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    M25P16 VDFPN8

    Abstract: M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995
    Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features n 16 Mbit of Flash memory n Page Program up to 256 bytes in 0.64 ms (typical) n Sector Erase (512 Kbit) in 0.6 s (typical) n Bulk Erase (16 Mbit) in 13 s (typical) n 2.7 V to 3.6 V single supply voltage


    Original     		PDF M25P16 2015h) M25P16 VDFPN8 M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995

    Untitled

    Abstract: No abstract text available
    Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum


    Original     		PDF M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year

    M25P16 VDFPN8

    Abstract: MARKING code mf stmicroelectronics VDFPN 8x6 M25P16-V vdfpn8 VDFPN8 package SO8N M25P16 MARKING CODE A21 SO8
    Text: M25P16 16 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 17 s (typical)


    Original     		PDF M25P16 2015h) M25P16 VDFPN8 MARKING code mf stmicroelectronics VDFPN 8x6 M25P16-V vdfpn8 VDFPN8 package SO8N M25P16 MARKING CODE A21 SO8

    VDFPN8

    Abstract: No abstract text available
    Text: M25P16 16 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 16Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (512 Kbit) ■ Bulk Erase (16Mbit) ■ 2.7 to 3.6V Single Supply Voltage


    Original     		PDF M25P16 50MHz 16Mbit 16Mbit) 2015h) VDFPN8

    VDFPN8 package

    Abstract: No abstract text available
    Text: M25P32 32-Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode


    Original     		PDF M25P32 32-Mbit, 2016h) VDFPN8 package

    A3 SOT223

    Abstract: i-pak Package zener diode
    Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z O-92/IPAK/SOT-223 A3 SOT223 i-pak Package zener diode

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage


    Original     		PDF M25P32 50MHz 32Mbit 512Kbit) 32Mbit) 2016h)

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    VDFPN8 package

    Abstract: M25P32 SO8w
    Text: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode


    Original     		PDF M25P32 32-Mbit, 2016h) VDFPN8 package M25P32 SO8w

    MLP8 package

    Abstract: MLP8 m25p64 PACKAGE MARKING so16-300 MLP8 m25p64 PACKAGE MLP8 m25p64
    Text: M25P64 64 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Features „ 64 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ Page Program (up to 256 Bytes)


    Original     		PDF M25P64 2017h) 20-year MLP8 package MLP8 m25p64 PACKAGE MARKING so16-300 MLP8 m25p64 PACKAGE MLP8 m25p64

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    vdfpn8

    Abstract: VFQFPN8 M25P16 VDFPN8 M25P16 VDFPN SO16-300
    Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage


    Original     		PDF M25P16 2015h) vdfpn8 VFQFPN8 M25P16 VDFPN8 M25P16 VDFPN SO16-300

    24SER

    Abstract: No abstract text available
    Text: M25P16 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit)


    Original     		PDF M25P16 16Mbit 16Mbit) 50MHz 2015h) 24SER

    i-pak Package zener diode

    Abstract: STN1NK60Z stn1nk60
    Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z O-92/IPAK/SOT-223 i-pak Package zener diode STN1NK60Z stn1nk60

    Untitled

    Abstract: No abstract text available
    Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage


    Original     		PDF M25P16 2015h)

    MLP8 m25p64

    Abstract: vdfpn8 wip 74 VDFPN 8x6 MLP8 m25p64 PACKAGE M25P64 ST10
    Text: M25P64 64Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (64Mbit)


    Original     		PDF M25P64 64Mbit, 64Mbit 512Kbit) 64Mbit) 50MHz 2017h) 20-Year MLP8 m25p64 vdfpn8 wip 74 VDFPN 8x6 MLP8 m25p64 PACKAGE M25P64 ST10

    1NK60Z

    Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
    Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z OT-223 STQ1NK60ZR 1NK60Z STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode

    1Nk60

    Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
    Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z O-251 OT-223 STQ1NK60ZR-AP 1Nk60 1NK60Z 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z

    MLP8

    Abstract: M25P16 M25P16 VDFPN8
    Text: Numonyx Forté Serial Flash Memory M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features „ 16 Mbit of Flash memory „ Page Program up to 256 bytes in 0.64 ms (typical) VFDFPN8 (MP) 6 x 5 mm (MLP8) „ Sector Erase (512 Kbit) in 0.6 s (typical)


    Original     		PDF M25P16 2015h) MLP8 M25P16 M25P16 VDFPN8

    A11-A21

    Abstract: A0-A21 M29DW640D M29DW640DB 3A800
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63 A11-A21 A0-A21 M29DW640D M29DW640DB 3A800

    VDFPN 8x6

    Abstract: 8x6mm M25P32 ST10 mlp 8x6
    Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)


    Original     		PDF M25P32 50MHz 32Mbit 512Kbit) 32Mbit) 2016h) VDFPN 8x6 8x6mm M25P32 ST10 mlp 8x6

    MIL-T-10727

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST FT R E V IS IO N S LTR F1 1.65 [.065] WHEN TINES ARE COMPRESSED TO 0 .25[.010] FROM BODY DESCRIPTION REV PER ECO—05—13552 DATE


    OCR Scan     		PDF MIN50 15MAY2003 16MAY03 31MAR2000 MIL-T-10727