CM1600HC-34H
Abstract: mitsubishi inverter air conditioning igbt mitsubishi mitsubishi The label version
Text: MITSUBISHI HVIGBT MODULES CM1600HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1600HC-34H ● IC . 1600A ● VCES . 1700V
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CM1600HC-34H
/-15V
10K/kW
17K/kW
CM1600HC-34H
mitsubishi inverter air conditioning
igbt mitsubishi
mitsubishi The label version
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1600/1200R17HP4_B2 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A TypischeAnwendungen • Chopper-Anwendungen • Hochleistungsumrichter • Traktionsumrichter
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FD1600/1200R17HP4
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R17HP4_B2 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A
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FZ1600R17HP4
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fuji igbt
Abstract: 1mbi1600u4c-170 IGBT- module 1mbi1600u
Text: 1MBI1600U4C-170 IGBT Modules IGBT MODULE U series 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
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1MBI1600U4C-170
fuji igbt
1mbi1600u4c-170
IGBT- module
1mbi1600u
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FZ1600R17
Abstract: FZ1600R17HP4_B21 FZ1600R17HP4-B21
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R17HP4_B21 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A
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FZ1600R17HP4
FZ1600R17
FZ1600R17HP4_B21
FZ1600R17HP4-B21
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1796I
Abstract: FF800R17KP4_B2
Text: TechnischeInformation/technicalinformation FF800R17KP4_B2 IHM-AModulmitsoftschaltendemTrench-IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/Preliminarydata V†Š» = 1700V I† ÒÓÑ = 800A / I†ç¢ = 1600A TypischeAnwendungen
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FF800R17KP4
1796I
FF800R17KP4_B2
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1600R17HP4_B21 IHM-B模块采用软特性的沟槽栅IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A 典型应用
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FZ1600R17HP4
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF800R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 800A / ICRM = 1600A 典型应用
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FF800R17KP4
150in
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF800R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 800A / ICRM = 1600A 典型应用 • 大功率变流器
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FF800R17KP4
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Untitled
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD1600/1200R17HP4_B2 初步数据/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A 典型应用 • 斩波应用 • 大功率变流器 • 大功率变流器 • 风力发电机 TypicalApplications
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FD1600/1200R17HP4
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CM1600HC-34H
Abstract: No abstract text available
Text: 三菱半導体〈HVIGBTモジュール〉 CM1600HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 大電力スイッチング用 絶縁形 CM1600HC-34H ¡IC …………………………………………… 1600A
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CM1600HC-34H
/-15V
10K/kW
17K/kW
CM1600HC-34H
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17kf6
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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FZ166B2
17kf6
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IC2500
Abstract: FZ 800 R 12 KF6
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FZ1600R17KF6B2
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FZ1600R17KF6C
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FZ1600R17KF6C
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CM1600HB-34H
Abstract: SWITCHING TRANSISTOR 144
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM1600HB-34H
CM1600HB-34H
SWITCHING TRANSISTOR 144
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FZ1600R17KF6C
Abstract: FZ1600R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FZ1600R17KF6C
FZ1600R17KF6CB2
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NF 838 G
Abstract: FZ1600R17KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FZ1600R17KF6C
NF 838 G
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CM1600HC-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM1600HC-34H
CM1600HC-34H
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DIM1600ECM17-A000
Abstract: DIM1600ECM17-A
Text: Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 LN28672 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM1600ECM17-A000
DS6069-1
LN28672)
DIM1600ECM17-A000
DIM1600ECM17-A
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data sheet IC 7400
Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon
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DIM1600FSM17-
DS5455-3
LN26327)
data sheet IC 7400
IC 7400 datasheet
information OF ic 7400
DIM1600FSM17-A000
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Untitled
Abstract: No abstract text available
Text: DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 LN27663 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM1600FSM17-A000
DS5455-3
DS5455-4
LN27663)
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DIM1600FSS17-A000
Abstract: No abstract text available
Text: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)
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DIM1600FSS17-A000
DS5833-1
LN23957)
DIM1600FSS17-A000
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TRANSISTOR C 5857
Abstract: DIM1600NSM17-E000
Text: DIM1600NSM17-E000 DIM1600NSM17-E000 Single Switch IGBT Module Replaces December 2003 version, issue PDS5621-2.0 FEATURES PDS5621-3.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ
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DIM1600NSM17-E000
PDS5621-2
PDS5621-3
TRANSISTOR C 5857
DIM1600NSM17-E000
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