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    Infineon Technologies AG PALCE22V10-15KMB

    - Bulk (Alt: PALCE22V10-15KMB)
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    Infineon Technologies AG PALC22V10D-15KMB

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    Teledyne e2v QP7C199L-15KMB

    STATIC RAM, 32K X 8, LOW-POWER, 15 NS AC - Rail/Tube (Alt: QP7C199L-15KMB)
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    Avnet Americas QP7C199L-15KMB Tube 250
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    Teledyne e2v PALC22V10B-15KMB

    PROG. LOGIC DEVICE, 22-INPUT 10-OUTPUT, - Rail/Tube (Alt: PALC22V10B-15KMB)
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    Teledyne e2v QP7C199-15KMB

    STATIC RAM, 32K X 8, 15 NS ACCESS TIME - Rail/Tube (Alt: QP7C199-15KMB)
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    atmel part "marking"

    Abstract: Atmel MARKING CODE FT27C1024-15KMB-AT 44JLCC
    Text: SCD#QM5305 Source Control Drawing Upscreening/Manufacturing Specification P/N FT27C1024-15KMB-AT Title Page . List of Effective Pages .


    Original     		PDF QM5305 FT27C1024-15KMB-AT atmel part "marking" Atmel MARKING CODE FT27C1024-15KMB-AT 44JLCC

    Untitled

    Abstract: No abstract text available
    Text:  7& 3DUDOOHO 3520. .[  )HDWXUHV ‡ )DVW5HDG$FFHVV7LPHQV ‡ )DVW%\WH:ULWHPV ‡ 6HOI7LPHG%\WH:ULWH&\FOH ‡ ‡ ‡ ‡ ‡ ‡ ‡ ±,QWHUQDO$GGUHVVDQG'DWD/DWFKHV ±,QWHUQDO&RQWURO7LPHU ±$XWRPDWLF&OHDU%HIRUH:ULWH 'LUHFW0LFURSURFHVVRU&RQWURO


    Original     		PDF FT28C16-15 FT28C16-20 FT28C16-25 FT28C16 -15DC -15JC -15PC

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    TP 152N

    Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
    Text: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)


    OCR Scan     		PDF QQQta31R CY7C123 300-mil CY7C123 as256words CY7C123-12LC CY7C123â 12DMB 12LMB TP 152N CI23 k7315 2A mosfet igbt driver stage

    K73 Package

    Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
    Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when


    OCR Scan     		PDF CY7C164A CY7C166A 384x4 CY7C166A 35DMB CY7C166Aâ 35KMB CY7C166A-35LMB K73 Package 3 phase inverter schematic diagram 7C166 CI64A CY7C164A-45DMB

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    12L10

    Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
    Text: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­


    OCR Scan     		PDF PLD20G10C 24-Pin 10SMHZ 20L10, 12L10 PLD20G10C- 10KMB 10LMB 16L6 20L10 20L8 PLD20G10C 12DC

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


    OCR Scan     		PDF PALC22V10D 100-MHz 83-MHz PALC22V10D 15DMB PALC22V10D- PALC22V10Dâ 15KMB PALC22V10D-15LMB 22V10D PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D-10JC

    Untitled

    Abstract: No abstract text available
    Text: CY7C408A CY7C409A " s CYPRESS SEMICONDUCTOR Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-MHz shift in and shift out rates • Almost Full/Almost Empty and Half Full flags • Dual-port RAM architecture • Fast (50-ns) bubble-through


    OCR Scan     		PDF CY7C408A CY7C409A 35-MHz 50-ns) CY7C408A) 300-mil, 28-pin

    Untitled

    Abstract: No abstract text available
    Text: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22VP10C) 28-Pin PAL22VP10CM 28-Square PAL22VP10CM 15KMB 12YMB

    Untitled

    Abstract: No abstract text available
    Text: 7 PLD20G10C C YPRESS • Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — tpo = 7.5 ns


    OCR Scan     		PDF PLD20G10C 24-Pin 24-Lead 300-MU) 28-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine


    OCR Scan     		PDF 133-MHz 110-MHz 15-ns 25-ns 28-Square 24-Lead PALC22V10Dâ PALC22V10D 24-Lead 300-Mil)

    CY7C199-20DC

    Abstract: No abstract text available
    Text: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power


