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    16010A Search Results

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    Essentra Components GRF16010A

    PUSH FIT BUMPER FOOT: 9.8 MM (0.
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    DigiKey GRF16010A Box 9,815 1
    • 1 $0.29
    • 10 $0.224
    • 100 $0.1771
    • 1000 $0.14525
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    RS GRF16010A Bulk 20 Weeks 10,000
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    • 10000 $0.133
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    RAF Electronic Hardware M1481-6010-AL

    13MM HEX X 52MM X M6 THD
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    DigiKey M1481-6010-AL Bulk 3 1
    • 1 $7.94
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    RAF Electronic Hardware M2261-6010-AL

    13MM HEX X 6MM X M6 THD
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    DigiKey M2261-6010-AL Bulk 2 1
    • 1 $4.43
    • 10 $3.553
    • 100 $2.9549
    • 1000 $2.54113
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    Mouser Electronics M2261-6010-AL
    • 1 $3.78
    • 10 $3.11
    • 100 $2.96
    • 1000 $2.96
    • 10000 $2.96
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    Anytek Technology Corporation Ltd TS16010A0000G

    TERM BLOCK PLUG 16POS 7.62MM
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    DigiKey TS16010A0000G Bulk 3,015
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    RS TS16010A0000G Bulk 3,015
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    TME TS16010A0000G 3,015
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    Interstate Connecting Components TS16010A0000G
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    RAF Electronic Hardware M1461-6010-AL

    13MM HEX X 14MM X M6 THD
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    DigiKey M1461-6010-AL Bulk 69
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    • 100 $2.75043
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    16010A Datasheets Context Search

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    bipolar transistor td tr ts tf

    Abstract: AN952 16010a
    Contextual Info: MOTOROLA Order this document by 16010A/D SEMICONDUCTOR TECHNICAL DATA M JW 16010A * D esigner’s Data Sheet ‘ Motorola Preferred Device NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in


    OCR Scan     		MJW16010A/D 6010A 6010A 340K-01 bipolar transistor td tr ts tf AN952 16010a PDF

    fdt1600n10alz

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while


    Original     		FDT1600N10ALZ FDT1600N10ALZ OT-223 PDF

    Contextual Info: Preliminary FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description „ RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDT1600N10ALZ FDT1600N10ALZ PDF

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		FDT1600N10ALZ PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF