HY27UF082G2A
Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
HY27UF082G2A
HY27UF162G2A
hy27uf082G
hy27uf082
52-ULGA
hynix nand 2G
hynix nand flash 2gb
hynix nand
hynix nand spare area
|
hynix NAND ECC
Abstract: reset nand flash HYNIX hynix nand spare area hynix nand flash 2gb transistor Marking 1K32 63FBGA 256kb nand flash Hynix E NAND hynix nand PROGRAMMING
Text: Preliminary HY27UG162G5A Series 2Gbit 128Mx16bit NAND Flash 2Gb NAND FLASH HY27UG162G5A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UG162G5A
128Mx16bit)
HY27UG162G5A
hynix NAND ECC
reset nand flash HYNIX
hynix nand spare area
hynix nand flash 2gb
transistor Marking 1K32
63FBGA
256kb nand flash
Hynix E NAND
hynix nand PROGRAMMING
|
HY27UG082
Abstract: No abstract text available
Text: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004
|
Original
|
PDF
|
HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
HY27UG082
|
hy27uf082
Abstract: hy27uf082G
Text: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary
|
Original
|
PDF
|
HY27UF
256Mx8bit
128Mx16bit)
hy27uf082
hy27uf082G
|
hy27uf082G
Abstract: No abstract text available
Text: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005
|
Original
|
PDF
|
HY27UF
256Mx8bit
128Mx16bit)
hy27uf082G
|
hy27uf082
Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
hy27uf082
hy27uf082G2
hy27uf082G
HY27UF082G2A
HY27UF162G2A
hynix nand 2G
hynix nand flash 2gb
2gbit
hynix nand flash 4Gb
|
HY27UG082G2M
Abstract: No abstract text available
Text: HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004 Preliminary
|
Original
|
PDF
|
HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
100ns
HY27UG082G2M
|
Untitled
Abstract: No abstract text available
Text: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004
|
Original
|
PDF
|
HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
|
HY27UG082G2M
Abstract: HY27UG hynix hy27 HY27 48-WSOP1
Text: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004
|
Original
|
PDF
|
HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
appl33.
HY27UG082G2M
hynix hy27
HY27
48-WSOP1
|
hy27uf082
Abstract: hy27uf082G2 hynix nand hynix nand flash 4Gb HY27UF082G2A 2gbit HY27UF marking GG HY27UF162G2A 2GB Nand flash
Text: Preliminary HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
hy27uf082
hy27uf082G2
hynix nand
hynix nand flash 4Gb
HY27UF082G2A
2gbit
marking GG
HY27UF162G2A
2GB Nand flash
|
HY27SF082G2B
Abstract: hynix nand flash 1.8v 4Gb RXW Series hynix nand edc spare area code hynix nand hynix nand 2G NAND FLASH 64MB hynix 1.8 memory flash 48-TSOP1 hynix nand flash 2gb
Text: 1 HY27SF 08/16 2G2B Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27SF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27SF
256Mx8bit/128Mx16bit)
HY27SF082G2B
hynix nand flash 1.8v 4Gb
RXW Series
hynix nand edc spare area code
hynix nand
hynix nand 2G
NAND FLASH 64MB
hynix 1.8 memory flash
48-TSOP1
hynix nand flash 2gb
|
48-pin TSOP
Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001
|
Original
|
PDF
|
K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
48-pin TSOP
K9K2G08U0M
48-pin TSOP (I) flash memory
samsung 1Gb nand flash
SAMSUNG 4gb NAND Flash Qualification Report
K9K2G08Q0M-Y
K9K2G16Q0M-Y
|
3DSD2G16VS4364
Abstract: 3D-PLUS
Text: MEMORY MODULE SDRAM 128Mx16-SOP 3D SD2G16VS4364 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 2128Mx16, based on 128Mx4 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Stack of four 512Mbit SDRam. - Organized as 128Mx16-bit. - Single +3.3 power supply.
|
Original
|
PDF
|
128Mx16-SOP
SD2G16VS4364
2128Mx16,
128Mx4
512Mbit
128Mx16-bit.
3DSD2G16VS4364
3DFP-0364-REV
3DSD2G16VS4364
3D-PLUS
|
MR26V02G54R
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
FEDR26V02G54R-002-01
MR26V02G54R
16-Bit
MR26V02G54R
|
|
|
K9F2G08X0M
Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34
|
Original
|
PDF
|
K9F2G08Q0M
K9F2G16Q0M
K9F2G08U0M
K9F2G16U0M
K9F2G08Q0M
K9F2G08U0M
K9F2G08X0M
K9F2G08U0M-PCB0
K9F2G08Q0M-PCB0
K9F2G16Q0M
K9F2G16U0M
K9F2G08Q0M-Y
K9F2G16U0M-Y
K9F2G16U0M-Y application
|
nand hamming code 2k bytes
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
|
Original
|
PDF
|
K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
9F2G08U0M
nand hamming code 2k bytes
|
Untitled
Abstract: No abstract text available
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001
|
Original
|
PDF
|
K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
|
K9F2G08U0M-YCB0
Abstract: No abstract text available
Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001
|
Original
|
PDF
|
K9F2G08Q0M-YCB0
K9F2G08U0M-YCB0
K9F2G16Q0M-YCB0
K9F2G16U0M-YCB0
|
K9W4G08U1M
Abstract: K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx
Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.
|
Original
|
PDF
|
K9W4G08U1M
K9K2G08Q0M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9W4G08U1M
K9K2G08Q0M
K9K2G08Q0M-PCB0
K9K2G08U0M
K9K2G08U0M-FCB0
K9K2G16Q0M
K9K2G16U0M
K9W4G16U1M
samsung 2GB X16 Nand flash
256Mx
|
MR26V02G54R
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|
70pin ssop
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
FEDR26V02G54N-02-01
MR26V02G54N
70pin ssop
|
Untitled
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
FEDR36V02G54B-002-01
MR36V02G54B
|
512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
|
Original
|
PDF
|
K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
512M x 8 Bit NAND Flash Memory
K9F2G16U0M
K9F2G08U0M-PCB0
samsung toggle mode NAND
Serial NAND
K9K4G08U1M
K9F2G08Q0M-PCB0
|
marking code D23
Abstract: marking code D22
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|