    OCR Scan     		PDF CY7C198 CY7C199 GY7C198 CY7C199-20DC

    PLDC18G8

    Abstract: T1216 416rp Cypress 12h6 16v8 programming 15WC
    Text: PLDC18G8 CYPRESS SEMICONDUCTOR CMOS Generic 20-Pin Programmable Logic Device • Generic architecture to replace >tandard logic functions including; 10H8, 1 2 H 6 ,1 4 H 4 ,1 6 H 2 ,1 0 L 8 ,1 2 U , 14L4, 1 6 L 2 ,1 0 P 8 ,1 2 P 6,14P 4,1«P 2,16H 8, 16L 8,16P 8,16R 8,16R 6,16R 4,16R P 8,


    OCR Scan     		PDF PLDC18G8 20-Pin --15WC 8--15WI 8--15KMB 15QMB 15WMB 8--20WI 8--20D 8--20KMB PLDC18G8 T1216 416rp Cypress 12h6 16v8 programming 15WC

    Untitled

    Abstract: No abstract text available
    Text: PLD20G10C ¡5 r CYPRESS SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control U sing B iC M O S process and Ti-W fuses,


    OCR Scan     		PDF PLD20G10C 24-Pin 300-M 24-Lead 300-Mil) 24-Lead 28-Square

    Untitled

    Abstract: No abstract text available
    Text: PALC22V10B CYPRESS SEMICONDUCTOR • Advanced second generation PAL ar­ chitecture • Low power — 90 mA max. standard — 100 mA max. military Functional Description — “15” and “20” military 10/15 ns tc o 10/17 ns ts 15/20 ns tpo 50/31 MHz Up to 22 input terms and 10 outputs


    OCR Scan     		PDF PALC22V10B 24-Lead 300-M 28-Pin 28-Square

    12L10

    Abstract: 16L6 18L4 20L10 20L8
    Text: PLD20G10C i f CYPR ESS Features • 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — Pin or product term output enable control • Ultra high speed supports today’s and tomorrow’s fastest microprocessors


    OCR Scan     		PDF PLD20G10C 24-Pin 20L10, 12L10 PLD20G10C-12DMB 24-Lead 300-Mil) PLD20G10C 12KMB 24-Lead 16L6 18L4 20L10 20L8

    CY7C185A

    Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
    Text: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW


    OCR Scan     		PDF CY7C185A CY7C186A 20Q1V CY7C186A CY7C186Aâ 45DMB CY7C186A-45LMB CY7C186 CY7C186A-55LMB 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25

    L22V10C-10PC

    Abstract: No abstract text available
    Text: PAL22V10C PAL22VP10C y CYPRESS Universal PAL Device B iC M O S process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the fam iliarsum -of-products A N D -O R logic structure and a new concept, the program ­ m able m acrocell. • 10 user-programmable output


    OCR Scan     		PDF PAL22VP10C) PAL22V10C PAL22VP10C PAL22VP10C 300-M 28-Square 28-Pin 24-Lead L22V10C-10PC

    Untitled

    Abstract: No abstract text available
    Text: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­


    OCR Scan     		PDF CY7C164A CY7C166A CY7C164A CY7C166A 7C166A) CY7C164Aâ 35LMB CY7C166Aâ 20LMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power


    OCR Scan     		PDF CY7C191 CY7C192 7C191) CY7C192â 35KMB 35LMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C123 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial )


    OCR Scan     		PDF CY7C123 300-mil 15LMB 7C123- 15KMB

    CY7C408A-35DC

    Abstract: CY7C408A-25KMB inverter 2001v C403A-2 CY7C408A CY7C409A CY7C409A-25DC CY7C409A-25KMB CY7C409A25DC
    Text: bSE D CYPRESS SEMICONDUCTOR 25ê^bb2 GGlObl? 510 • CYP CY7C408A CY7C409A P Y P P ïïQ C ’ Cascadable 64 x 8 FIFO Cascadable 64 x 9 FIFO SEMICONDUCTOR Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-MIIz shift in and shift out rates


    OCR Scan     		PDF CY7C408A CY7C409A 35-MHz 50-ns) CY7C408A) 300-mil, 28-pin 64-word CY7C408A-35DC CY7C408A-25KMB inverter 2001v C403A-2 CY7C409A-25DC CY7C409A-25KMB CY7C409A25DC

    Untitled

    Abstract: No abstract text available
    Text: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)


    OCR Scan     		PDF PALC22V10D 133-MHz 110-MHz 15-ns PALC22V10Bâ 25-ns PALC22V10-25