Untitled
Abstract: No abstract text available
Text: K9K1G08U0A-VCB0,VIB0,FCB0,FIB0 K9K1G16U0A-YCB0,YIB0,PCB0,PIB0 K9K1G08U0A-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Initial issue. Remark Mar. 17th 2003
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K9K1G08U0A-VCB0
K9K1G16U0A-YCB0
K9K1G08U0A-YCB0
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K9K1G08U0A-YCB0
Abstract: No abstract text available
Text: K9K1G08U0A-VCB0,VIB0,FCB0,FIB0 K9K1G16U0A-YCB0,YIB0,PCB0,PIB0 K9K1G08U0A-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Initial issue. Remark Mar. 17th 2003
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K9K1G08U0A-VCB0
K9K1G16U0A-YCB0
K9K1G08U0A-YCB0
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K9K1G16Q0A
Abstract: 63FBGA K9K1G08Q0A K9K1G08U0A K9K1G16U0A
Text: Preliminary K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Mar. 17th 2003 Preliminary 0.1 1. Note is added. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
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K9K1G08Q0A
K9K1G16Q0A
K9K1G08U0A
K9K1G16U0A
63FBGA
K9K1G16Q0A
K9K1G16U0A
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IC 4093
Abstract: K9K1G08U0A K9K1G16U0A 63FBGA K9K1G08Q0A K9K1G08Q0A-GCB0 K9K1G08U0A-YCB0
Text: Preliminary K9K1G08Q0A K9K1G08U0A K9K1G16U0A FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Mar. 17th 2003 Preliminary 0.1 1. Note is added. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
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K9K1G08Q0A
K9K1G08U0A
K9K1G16U0A
63FBGA
K9K1G08Q0A-GCB0
K9K1G16Q0A-DC
IC 4093
K9K1G16U0A
K9K1G08Q0A
K9K1G08U0A-YCB0
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IC 4093 pin block diagram
Abstract: K9K1G08U0A 512M x 8 Bit NAND Flash Memory IC 4093 63FBGA K9K1G08Q0A K9K1G08Q0A-GCB0 K9K1G16U0A k9k1g08u0a-ycb0 K9K1G08U0A-Y
Text: Preliminary K9K1G08Q0A K9K1G08U0A K9K1G16U0A FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Mar. 17th 2003 Advance 0.1 1. Note is added. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
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K9K1G08Q0A
K9K1G08U0A
K9K1G16U0A
63FBGA
K9K1G08Q0A-GCB0
K9K1G16Q0A-DC
IC 4093 pin block diagram
512M x 8 Bit NAND Flash Memory
IC 4093
K9K1G08Q0A
K9K1G16U0A
k9k1g08u0a-ycb0
K9K1G08U0A-Y
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K9K1G08UOM
Abstract: samsung 1Gb nand flash samsung NAND Flash DIE 256M16 NAND FLASH BGA ISNF256M16LTC
Text: Data Sheet Part No. ISNF256M16LTC Irvine Sensors Corporation Microelectronics Products Division 4 Gigabit 256M x 16 FLASH Memory Stack Features: q q Low Profile, Same PCB area as a single
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ISNF256M16LTC
K9K1G08UOM
samsung 1Gb nand flash
samsung NAND Flash DIE
256M16
NAND FLASH BGA
ISNF256M16LTC
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sst ata flash disk schematic
Abstract: s71211 T1016 55ld017 F0418
Text: ATA Flash Disk Controller SST55LD017A SST55017AATA Flash Disk Controller Advance Information FEATURES: • Industry Standard ATA/IDE Bus Interface – Host Interface: 8 or 16 bit access – Support up to PIO Mode-4 • Interface for standard NAND Flash Media
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SST55LD017A
SST55017AATA
SST55LD017A-40-C-TQW
SST55LD017A-40-I-TQW
S71211-00-000
sst ata flash disk schematic
s71211
T1016
55ld017
F0418
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hard disk ATA pcb schematic
Abstract: 74ALVCH244 B7AD hard disk 2,5 ATA pcb schematic sandisk purge sdtnf SDTNF sandisk SDTNF-256 SDTNFAH-128 sst ata flash disk schematic
Text: ATA Flash Disk Controller SST55LD017D SST55017DHigh-Capacity ATA Flash Disk Controller Preliminary Specifications FEATURES: • Industry Standard ATA/IDE Bus Interface – Host Interface: 8- or 16-bit access – Supports up to PIO Mode-4 • Interface for standard NAND Flash Media
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SST55LD017D
SST55017DHigh-Capacity
16-bit
MS-026
100-tqfp-TQW-0
100-LEAD
S71225-00-000
hard disk ATA pcb schematic
74ALVCH244
B7AD
hard disk 2,5 ATA pcb schematic
sandisk purge
sdtnf
SDTNF sandisk
SDTNF-256
SDTNFAH-128
sst ata flash disk schematic
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Untitled
Abstract: No abstract text available
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
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K9K2G08U0M-YCB0
Abstract: 128Mx16bit
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G16Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9K2G08U0M-VCB0,VIB0 Advance FLASH MEMORY K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9K2G08Q0M-YCB0
K9K2G16Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16U0M-YCB0
K9K2G08U0M-VCB0
128Mx16bit
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48-pin TSOP
Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
48-pin TSOP
K9K2G08U0M
48-pin TSOP (I) flash memory
samsung 1Gb nand flash
SAMSUNG 4gb NAND Flash Qualification Report
K9K2G08Q0M-Y
K9K2G16Q0M-Y
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SDTNF-256
Abstract: sdtnf T12180 SDTNF sandisk B7AD SDTNFAH-128 74ALVCH244 hard disk 2,5 ATA pcb schematic hard disk ATA pcb schematic SDTNFbH-1024
Text: ATA Flash Disk Controller SST55LD017D SST55017DHigh-Capacity ATA Flash Disk Controller EOL Product Document FEATURES: • Industry Standard ATA/IDE Bus Interface – Host Interface: 8- or 16-bit access – Supports up to PIO Mode-4 • Interface for standard NAND Flash Media
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SST55LD017D
SST55017DHigh-Capacity
16-bit
100-tqfp-TQW-0
100-LEAD
S71225
SST55LD017x
S71312
S71225-01-EOL
SDTNF-256
sdtnf
T12180
SDTNF sandisk
B7AD
SDTNFAH-128
74ALVCH244
hard disk 2,5 ATA pcb schematic
hard disk ATA pcb schematic
SDTNFbH-1024
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NAND Flash controller ecc
Abstract: pdf schematic flash disk 55LD017A 55ld017 sst ata flash disk schematic disk controller flash disc schematic NAND flash differences samsung 1Gb nand flash write-verify
Text: ATA Flash Disk Controller SST55LD017A / SST55LD017B / SST55LD017C SST55017A/B/CATA Flash Disk Controller Preliminary Specifications • Industry Standard ATA/IDE Bus Interface – Host Interface: 8 or 16 bit access – Support up to PIO Mode-4 • Interface for standard NAND Flash Media
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SST55LD017A
SST55LD017B
SST55LD017C
SST55017A/B/CATA
SST55LD017A:
SST55LD017B/SST55LD017C:
SST55LD017A-40-C-TQW
SST55LD017A-40-I-TQW
SST55LD017B-40-C-TQW
SST55LD017B-40-I-TQW
NAND Flash controller ecc
pdf schematic flash disk
55LD017A
55ld017
sst ata flash disk schematic
disk controller
flash disc schematic
NAND flash differences
samsung 1Gb nand flash
write-verify
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K9F1G08U0A
Abstract: SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics
Text: W86L157 WINBOND MMC CARD CONTROLLER -I- Publication Release Date: December 2, 2004 Revision 0.7 W86L157 Preliminary Revision History VERSION ON WEB PAGES DATES VERSION 1 - 2/2004 0.5 First published. 2 16 4/6/2004 0.6 Add 48-pin LQFN package 3 18, 19 12/2/2004
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W86L157
W86L157
48-pin
produ480,
K9F1G08U0A
SAMSUNG 413 K9F1G08U0M
SAMSUNG 413 K9K1G08U0A
48-LQFN
2936A
K9F5608U0C
Flash Memory mmc
"Flash Memory select"
CSDN
cdi schematics
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IC 4093
Abstract: K9K1G08U0M-YIB0 K9K1G08U0M K9K1G08U0M-YCB0 K9K1G08U0M-YCB0T
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
IC 4093
K9K1G08U0M-YIB0
K9K1G08U0M
K9K1G08U0M-YCB0
K9K1G08U0M-YCB0T
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Apr. 7th 2001 Final Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
K9K1G08U0M-YCB0
48-Pin
1220F
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K9K1G08U0B
Abstract: No abstract text available
Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
K9K1G08U0B
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K9K1G08U0B
Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
K9K1G08U0B
K9K1G08B0B
K9K1G08R0B
528-byte
3310H
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
047MAX
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K9K1G08U0M-YCB0
Abstract: IC 4093 K9K1G08U0M K9K1G08U0M-YIB0
Text: FLASH MEMORY K9K1G08U0M Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets
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K9K1G08U0M
Page28]
48-Pin
1220F
047MAX
K9K1G08U0M-YCB0
IC 4093
K9K1G08U0M
K9K1G08U0M-YIB0
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a1-a10
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
047MAX
a1-a10
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K9F4G08 512MB NAND Flash
Abstract: Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash
Text: S3F49FAX FLASH Controllers for Compact Flash / PC Card / IDE Disk REFERENCE GUIDE MANUAL HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) REFERENCE GUIDE MANUAL S3F49FAX Table of Contents 1.1
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S3F49FAX
S3F49FAX
K9F4G08 512MB NAND Flash
Samsung k9f1208
K9F1G08
hard disk ATA pcb schematic
K9F4G08
SAMSUNG NAND FLASH K9F1G08
K9F1208
k9f2g08
SAMSUNG NAND FLASH K9F5608
samsung nand flash
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SAMSUNG NAND FLASH
Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for
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AN1838
Byte/264
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
SAMSUNG NAND FLASH
Samsung 256 Gbit nand
NAND01G cache program
Samsung k9f1208u
K9F1208U0M
NAND FLASH BGA
Samsung Nand
tbga 6x8 Package
WSOP48
bga 6x8
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