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    TE Connectivity 154N-015V-RT

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    15VRT Datasheets Context Search

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    WEIGHING SCALE 8051

    Abstract: AD1175 weighing scale code using microcontroller 8051 2e21
    Text: ~ ~ HighAccuracy, 22-Bit Integrating AIDConverter ANALOG DEVICES FEATURES High Resolution: 22 Bits Wide Dynamic Range: 133dB Low Nonlinearity: Integral: :t 0.5ppm max Differential: :t 0.5LSB max High Stability: Gain: :!:1ppm/oC max Zero: :to.5J.lVrC max INL: :to.01ppmrC


    Original     		PDF 22-Bit 133dB 01ppmrC OO25ppm/oC SSQ-122-03-G-S AD1l75) 22-PIN WEIGHING SCALE 8051 AD1175 weighing scale code using microcontroller 8051 2e21

    086-56 UNC

    Abstract: pabi CAMH9126
    Text: FEATURES MODEL NO. CAMH9126 L-Band Op. Freq. 52 dB Gain 61.7 dBm Pout 45% Efficiency VSWR, Infinity to1 Withstand AMP A L-Band Power Amplifier A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE.


    Original     		PDF CAMH9126 086-56 UNC pabi CAMH9126

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A

    SPM6G140-060D

    Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
    Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		PDF SPM6G140-060D 500uA, SPM6G140-060D C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977

    SPM6G120-120D

    Abstract: 210C 3 pins Variable resistor 5K ohm
    Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		PDF SPM6G120-120D 500uA, SPM6G120-120D 210C 3 pins Variable resistor 5K ohm

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


    Original     		PDF AN-937 ca3103 2n2222 -331 Cd4093 SiHF

    Untitled

    Abstract: No abstract text available
    Text: MODEL NUMBER CAM H9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 M IN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 M IN DEEP INCLUDING SUPPORT FLANGE. 10.50


    Original     		PDF H9126

    CAMH9126

    Abstract: AA-75 amplifier UNC-2B 086-56 UNC 15VRT RF power amplifier MHz
    Text: MODEL NUMBER CAMH9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE. 10.50 MAX


    Original     		PDF CAMH9126 CAMH9126 AA-75 amplifier UNC-2B 086-56 UNC 15VRT RF power amplifier MHz

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


    Original     		PDF AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent