Untitled
Abstract: No abstract text available
Text: WHITE /M ICRO ELECTRO NICS 512Kx32 5V FLASH MODULE WF512K32-XXX5 PRELIMINARY* FEATURES Also supports full chip erase • Access Times of 90,120 and 150nS ■ Organized as 512Kx32 ■ Packaging ■ Commercial, Industrial and Military Temperature Ranges • 66-pin, PGA Type, 1.185 inch square. Hermetic Ceramic
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512Kx32
WF512K32-XXX5
150nS
512Kx32
66-pin,
1024K
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Untitled
Abstract: No abstract text available
Text: BO WMAR / U H I T E TEC HN OL OG Y t a D e | lSt3t18 0DD DDD7 1 J n * C u sto m B e v ic e s , Êmc M l. a mO T v 11 A P P L IC A T IO N S A SM A LO O SW 1T FO R A/D AN D D/A C O N V ER SIO N , SAM PLE AN D HOLD CIRCU ITS, AN D M U LTIP LEX IN G A PPLIC A TIO N S
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lSt3t18
15b3bTfl
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Untitled
Abstract: No abstract text available
Text: BOUHAR/lilHITE T E C H N O L O G Y SOE D • lSt,3kTfl DQOOSEti MID ■ TTWhite Technology, Inc. MEMORY PRODUCTS 0 '/ 0 i5 I/O24 O O '/O s O 1/O 14 I/O25 O IS O csz O l» io O gnd O '/O ta I/O26 O WE4 O A i3 O 1/O 11 O 1/O 12 AeO O A i4 O aio O ö i A?0 O A i5
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I/O24
I/O25
I/O26
I/O29
S-128K320
18053J
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Untitled
Abstract: No abstract text available
Text: T T WHITE M IC R O E LE C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A ieC A 16 C A 15 Ü A 12 C A7 C A6 C A5 Ü A4 C A3 C A2 C 1 2 3 4
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
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Untitled
Abstract: No abstract text available
Text: WS128K8-XCX I/I/HITE /MICROELECTRONICS 128 Kx8 SRAM MODULE FEATU RES FIG. 1 • A c c e s s Tim es 55 to 120nS PIN CONFIGURATION TOP VIEW E1 A16 E 2 A 14 E 3 NC ^ ■ JE D E C Stan da rd 32 pin, H erm etic C eram ic DIP Package 302 30 D ■ M ilit a r y T em peratu re Range (-55°C to +125°C)
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WS128K8-XCX
120nS
MIL-STD-883
01HXX
100nS
02HXX
03HXX
04HXX
05HXX
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csi4
Abstract: No abstract text available
Text: C3 WS512K32B-XXXE I/VHITE /M IC R O E L E C T R O N IC S 512 K x3 2 S R A M M 0 D U LE preliminary* FEATURES • Access Times of 15,17, 20, 25ns ■ TTL Compatible Inputs and Outputs ■ Low Power BiCMOS ■ 5 Volt Power Supply ■ Packaging ■ Built-in Decoupling Caps and Multiple Ground Pins for Low
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WS512K32B-XXXE
512Kx32,
csi4
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Untitled
Abstract: No abstract text available
Text: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available
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Untitled
Abstract: No abstract text available
Text: BOÜIMAR/UHITE TECHNOLOGY 5SE D ISbBbTÔ 0000404 ► *»-. . v i € W W h ite 4-MEGABIT SRAM MEMORY A MODEL M4194 Kbit -, ,V '; X •. \ / T echn ologyf ln c. _ A w^Q^pwnedàub^liii^oT^ow^rJnstwmép^porporiiti^ Advance Information • \ s -•;■ '
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M4194
4194Kb
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Untitled
Abstract: No abstract text available
Text: WS128K32V-XXX l/VHITE /MICROELECTRONICS m 128Kx32 3.3V SRAM MODULE PRELIMINARY* FEATURES • A c c e s s Tim es of 15 " , 17, 20, 25, 35 n s ■ Com m ercial, Industrial and M ilita ry Tem perature R a n ge s ■ M IL -S T D -8 8 3 Com pliant D e vice s A va ilab le
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WS128K32V-XXX
128Kx32
66-pin,
128KX32
256Kx16
512Kx8
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