25NM60N
Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Text: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1
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STx25NM60ND
O-220FP,
O-220,
O-247
STB25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
O-220FP
O-220
25NM60N
25NM60ND
25NM60
stw25nm60nd
stw25
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TXM RX-3
Abstract: TQFP64 9226
Text: STM7E1 7 E1 channels switch array Features • Main switches max. RON less than 2 Ω ■ Provides 7 auxiliary switches with RON < 75 Ω ■ 6 VPP amplitude of analog input signal ■ Digital inputs are TTL levels compatible Applications ■ Telecom infrastructure
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TQFP64
TXM RX-3
TQFP64
9226
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S3036
Abstract: CDF-AEC-Q100-002 L9951 L9951XP
Text: L9951 L9951XP Rear door actuator driver Features Type Outputs 1 Ron(2) IOUT VS L9951 L9951XP OUT1 OUT2 OUT3 OUT4 OUT5 150 mΩ 200 mΩ 200 mΩ 800 mΩ 800 mΩ 7.4 A 5A 5A 1.25 A 1.25 A 28 V PowerSO-36 PowerSSO-36 1. See block diagram. 2. Typical values. Applications
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L9951
L9951XP
PowerSO-36
PowerSSO-36
S3036
CDF-AEC-Q100-002
L9951
L9951XP
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JESD97
Abstract: STRH60N20FSY3 25C312
Text: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH60N20FSY1
STRH60N20FSY3
O-254AA
100kRad
34Mev/cm
JESD97
STRH60N20FSY3
25C312
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STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
STRH40N6SY1
JESD97
STRH40N6SY3
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JESD97
Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Text: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge
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STRH40N25FSY1
STRH40N25FSY3
O-254AA
34Mev/cm
JESD97
RH40N25FSY1
RH40N25FSY3
STRH40N25FSY1
STRH40N25FSY3
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100uF 25V Electrolytic Capacitor
Abstract: ELECTROLYTIC CAPACITOR 100UF 25V LNB power controller with step-up Murata-BL01RN1-A62 D3 1N4001 10uf, 35v electrolytic capacitor
Text: LNBH23 LNBs supply and control IC with step-up and I²C interface Features • Complete interface between LNB and I²C bus ■ Built-in DC/DC converter for single 12 V supply operation and high efficiency Typ. 93% @ 0.75 A , with integrated NMOS ■ Selectable output current limit by external
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LNBH23
100uF 25V Electrolytic Capacitor
ELECTROLYTIC CAPACITOR 100UF 25V
LNB power controller with step-up
Murata-BL01RN1-A62
D3 1N4001
10uf, 35v electrolytic capacitor
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motor driver full bridge 5A
Abstract: No abstract text available
Text: L9951 L9951XP Rear door actuator driver Features Type Outputs 1 Ron(2) IOUT VS L9951 L9951XP OUT1 OUT2 OUT3 OUT4 OUT5 150mΩ 200mΩ 200mΩ 800mΩ 800mΩ 7.4A 5A 5A 1.25A 1.25A 28V PowerSSO-36 PowerSO-36 1. See block diagram. 2. Typical values. Application
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L9951
L9951XP
PowerSO-36
PowerSSO-36
motor driver full bridge 5A
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PSSO-24
Abstract: PSSO24 100uF 25V Electrolytic Capacitor lnbh231 10uf, 35v electrolytic capacitor
Text: LNBH23 LNBs supply and control IC with step-up and I²C interface Features • Complete interface between LNB and I²C bus ■ Built-in DC-DC converter for single 12 V supply operation and high efficiency typ. 93% @ 0.75 A , with integrated NMOS ■ Selectable output current limit by external
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LNBH23
PSSO-24
PSSO24
100uF 25V Electrolytic Capacitor
lnbh231
10uf, 35v electrolytic capacitor
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rfid preamble
Abstract: rfid xrag2 chip antenna rfid UHF 18000-6C UHF rfid antenna UHF RFID READER CRC16 EPCglobal pulse interval encoding
Text: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive operation (no battery required) ■ UHF carrier frequencies from 860 MHz to
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432-bit
18000-6C,
128Kbit/s)
256-bit
64-bit
304-bit
64-bit
rfid preamble
rfid xrag2
chip antenna rfid UHF
18000-6C
UHF rfid antenna
UHF RFID READER
CRC16
EPCglobal
pulse interval encoding
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Untitled
Abstract: No abstract text available
Text: FST-24.4A-8 Product Details - Tyco Electronics Page 1 of 1 Corporate Home | Electronic Components | Segments | Who We Are FST-24.4A-8 Product Details FLEXSTRIP Jumpers Quick Links Always EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability
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FST-24
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SN74AUC1G86DBVR
Abstract: No abstract text available
Text: SN74AUC1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE www.ti.com SCES389J – MARCH 2002 – REVISED NOVEMBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal
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SN74AUC1G86
SCES389J
000-V
A114-A)
A115-A)
SN74AUC1G86DBVR
