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    15N1 Price and Stock

    Walsin Technology Corporation HH15N100J500CT

    CAP CER 10PF 50V C0G/NP0 0402
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    DigiKey HH15N100J500CT Cut Tape 37,620 1
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    HH15N100J500CT Digi-Reel 37,620 1
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    Walsin Technology Corporation RF15N180F500CT

    CAP CER 18PF 50V C0G/NP0 0402
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    Walsin Technology Corporation HH15N101J500CT

    CAP CER 100PF 50V C0G/NP0 0402
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    Walsin Technology Corporation RF15N100J500CT

    CAP CER 10PF 50V C0G/NP0 0402
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    DigiKey RF15N100J500CT Digi-Reel 18,165 1
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    Novacap ES2215N102K502NTM

    CAP CER 1000PF 250V C0G 2215
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    DigiKey ES2215N102K502NTM Digi-Reel 5,103 1
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    ES2215N102K502NTM Cut Tape 5,103 1
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    ES2215N102K502NTM Reel 3,500 500
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    15N1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    15N12 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N12 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N120C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N15 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    15N15 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    15N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 15N120C O-247 O-268

    15N12

    Abstract: 575 C2
    Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES


    Original     		PDF 15N120B O-220AB O-263 15N12 575 C2

    Untitled

    Abstract: No abstract text available
    Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120B O-247

    IC IGBT 15N120

    Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
    Text: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector


    Original     		PDF 15N120 O-220 O-263 O-220 IC IGBT 15N120 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000


    Original     		PDF 15N100C O-220AB O-263

    15N120

    Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
    Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


    Original     		PDF 15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS

    15N120BD1

    Abstract: 15N120 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1

    IXSH15N120B

    Abstract: No abstract text available
    Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200


    Original     		PDF 15N120B O-247 O-268 O-247) 13/1or IXSH15N120B

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


    Original     		PDF 15N120C O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120C O-220AB O-263 O-220

    15N120

    Abstract: No abstract text available
    Text: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120

    15N100C

    Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint
    Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


    Original     		PDF 15N100C O-220AB O-263 728B1 15N100C 15n10 TO-263AA IXGp 15N100C TO-220 footprint

    15n10

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 15N100Q 15N100Q O-247 O-268 O-268AA 15n10

    IC IGBT 15N120

    Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
    Text: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions


    Original     		PDF 15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT

    15N120BD1

    Abstract: 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V


    Original     		PDF 15N120B 15N120B O-220 O-263

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM


    Original     		PDF 15N100C O-220AB O-263 728B1

    15n120

    Abstract: No abstract text available
    Text: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original     		PDF 15N120 O-263AB 20110120b 15n120

    15N15

    Abstract: rfm15n15 diode RA 225 R
    Text: R FM 15N 12/15N 15 R 15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d


    OCR Scan     		PDF 12/15N FP15N12/15N15 -204A FP15N12 RFP15N15 92CS-J4B52R1 92CS-36I45 15N15 rfm15n15 diode RA 225 R

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms


    OCR Scan     		PDF 15N120AU1 O-247 -100/ps;

    RGE 17-18

    Abstract: TO220-4 weight
    Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i


    OCR Scan     		PDF 15N120C O-220 O-263 RGE 17-18 TO220-4 weight

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM


    OCR Scan     		PDF 15N120C

    001-045

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20


    OCR Scan     		PDF 15N120B 15N120B O-268 001-045

    RGE 17-18

    Abstract: 10i2 TRI 1461
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V


    OCR Scan     		PDF 15N120B 15N120B T0-220 O-263 RGE 17-18 10i2 TRI 1461