1600-02P
Abstract: 1600 v mosfet VMO 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25
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1600-02P
14Source
20100302b
1600-02P
1600 v mosfet
VMO 1600-02P
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ZY180L
Abstract: VMO 1600-02P 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900 1600
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1600-02P
14Source
20100302b
ZY180L
VMO 1600-02P
1600-02P
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ZY180L
Abstract: VMO 1600-02P
Text: VMO 1600-02P Advanced Technical Information PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.65 mW N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C
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1600-02P
UL758,
ZY180L
VMO 1600-02P
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15N160
Abstract: 40N160 9N160 40N140
Text: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140
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O-247
9N140
9N160
15N140
20N140
20N160
40N140
40N160
15N160
40N160
9N160
40N140
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ZY180L
Abstract: 1600 v mosfet
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode Preliminary data D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C
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1600-02P
14Source
20090924a
ZY180L
1600 v mosfet
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Untitled
Abstract: No abstract text available
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900
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1600-02P
20100302b
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.25N16
Abstract: 25N160
Text: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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25N160
IC110
O-247
O-268
.25N16
25N160
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Untitled
Abstract: No abstract text available
Text: VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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25N160
IC110
O-247
O-2684.
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VUM33-06PH
Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
VUM33-06PH
33-06PH
vum33
Fast Recovery Bridge Rectifier, 60A, 600V
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100611a
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Untitled
Abstract: No abstract text available
Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES
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9N160G
O-247
9-140/160G
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IXBH 9N160G
Abstract: IXBH9N160G 9N160G
Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES
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9N160G
O-247
9N160G
9-140/160G
IXBH 9N160G
IXBH9N160G
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9n160g
Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data
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9N140G
9N160G
O-247
9N140G
9-140/160G
9n160g
IXBH 9N160G
D-68623
ixbh9n160g
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Untitled
Abstract: No abstract text available
Text: LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 13.8 dB gain @ 1600 MHz ■ BeO free package
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LET16060C
2002/95/EC
LET16060C
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Untitled
Abstract: No abstract text available
Text: LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 60 W with 13.8 dB gain @ 1600 MHz • BeO free package
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LET16060C
2002/95/EC
LET16060C
DocID022249
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PDF
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Untitled
Abstract: No abstract text available
Text: LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @28 V = 45 W with 16 dB gain @ 1600 MHz • BeO free package
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LET16045C
2002/95/EC
LET16045C
DocID022224
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IXYS DSA 110-16F
Abstract: 110-16F IXYS DSA 110-18F 110-18F DO-205 IXYS DSA D-68623 DO30 110-08F 110-12F
Text: DS 110 DSA 110 Rectifier Diodes Avalanche Diodes V V 900 1300 1300 1700 1900 V - VRRM = 800 - 1800 V IF RMS = 250 A IF(AV)M = 160 A DO-205 AC V(BR)min ① V R R M V RSM DSI 110 DSAI 110 800 1200 Anode Cathode on on DS DS 1300 1200 1750 1600 1950 1800 stud
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DO-205
110-08F
110-12F
110-16F
110-18F
IXYS DSA 110-16F
110-16F
IXYS DSA 110-18F
110-18F
IXYS DSA
D-68623
DO30
110-08F
110-12F
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BERULUB FR 16
Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits
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ISOPLUS247
UC3854A
UC3854B
DN-44,
TDA4817
BERULUB FR 16
ixys vuo 52-16
ups PURE SINE WAVE schematic diagram
Vienna Rectifier
TL 82036
BERULUB FR 43
UC3858
schema inverter welding
veridul
BERULUB FR 16 B
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Untitled
Abstract: No abstract text available
Text: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode VCES ^C25 v¥ CE sat tfi 1400/1600 V 40 A 6V 140 ns Advanced data Symbol Test Conditions V CES V CGR Td = 25°C to 150°C 1400 1600 V ^ 1400 1600
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40N140
40N160
40N160
O-247
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode Test Conditions V CES Tj = 25°C to 150°C 1400 1600 V V CGR ^ 1400 1600 V = 25°C to 150°C; RGE = 1 M£i Continuous ±20 V V GEM Transient
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40N140
40N160
O-247
D-68623
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40N160
Abstract: 6c-5 40N140 BiMOSFET
Text: □ IX Y S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES = 1400/1600 V N-Channel, Enhancement Mode S ym bol T e s t C o n d itio n s M axim u m R a tin g s 40N 140 40N 160 V CES T j = 25°C to 150°C 1400 1600 V V CGR
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40N140
40N160
40N140
40N160
6c-5
BiMOSFET
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Untitled
Abstract: No abstract text available
Text: s e MIKRON Absolute Maximum Ratings Symbol Conditions 1 Values = 20 kQ Tcase — 25 °C Tease = 100 °C 10 Rqs dgr Id Id m Vgs Pd Tj, Tstg Visot humidity climate V V A A A V W °C V 200 200 4502 330 1600 ±20 2000 55 . . .+150 2 500 Class F 55/150/56 V ds
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13citances
13bb71
000bG7G
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Untitled
Abstract: No abstract text available
Text: n ix Y S Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor V CES IXBH 20N140 IXBH 20N160 ^C25 V CE sat N -C hannel, E n hance m en t M ode tfi 1400/1600 V 20 A 5.4 V typ. 35 ns TO-247 AD Symbol Conditions Maximum Ratings
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20N140
20N160
O-247
D-68623
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