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Untitled
Abstract: No abstract text available
Text: SN74AUP1G04 LOW-POWER SINGLE INVERTER GATE www.ti.com SCES571F – JUNE 2004 – REVISED NOVEMBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • Low Static-Power Consumption ICC = 0.9 µA Max • Low Dynamic-Power Consumption
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SN74AUP1G04
SCES571F
000-V
A114-B,
A115-A)
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Untitled
Abstract: No abstract text available
Text: STA5620 Fully integrated RF front-end receiver for GPS applications Features • Low IF architecture fIF = 4fO ■ Minimum external components ■ VGA gain internally regulated ■ On chip programmable PLL ■ Typ. 2.7 V supply voltage ■ SPI interface
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STA5620
QFN-32
VFQFPN32
STA5620
VFQFPN32
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25NM60ND
Abstract: STW25NM60ND STB25NM60ND STF25NM60ND STI25NM60ND STP25NM60ND
Text: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ TJMAX Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS on max 650 V ID 3 3 0.16 Ω 1 21 A 21 A 21 A(1) 21 A 21 A
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STx25NM60ND
O-220FP,
O-220,
O-247
STB25NM60ND
STI25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
O-220
25NM60ND
STW25NM60ND
STB25NM60ND
STF25NM60ND
STI25NM60ND
STP25NM60ND
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Untitled
Abstract: No abstract text available
Text: STG3684A Low voltage 0.5 Ω max dual SPDT switch with break-before-make Features • Ultra low power dissipation: ICC = 0.2 µA max. at TA = 85 °C ■ Low ON resistance VIN = 0 V: – RON = 0.50 Ω (max. TA = 25 °C) at VCC = 4.3 V – RON = 0.50 Ω (max. TA = 25 °C)
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STG3684A
DFN10L
QFN10L
STG3684AUTR
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VNH3SP30-E
Abstract: VNH3SP30 VNH3SP30TR-E JESD97
Text: VNH3SP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3SP30-E 45mΩ max (per leg) 30A 40V MultiPowerSO-30 • Output current: 30A ■ 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown
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VNH3SP30-E
MultiPowerSO-30TM
MultiPowerSO30
VNH3SP30-E
VNH3SP30
VNH3SP30TR-E
JESD97
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STW43NM50N
Abstract: 43NM50N
Text: STW43NM50N N-channel 500 V, 0.070 Ω, 37 A MDmesh II Power MOSFET TO-247 Features Type VDSS @ Tjmax RDS on max ID STW43NM50N 550 V < 0.085 Ω 37 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1
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STW43NM50N
O-247
STW43NM50N
43NM50N
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STA5620
Abstract: QFN-32 STA5620TR VFQFPN32
Text: STA5620 Fully integrated RF front-end receiver for GPS applications Features • Low IF architecture fIF = 4fO ■ Minimum external components ■ VGA gain internally regulated ■ On chip programmable PLL ■ Typ. 2.7 V supply voltage ■ SPI interface
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STA5620
QFN-32
VFQFPN32
STA5620
STA5620TR
VFQFPN32
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av339
Abstract: JESD97 STRH10N25ESY3
Text: STRH10N25ESY1 STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH10N25ESY1 250 V STRH10N25ESY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH10N25ESY1
STRH10N25ESY3
O-257AA
34Mev/cm
av339
JESD97
STRH10N25ESY3
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1128 marking
Abstract: JESD97
Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH100N6FSY1
STRH100N6FSY3
O-254AA
34Mev/cm
1128 marking
JESD97
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passive rfid tag circuit diagram
Abstract: CRC16 rfid preamble ufdfpn 18000-6C
Text: XRAG2 432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory Features • EPCglobal class 1 generation 2 RFID UHF specification revision 1.0.9 ■ Passive operation (no battery required) ■ UHF carrier frequencies from 860 MHz to
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432-bit
18000-6C,
128Kbit/s)
256-bit
64-bit
304-bit
64-bit
passive rfid tag circuit diagram
CRC16
rfid preamble
ufdfpn
18000-6C
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25NM60ND
Abstract: f25nm60n 25nm60n P25NM60N F25NM60 STB25NM60ND-STI25NM60ND STW25NM60ND STB25NM60ND JESD97 STF25NM60ND
Text: STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features VDSS @ TJMAX Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS on max 650 V
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STB25NM60ND-STI25NM60ND
STF/P25NM60ND-STW25NM60ND
O-220FP
O-220
O-247
STB25NM60ND
STI25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
25NM60ND
f25nm60n
25nm60n
P25NM60N
F25NM60
STB25NM60ND-STI25NM60ND
STW25NM60ND
STB25NM60ND
JESD97
STF25NM60ND
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - .095 REVISIONS DIST ES ALL RIGHTS RESERVED. 1 OO P LTR DESCRIPTION DATE DWN APVD G6 ADD NEW PART -25 19AUG2013 AY SZ G7 UPDATE -25 MATING SEQUENCE 29AUG2013 AY SZ
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19AUG2013
29AUG2013
30AUG2013
15NOV2007
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