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    Optris GmbH OPTCTLT15CFCB3

    Ir Sensor, -50 To 600Deg C, M12X1, 36Vdc; Supply Voltage:36Vdc; Sensing Temperature Min:-50°C; Sensing Temperature Max:600°C; Response Time:150Ms; Operating Temperature Min:-20°C; Operating Temperature Max:85°C; Emissivity:0.1 To 1.1 |Optris OPTCTLT15CFCB3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark OPTCTLT15CFCB3 Bulk 1
    • 1 $454
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    15CFC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d2s diode

    Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:


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    15ffC AX078 J533-1) d2s diode D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078 PDF

    marking code aaat

    Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >


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    15ffC AX057 K52mm CJ533-1 marking code aaat AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C


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    IXGH30N60BD1 150PC 15CFC; O-247 PDF

    DIODE d3s

    Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
    Text: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation


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    15ffC -40-a It501 J533-1 DIODE d3s MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9 PDF

    AX078

    Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
    Text: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator


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    15ffC AX078 J533-1 AX078 MARKING JM 251C 25T160 d2s4m D2S4 122T PDF

    D1NS4 diode

    Abstract: AX057 marking aaat ji13t
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?


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    15ffC AX057 50e0-52mm J533-1 D1NS4 diode AX057 marking aaat ji13t PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N5002

    Abstract: No abstract text available
    Text: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153


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    2N5002, 2N5004. 2N5152, 2N5154 2N5002 PDF

    OX36D-S-MR-R

    Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
    Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing


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    12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON * 7 m TDA8140 I* ® q 1 [L M (q M © S HORIZONTAL DEFLECTION POWER DRIVER • CONTROLLED DRIVING OF THE POWER TRANSISTOR DURING TURN ON AND OFF PHASE FOR MINIMUM POWER DISSIPA­ TION AND HIGH RELIABILITY ■ HIGH SOURCE AND SINK CURRENT CAPA­


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    TDA8140 0D5fl334 PDF

    KA1M0680

    Abstract: No abstract text available
    Text: SAMSUNG POWER SWITCH KA1M0680 FEATURES TO-3P -P recision fixed operating frequency 70KHz -P u lse by pulse over current limiting -O v e r load protection -Internal thermal shutdown function -U n d e r voltage lockout -Internal high voltage sense FET -S o ft start


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    KA1M0680 70KHz) KA1M0680 PDF

    CRD Diode B

    Abstract: irgni120f06
    Text: International Sor]Rectifier PD-9.974C IRGNI120F06 “CHOPPER" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design • Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description


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    10KHz 50KHz IRGNI120F06 100nH C-200 CRD Diode B irgni120f06 PDF

    SJE1497

    Abstract: Transistor SJE1497
    Text: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE


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    SJE1497 300mA 150oC 15CfC Transistor SJE1497 PDF

    CDSH3-16-G

    Abstract: CDSH3-56-G CDSH3-70-G CDSH3-99-G SMD Diode
    Text: COMCHIP Small Signal Switching Diodes S M D D IO D E S P E C IA L IS T CDSH3-99-G/ 70-G/ 56-G/ 16-G Reverse Voltage: 85 Volts Forward Continue Current:155mA RoHS Device Features Designed for mounting on small surface. High speed switching. High mounting capability, strong surge


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    CDSH3-99-G/ 155mA OT-523, MIL-STD-750, CDSH3-16-G CDSH3-99-G CDSH3-70-G CDSH3-56-G OT-523 QW-B0009 CDSH3-56-G SMD Diode PDF

    CDP18S601

    Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
    Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from


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    132nd CDP18S601 CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007 PDF

    DM8570

    Abstract: DM8520 CV 7599 diode SN7401 DM9093 54175 MT28F400B3WG-8 vox vkw DM7570 logic diagram of 74185 SN54176
    Text: Introduction Here is the new Digital Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from small instruments to computer designs. For information regarding newer devices introduced since the printing of this handbook, or for further


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    54L/74L AN-36 AN-37 AN-43 AN-45 AN-47 AN-49 AN-60 AN-61 AN-68 DM8570 DM8520 CV 7599 diode SN7401 DM9093 54175 MT28F400B3WG-8 vox vkw DM7570 logic diagram of 74185 SN54176 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ CY7C225 CYPRESS _ SEMICONDUCTOR 512 x 8 Registered PROM Features • C M O S for optimum speed/pow er • Slim , 300 mil, 24 pin plastic or hermetic D IP , or 28 pin LCC floating gate technology and byte-wide intelligent program m ing algorithms.


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    CY7C225 CY7C225 CY7C225-30PC CY7C225-30DC CY7C225-30LC CY7C225-30DMB CY7C225-30LMB CY7C225-35DMB CY7C225-35LMB CY7C225-40PC PDF

    AN211

    Abstract: lm10blh LM10CT shunt regulator negative isolated voltage sensor
    Text: LM10 National mm Semiconductor LM10 Operational Amplifier and Voltage Reference General Description The LM10 series are monolithic linear ICs consisting of a precision reference, an adjustable reference buffer and an independent, high quality op amp. The unit can operate from a total supply voltage as low as


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    AN-211. AN211 lm10blh LM10CT shunt regulator negative isolated voltage sensor PDF

    1124G

    Abstract: TCDT1120 DIN 50014
    Text: Temic Semiconductors TCDT1120 G Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.


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    TCDT1120 D-74025 12-Dec-97 1124G DIN 50014 PDF

    power ic 501 amp

    Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
    Text: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )


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    MJE2955T MJE3055T 15CFC power ic 501 amp MJE305 MJE2955T ST MJE3055T PDF

    transistor 2SC2922

    Abstract: 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216
    Text: Æ & m o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1216 17 AMPERE POWER


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    2SA1216 2SC2922 150oC 600mA 400mA 300mA VCE-12 transistor 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216 PDF

    d 5287 transistor

    Abstract: 2N6127 transistor c 5287 A12LC
    Text: TYPE 2N6127 P-N-P SILICON POWER TRANSISTOR H IG H -F R E Q U E N C Y , HIGH-PO W ER T R A N S IS T O R W ITH C O M P U T E R -D E S IG N E D IS O T H E R M A L G E O M E T R Y 3 05 H mc < < '" S ra £ « 40 mJ Reverse Energy Rating with lc = 20 A and 4 V Reverse Bias


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    2N6127 2N6128 d 5287 transistor transistor c 5287 A12LC PDF

    15 3cv sec

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V


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    IRG4BC40K O-247AC O-22C1AB 15 3cv sec PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF