680 HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A


    Original     		HFA08PB120PbF 140nC O-247AC HFA08PB120 O-247, O-247AC PDF

    HFA08TB120

    Abstract: IRFP250
    Text: Bulletin PD -2.383 rev. C 11/00 HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V VF typ. * = 2.4V BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4


    Original     		HFA08TB120 140nC O-220AC HFA08TB120 constr33 IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252


    Original     		SPD07N20 SPU07N20 P-TO251 P-TO252 Q67040-S4120-A2 Q67040-S4112-A2 PDF

    HFA16PA120C

    Abstract: IRFP250 irrm1
    Text: Bulletin PD -2.361 rev. B 05/01 HFA16PA120C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • * 2 VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF max. = 3.3V IF (AV) = 8.0A


    Original     		HFA16PA120C O-247AC HFA16PA120C O-247, IRFP250 irrm1 PDF

    HFA08TB120

    Abstract: No abstract text available
    Text: Bulletin PD -2.383 rev. B 04/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 1200V VF typ. * = 2.4V Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions


    Original     		HFA08TB120 140nC O-220AC HFA08TB120 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95680A HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A


    Original     		5680A HFA08PB120PbF 140nC O-247AC HFA08PB120 08-Mar-07 PDF

    94055

    Abstract: P035H IRFP250 HFA16PA120C HFA16PA60C
    Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A


    Original     		PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C 12-Mar-07 94055 P035H IRFP250 HFA16PA60C PDF

    4 switched reluctance motor miller

    Abstract: APTM20DHM08 mosfet 400a 200V
    Text: APTM20DHM08 Asymmetrical - bridge MOSFET Power Module VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Application • · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features · · · · OUT1 G1 VBUS Power MOS 7 MOSFETs


    Original     		APTM20DHM08 profil1000 4 switched reluctance motor miller APTM20DHM08 mosfet 400a 200V PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,


    Original     		KSM61N20 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A


    Original     		PD-95736 HFA08TB120PbF 140nC O-220AC HFA08TB120 08-Mar-07 PDF

    94055

    Abstract: No abstract text available
    Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A


    Original     		PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C 08-Mar-07 94055 PDF