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    15N60 Search Results

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    15N60 Price and Stock

    Infineon Technologies AG IKD15N60RATMA1

    IGBT TRENCH FS 600V 30A TO252-3
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    DigiKey IKD15N60RATMA1 Digi-Reel 18,713 1
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    Mouser Electronics IKD15N60RATMA1 10,392
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    Infineon Technologies AG IKD15N60RFATMA1

    IGBT TRENCH/FS 600V 30A TO252-3
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    DigiKey IKD15N60RFATMA1 Digi-Reel 5,476 1
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    Newark IKD15N60RFATMA1 Cut Tape 15,349 1
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    STMicroelectronics STF15N60M2-EP

    MOSFET N-CH 600V 11A TO220FP
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    DigiKey STF15N60M2-EP Tube 1,554 1
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    STMicroelectronics STF15N60M2-EP 1,968 1
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    STMicroelectronics STFI15N60M2-EP

    MOSFET N-CH 600V 11A I2PAKFP
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    DigiKey STFI15N60M2-EP Tube 1,496 1
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    Infineon Technologies AG IGB15N60TATMA1

    IGBT TRENCH 600V 30A TO263-3
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    DigiKey IGB15N60TATMA1 Cut Tape 1,371 1
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    Mouser Electronics IGB15N60TATMA1 1,362
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    15N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 15N60C5 ISOPLUS220TM E72873

    15N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		PDF 15N60 O-247 15N60 O-220F1 QW-R502-485

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 15N60C5 ISOPLUS220TM E72873

    20N60

    Abstract: 15N60 K 15N60 20n60 to-247
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 15N60 20N60 20N60 O-247 O-204 100ms K 15N60 20n60 to-247

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		PDF 15N60 15N60 O-247 O-220F1 QW-R502-485

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		PDF 15N60 15N60

    20n60

    Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A


    Original     		PDF 15N60 20N60 20n60 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 15N60C5 ISOPLUS220TM E72873 20090209b

    DSA008959

    Abstract: 15N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		PDF 15N60 O-247 15N60 O-220F1 QW-R502-485 DSA008959

    15N60

    Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20


    Original     		PDF 15N60 20N60 15N60 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 15N60C5 ISOPLUS220TM E72873 20090209b GS54

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 15N60C5 ISOPLUS220TM E72873 GS54

    15N60

    Abstract: 15N60C5 E72873 15n60c
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A


    Original     		PDF 15N60 20N60

    15N60CFD

    Abstract: JESD22 SPP15N60CFD D134 15n60c
    Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


    Original     		PDF SPP15N60CFD PG-TO220 15N60CFD 15N60CFD JESD22 SPP15N60CFD D134 15n60c

    15N60CFD

    Abstract: 15N60 JESD22 SPW15N60CFD D134
    Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated


    Original     		PDF SPW15N60CFD PG-TO247 15N60CFD 009-134-A O-247 PG-TO247-3 15N60CFD 15N60 JESD22 SPW15N60CFD D134

    20N60

    Abstract: 15N60 K 15N60 15n60 TO-247 20n60 G
    Text: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 15N60 20N60 O-204 O-247 O-204 O-247 20N60 15N60 K 15N60 15n60 TO-247 20n60 G

    20N60

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 20N60 15N60 O-247 O-204 O-204 O-247 20N60

    Untitled

    Abstract: No abstract text available
    Text: h IXYS v HiPerFET Power MOSFETs " IXFH/15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15


    OCR Scan     		PDF IXFH/IXFM15N60 15N60 20N60 20N60 O-247 O-204

    IXYS CS 2-12

    Abstract: No abstract text available
    Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


    OCR Scan     		PDF 15N60 20N60 O-247 IXYS CS 2-12

    20n60 to-247

    Abstract: 20N60 20N60D 91526E
    Text: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous


    OCR Scan     		PDF 15N60 20N60 Cto150 20N60 O-247 20n60 to-247 20N60D 91526E

    15N60

    Abstract: K 15N60
    Text: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A 15N60


    OCR Scan     		PDF SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60

    15N60

    Abstract: IXTM15N60
    Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs 15N60, 55 15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 15N60 15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r


    OCR Scan     		PDF 4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS