ceb65
Abstract: 15d60
Text: CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP655N 150V 0.153Ω 15A 10V CEB655N 150V 0.153Ω 15A 10V CEI655N 150V 0.153Ω 15A CEF655N 150V 0.153Ω 15A 10V d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP655N/CEB655N
CEI655N/CEF655N
CEP655N
CEB655N
CEI655N
CEF655N
O-220
O-263
O-262
O-220F
ceb65
15d60
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FSF9250R4
Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,
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JANSR2N7404
FSF9250R4
-200V,
R2N74
FSF9250R4
1E14
2E12
JANSR2N7404
Rad Hard in Fairchild for MOSFET
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D15P05
Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Text: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using
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RFD15
P05SM,
RFP15
RFD15P05,
RFD15P05SM,
RFP15P05
1e-30
15e-4
47e-3
D15P05
RFP15P05
RFD15P05
RFD15P05SM
TB334
d15p0
rfd15
D15p05 harris
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Untitled
Abstract: No abstract text available
Text: ISL9R1560G2_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R1560G2
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Untitled
Abstract: No abstract text available
Text: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R1560G2
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2SC6141
Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
Text: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.
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2SA2221/2SC6141
ENA1288
AF100W
AF100W
2SA2221
A1288-4/4
2SC6141
a1288
2SA222
2SA2221
2SC614
2SA22
A1288-1
230v to 5v dc circuit diagrams
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Untitled
Abstract: No abstract text available
Text: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,
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RURP1560
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Untitled
Abstract: No abstract text available
Text: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,
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RURP1560
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Untitled
Abstract: No abstract text available
Text: RHRG1560CC_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560CC_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG1560CC
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Untitled
Abstract: No abstract text available
Text: RHRG1560_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG1560
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Untitled
Abstract: No abstract text available
Text: SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features • Low gate charge Field Sotp Technology Low saturation voltage: VCE sat = 1.8V (@ IC = 15A, TC = 25C) RoHS compliant product Applications
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SGTN15C120HW
O-247
N15C120H
28-NOV-13
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AN7254
Abstract: AN7260 RFP15N05L RFP15N06L TB334
Text: RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs Features • 15A, 50V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N05L
TA0522.
AN7254
AN7260
RFP15N05L
RFP15N06L
TB334
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Power Transistor 2N3771
Abstract: 2N3771 2N3771 power transistor 2N3771 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and
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2N3771
50kHz
Power Transistor 2N3771
2N3771
2N3771 power transistor
2N3771 inchange
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AN7254
Abstract: AN7260 RFP15N08L TB334 Logic Level N-Channel Power MOSFET
Text: RFP15N08L Data Sheet January 2002 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications
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RFP15N08L
RFP15N08L
TA09804.
AN7254
AN7260
TB334
Logic Level N-Channel Power MOSFET
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BFR15A
Abstract: No abstract text available
Text: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460
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BFR15A
BFR15A
Q62702-F460
fl235b05
GDb72b3
EHT08040
flE35b05
0Db72b4
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TA0522
Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
Text: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N05L,
RFP15N06L
TA0522.
RFP15N05L
O-220AB
RFP15Nopment.
TA0522
RFP15N06L
RFP15N05L
RFP15N05
AN7254
AN7260
TB334
RFP15N
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MP6750
Abstract: toshiba mp6750 toshiba motor
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 15A) trr = 0.15µs (Max.) (IC = 15A)
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MP6750
PW03010796
MP6750
toshiba mp6750
toshiba motor
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RFM15
Abstract: rfm15n15
Text: J W S RFM15N12, RFM15N15, RFP15N12, RFP15N15 Semiconductor October 1998 Data Sheet File Number 1443.1 Features 15A, 120V and 150V, 0.150 Ohm, N-Channel Power MOSFETs • 15A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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RFM15N12,
RFM15N15,
RFP15N12,
RFP15N15
TA09195.
TB334
AN7254
AN7260.
RFM15
rfm15n15
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Untitled
Abstract: No abstract text available
Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives UPS HEV Inverter Welding G C E Gate Collector Emitter Features
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IRG7CH37K10EF
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AN7254
Abstract: AN7260 RFP15N08L TB334
Text: RFP15N08L Data Sheet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET File Number 2840.1 Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications
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RFP15N08L
RFP15N08L
AN7254
AN7260
TB334
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IRG8CH20K10F
Abstract: No abstract text available
Text: IRG8CH20K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 15A E n-channel Applications • Industrial Motor Drives UPS HEV Inverter Welding G C E Gate Collector Emitter
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IRG8CH20K10F
IRG8CH20K10F
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D15P05
Abstract: No abstract text available
Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power
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RFD15P05,
RFD15P05SM,
RFP15P05
RFD15
RFP15
O220AB
O251AA
D15P05
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Untitled
Abstract: No abstract text available
Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7404
FSF9250R4
-200V,
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFPF15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF15S60S
FFPF15S60S
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