UT-85-M17
Abstract: J103 transistor 3 pin kemet c chip
Text: MOTOROLA Order this document by MRF897/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897/D
MRF897
MRF897
MRF897/D
MRF897/D*
UT-85-M17
J103 transistor 3 pin
kemet c chip
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MRF2628
Abstract: MOTOROLA TRANSISTOR 726 transistor j246 J476 vk200 rf choke
Text: MOTOROLA Order this document by MRF2628/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF2628 . . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and industrial FM equipment. • Compact .280 Stud Package
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MRF2628/D
MRF2628
MRF2628
MRF2628/D*
MRF2628/D
MOTOROLA TRANSISTOR 726
transistor j246
J476
vk200 rf choke
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Epsilam-10
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of
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MRF898/D
MRF898
MRF898
MRF898/D
Epsilam-10
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j35 fet
Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF5015/D
MRF5015
MRF5015/D*
MRF5015/D
j35 fet
Nippon capacitors
MRF5015 equivalent
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BD136
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
MRF15090
DEVICEMRF15090/D
BD136
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motorola j117
Abstract: j117 motorola transistor J128 transistor j117 C7L3 mrf492
Text: MOTOROLA Order this document by MRF492/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF492 Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment.
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MRF492/D
MRF492
MRF492
MRF492/D
MRF492/D*
motorola j117
j117 motorola
transistor J128
transistor j117
C7L3
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NT 407 F power transistor
Abstract: DL110
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
MRF6409/D
NT 407 F power transistor
DL110
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF899/D
MRF899
MRF899
MRF899/D
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TL12
Abstract: 2052-1618 mrf650
Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF650/D
MRF650
MRF650
TL12
2052-1618
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MRF247
Abstract: MOTOROLA 381 equivalent vk 200 amplifier mrf247
Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF247/D
MRF247
MRF247
MRF247/D
MOTOROLA 381 equivalent
vk 200
amplifier mrf247
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TRANSISTOR motorola 838
Abstract: j525 transistor
Text: MOTOROLA Order this document by MRF847/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF847 . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of
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MRF847/D
MRF847
MRF847
MRF847/D
MRF847/D*
TRANSISTOR motorola 838
j525 transistor
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TRANSISTOR A331
Abstract: 395C-01
Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
TRANSISTOR A331
395C-01
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DO-204AC
Abstract: GPP20A GPP20M
Text: GPP20A thru GPP20M Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. • Plastic package has Underwriters Laboratory
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GPP20A
GPP20M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
MIL-STD-750,
15-Mar-02
DO-204AC
GPP20M
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DF15005S
Abstract: DF1506S DF1501S DF1502S DF1504S DF1510S
Text: DF15005S thru DF1510S Vishay Semiconductors New Product formerly General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A Case Style DFS 0.205 5.2 0.195 (5.0) 0.047 (1.20)
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DF15005S
DF1510S
50mVp-p
15-Mar-02
DF1506S
DF1501S
DF1502S
DF1504S
DF1510S
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BYW36
Abstract: BYW32 BYW36 v BYW32 3 BYW35 DO204AP DO-204AP BYW33 BYW34
Text: BYW32 thru BYW36 Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Fast Switching Rectifier DO204AP Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction
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BYW32
BYW36
DO204AP
MIL-S-19500
BYW36
50mVp-p
15-Mar-02
BYW36 v
BYW32 3
BYW35
DO204AP
DO-204AP
BYW33
BYW34
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Untitled
Abstract: No abstract text available
Text: INDUCTORS Model ILS-3825 and ILS-2515 Ultra-Low-Profile Surface-Mount Power Inductor Only 1.19 mm Maximum Height Self-Shielded Chip Inductor for DC/DC Power Applications FEATURES • Inductance Values: 4.7 µH and 10 µH other values available upon request
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ILS-3825
ILS-2515
ILS-3825:
ILS-2515:
ILS-2515
www3825-
ILS-3825-
ILS-2512
13-Nov-00.
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DGP30
Abstract: CGP30
Text: CGP30 and DGP30 Vishay Semiconductors New Product formerly General Semiconductor Clamper/Damper Glass Passivated Rectifier DO-201AD Reverse Voltage 1400 to 1500V Forward Current 3.0A Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications
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CGP30
DGP30
DO-201AD
MIL-S-19500
50mVp-p
15-Mar-02
DGP30
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Untitled
Abstract: No abstract text available
Text: GPP20A thru GPP20M Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. • Plastic package has Underwriters Laboratory
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GPP20A
GPP20M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
MIL-STD-750,
15-Mar-02
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Untitled
Abstract: No abstract text available
Text: IHLP-5050CE-03 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • • • Low profile. High current. Low loss up to 5MHz. Low DCR. Self shielded. Less than 10% L drop at full rated current. Patents received in US, Canada, S. Korea, France,
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IHLP-5050CE-03
MIL-STD-202,
FreL-STD-202,
15-Mar-02
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Untitled
Abstract: No abstract text available
Text: IHLP-2525CZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • • • Low profile. High current. Low loss up to 5 MHz. Low DCR. Self shielded. Less than 10% L drop at full rated current. Patents received in US, Canada, S. Korea, France,
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IHLP-2525CZ-01
MIL-STD-202,
IHLP-2525CZ-01
15-Mar-02
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Untitled
Abstract: No abstract text available
Text: 3.50±0.20 [.138±0.008] STANDOFF ABSTAND 20.57 [.810] 13.30 [.524] 13.20 [.520] 10.54 [.415] 10.16±0.13 [.400±0.005] RECOMMENDED PCB LAYOUT - COMPONENT SIDE VIEW EMPFOHLENER FUER LEITERPLATTE - BESTUCKUNGSSEITE TOL ±0.05 [.002] UNLESS NOTED RECOMMENDED PANEL
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E145613
15MAR02
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sps 1951 transistor
Abstract: mrf857s MOTOROLA ELECTROLYTIC CAPACITOR transistor motorola 359 mrf857
Text: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA MRF857S Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. CLASS A
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MRF857/D
MRF857S
sps 1951 transistor
mrf857s
MOTOROLA ELECTROLYTIC CAPACITOR
transistor motorola 359
mrf857
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SF0035BA01000T
Abstract: No abstract text available
Text: 35.3 MHz Filter For VSB system L- IF applications Part Number SF0035BA01000T Micro Networks Corp., 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 2.5 MHz/div Vertical from top : Magnitude
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SF0035BA01000T
15-Mar-02
SF0035BA01000T
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MRF1946
Abstract: MRF1946A MOTOROLA 381 equivalent MRF1946 equivalent J-101-15
Text: MOTOROLA Order this document by MRF1946/D SEMICONDUCTOR TECHNICAL DATA MRF1946 MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance
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MRF1946/D
MRF1946
MRF1946A
MRF1946A
MRF1946/D*
MRF1946/D
MOTOROLA 381 equivalent
MRF1946 equivalent
J-101-15
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