TFM 5360
Abstract: tfm 5380 tfm 5560 Temic TFM 5360 TFM 5300 ir TFM 5400 tfm 5330 TFM 5300 tfms 5360 infrared temic TFMS 5380
Text: TFMS 5.0 Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TFMS 5300 TFMS 5360 TFMS 5380 TFMS 5560 f0 30 kHz 36 kHz 38 kHz 56 kHz Type TFMS 5330 TFMS 5370 TFMS 5400 f0 33 kHz 36.7 kHz 40 kHz Description The TFMS 5.0 – series are miniaturized receivers for infrared remote control systems. PIN diode and
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D-74025
15-Jul-96
TFM 5360
tfm 5380
tfm 5560
Temic TFM 5360
TFM 5300 ir
TFM 5400
tfm 5330
TFM 5300
tfms 5360
infrared temic TFMS 5380
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LP 8029
Abstract: TEMT3700 TSMS3700
Text: TSMS3700 GaAs Infrared Emitting Diode in SMT Package Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL–CC–2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical
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TSMS3700
TSMS3700
TEMT3700
D-74025
15-Jul-96
LP 8029
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tsts 7503
Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
Text: TSTS750. GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.
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TSTS750.
D-74025
15-Jul-96
tsts 7503
TSTS750
TSTS7500
TSTS7501
TSTS7502
TSTS7503
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TEST2600
Abstract: TSSS2600 tp100 sensor
Text: TSSS2600 GaAs IR Emitting Diode in Side View Miniature Package Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens. The device is spectrally matched to silicon photodiodes
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TSSS2600
TSSS2600
D-74025
15-Jul-96
TEST2600
tp100 sensor
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TSTA7500
Abstract: No abstract text available
Text: TSTA7500 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it ideal for use with external optics.
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TSTA7500
TSTA7500
10the
D-74025
15-Jul-96
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BPV10NF
Abstract: 8436 TSSF4500
Text: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.
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BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
15-Jul-96
8436
TSSF4500
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BPV22NF
Abstract: No abstract text available
Text: BPV22NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR
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BPV22NF
BPV22NF
D-74025
15-Jul-96
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phototransistor S351P
Abstract: 8239 8582
Text: S351P Silicon NPN Phototransistor Description S351P is a very high sensitive silicon NPN epitaxial planar phototransistor in a low profile ø 5mm T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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S351P
S351P
D-74025
15-Jul-96
phototransistor S351P
8239
8582
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Untitled
Abstract: No abstract text available
Text: r ” 1 1 I 2 RECOMMENDED HOLE PATTERN POS 1 POS 2 NOTE 2 ROW B .200 5 . 08 MAX ROW A 1 , 02 TYP PO S 2 1 NDTE 2 T O L , NDN-ACCUM , A A NDTE 3— •NOTE 5 / X ./ \ nr NO TE 6 v7 mot'l. code NOTE 1 tolerances unless otherwise specified 1/23/8S linear S.LOW 15JUL96
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1/23/8S
15JUL96
15JUL96
1SJUL96
15JUL
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TSTS710
Abstract: No abstract text available
Text: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack age. Their glass lenses provide a very high radiant
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TSTS710.
D-74025
15-Jul-96
TSTS710
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telefunken ha 880
Abstract: No abstract text available
Text: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.
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TSHA620
TSHA620.
TSHA520.
I5-JuI-96
15-JuI-96
telefunken ha 880
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LT 5203
Abstract: a5201
Text: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.
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TSHA520.
l5-Jul-96
LT 5203
a5201
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Untitled
Abstract: No abstract text available
Text: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR
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BPV22NF
l5-Jul-96
15-Jul-96
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K423
Abstract: CI 8426
Text: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR
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BPV23NF
15-Jul-96
K423
CI 8426
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Untitled
Abstract: No abstract text available
Text: Temic BPW34 S e m i c o n d u c t o r s Silicon PIN Photodiode Description T h e B P W 3 4 is a h ig h s p e e d a n d h ig h se n s itiv e P IN p h o to d io d e in a m in ia tu re fla t p la stic p a ck a g e . Its lo p v iew c o n stru c tio n m a k e s it id eal a s a lo w c o st re p la c e m e n t o f
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BPW34
15-Jul-96
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TSTA7100
Abstract: No abstract text available
Text: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant
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TSTA7100
TSTA7100
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant
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TSTA7100
15-Jul-96
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BPW20R
Abstract: No abstract text available
Text: BPW20R Temic S e m i c o n d u c t o r s Silicon PN Photodiode Description B P W 2 0 R is a p la n a r S ilico n P N p h o to d io d e in a h e rm e ti c ally se a le d s h o rt T O - 5 c ase , e sp e c ia lly d e sig n e d fo r h ig h p re c isio n lin e a r a p p lic atio n s.
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BPW20R
15-Jul-96
BPW20R
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8021C
Abstract: No abstract text available
Text: Tem ic TSTS730. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description The TSTS730. series are infrared emitting diodes in stan dard GaAs technology in a hermetically sealed T O -18 package. Their glass lenses provide a high radiant inten
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TSTS730.
D-74025
15-Jul-96
8021C
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8002E
Abstract: No abstract text available
Text: Tem ic TSHA520 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-1% Package Description The TSHA520. series are high efficiency infrared emit ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package,
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TSHA520
TSHA520.
15-JuI-96
15-Jul-96
8002E
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ss 7941
Abstract: TSHA4400
Text: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.
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TSHA440.
TSHA44.
D-74025
15-Jul-96
ss 7941
TSHA4400
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s744
Abstract: No abstract text available
Text: Tem ic CQX19 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode with Metal Socket Description CQ X 19 is a high pow er G aA s infrared em itting diode in a special case, consisting o f a solid metal T O -5 header with a m olded clear plastic lens. This allow s the user to m ount the device on a heatsink and
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CQX19
15-Jul-%
l5-Jul-96
s744
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Untitled
Abstract: No abstract text available
Text: Temic TEMT2200 Se m i c o n d u cfors Silicon NPN Phototransistor Description T E M T 2200 is a high speed silicon N P N epitaxial planar phototransistor in m iniature S O T -23 package for surface m ounting on printed boards. D ue to its w aterclear epoxy
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TEMT2200
15-Jul-96
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TEMT2100
Abstract: alf w sot-23
Text: Temic TEMT2100 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description TEMT2100 is a high speed silicon NPN epitaxial planar phototransistor in miniature SOT-23 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to visible and near infrared radi
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TEMT2100
TEMT2100
OT-23
15-Jul-96
alf w sot-23
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