FDP2670
Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and
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FDP2670/FDB2670
FDP2670
D2Pak Package dimensions
CBVK741B019
EO70
F63TNR
FDB2670
FDP7060
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP6644/FDB6644
CBVK741B019
EO70
F63TNR
FDB6644
FDP6644
FDP7060
NDP4060L
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P1 SOT-89
Abstract: No abstract text available
Text: SOT-89 Tape and Reel Data SOT-89 Packaging Configuration: Figure 1.0 Packaging Description: SOT-89 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multi layer film (Heat Activated
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OT-89
330cm
P1 SOT-89
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TO-252 N-channel power MOSFET
Abstract: No abstract text available
Text: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V
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FDD2670
TO-252 N-channel power MOSFET
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Untitled
Abstract: No abstract text available
Text: FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior
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FDD6035AL
FDD6690A
FDD6035AL
O-252
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high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
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FDD6512A
Abstract: FDU6512A
Text: FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6512A/FDU6512A
O-251AA)
O-252
O-252)
FDD6512A
FDU6512A
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Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
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Untitled
Abstract: No abstract text available
Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP6060
NDB6060
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FDB7045L
Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP7045L/FDB7045L
FDB7045L
CBVK741B019
EO70
F63TNR
FDP7045L
FDP7060
NDP4060L
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TO220 Semiconductor Packaging
Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDP6676/FDB6676
TO220 Semiconductor Packaging
CBVK741B019
EO70
F63TNR
FDB6676
FDP6676
FDP7060
NDP4060L
marking code ng Fairchild
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Weight sensor 5kg
Abstract: 301LB 937in 327N 281LB UL758 713in 2672N 835in L320Q
Text: www.nipponpulse.com L320 Linear Shaft Motor UNLESS OTHERWISE SPECIFIED: Dimensions are in MM [IN] Tolerances are as follows: * Note 1 Cable length 300mm The bending radius of the motor cable should be 31.8 mm wire diameter 5.3 * 6 as suggested by the wire manufacturer.
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300mm
L320T
L320X
Weight sensor 5kg
301LB
937in
327N
281LB
UL758
713in
2672N
835in
L320Q
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zener diode 3.0 b2
Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7050
NDB7050
zener diode 3.0 b2
m 9835
zener diodes color coded
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7050
NDP4060L
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emerson three phase dc motor driver service note
Abstract: yaskawa 1000 A - manual ibl2403 Fanuc linear motor servo amplifier fanuc servo motor fanuc part number S1000 BECKHOFF DO 65N 1400 sinusoidal encoder Emerson TEMPERATURE STATOR WINDING
Text: INSTALLATION AND USER’S GUIDE THE NEXT-GENERATION ULTRA-PRECISION BRUSHLESS LINEAR MOTOR ● SIMPLE ● HIGH-PRECISION ● NON-CONTACT LINEAR SHAFT MOTOR Nippon Pulse America, Inc. a subsidiary of Nippon Pulse Motor Co., Ltd . Linear Shaft Motor Installation and Users Guide
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IL-Z-4P-S125T3-E
Abstract: AMB210204 IL-Z-4P-S125L3-E AMB345910 AMB240207 AMB140206 AMB140207 AMB140209 AMB1409 AMB140906
Text: 反射型 MA运动传感器 不易受检测对象物颜色 反射率 影响的小型三角测距式传感器。满足传感器 邻接使用和低消耗电流化的要求，产品系列中有增加了外部触发型。 短型(H型) •特点 ■用途 1. 不易受检测对象物反射率的影响，可
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30V100mA
5V27V)
IL-Z-4P-S125L3-E
IL-Z-4P-S125T3-E
AMV9001
IL-Z-4S-S125C3
IL-Z-4P-S125T3-E
AMB210204
IL-Z-4P-S125L3-E
AMB345910
AMB240207
AMB140206
AMB140207
AMB140209
AMB1409
AMB140906
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB6060L
NDP4060L
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ME2-6-M-B07C-1-4-D
Abstract: PT02A-10-6P Bendix controller gefran 1000 gefran me1 gefran 500 controller ME2-6-M-B07C-1-4-D-000 gefran 1000 CONTROLLER Bendix 6-pin C08WLS PT02A-10-6P Bendix 6 pin
Text: MELT PRESSURE TRANSMITTERS 4-20 mA output Main features ME0 The rigid stem configuration makes installation fast and easy ME1 • Pressure ranges from: 0-35 to 0-2000 bar / 0-500 to 0-30000 psi • Strain gage Wheatstone bridge • Accuracy : <±0.25% FSO H ; <±0.5% FSO (M)
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1/2-20UNF
M18x1
100bar-1500psi
1/2-20UNF
700bar
457mm
ME0-8-M-P03M-1-4-0-000
3000psi
ME2-6-M-B07C-1-4-D
PT02A-10-6P Bendix
controller gefran 1000
gefran me1
gefran 500 controller
ME2-6-M-B07C-1-4-D-000
gefran 1000 CONTROLLER
Bendix 6-pin
C08WLS
PT02A-10-6P Bendix 6 pin
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FDP5680
Abstract: No abstract text available
Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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FDP5680/FDB5680
FDP5680
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Untitled
Abstract: No abstract text available
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB6644S
FDP6644
FDP7060
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d marking code dpak transistor
Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580
Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDD3580/FDU3580
O-25opment.
d marking code dpak transistor
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD3580
FDD6680
FDU3580
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D5019
Abstract: 19n10 5019N
Text: Model 5019 & 5019N Cable Assembly - Minigrabber Test Clips To Bantam Plug FEATURES: • Shielded cable to reduce noise • Provides quick access from Bantam Jack to terminals • Bantam Plug is molded to the cable to provide optimum durability MATERIALS:
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5019N
01\D5019
D5019
19n10
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m 9835
Abstract: NDP4060L CBVK741B019 EO70 F63TNR FDB5690 FDP5690 FDP7060
Text: FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS ON = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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FDP5690/FDB5690
m 9835
NDP4060L
CBVK741B019
EO70
F63TNR
FDB5690
FDP5690
FDP7060
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ i l l rights n s trn i 2 3 4 SWAO 5 6 SWA 3 A Sch i rm-0 15-20mm screening-0 J5-20mm n \ y All Diiensions in •> Nicht tolerierte Halle/F re e sin Minuets Techn. Character. Original Size DIN A 4 Dat. Detail. Insp. Naie Sch 1:1 D a t .
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15-20mm
J5-20mm
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