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    152-BALL MICRON Search Results

    152-BALL MICRON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    152-BALL MICRON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


    Original     		PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    D9KG

    Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
    Text: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF 152-Ball MT46HxxxMxxLxCG 09005aef833913f1/Source: 09005aef833913d6 D9KG marking code micron label marking aa5 M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21

    MT46H64M32

    Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ
    Text: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF 152-Ball MT46HxxxMxxLxCG MT46HxxxMxxLxKZ 09005aef833913f1/Source: 09005aef833913d6 MT46H64M32 MT46H128 MT46H64M32L2CG-6 MT46H128M lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ

    Untitled

    Abstract: No abstract text available
    Text: MS46H64M32L2SB-XX *PRELIMINARY 2Gb LPDDR 2 x 32Mx32 FEATURES  Package: GENERAL DESCRIPTION • 152 Plastic Ball Grid Array (PBGA), 14 x 14 mm Microsemi MS46H64M32L2SB package-on-package (PoP) MCP product combines two Mobile LPDRAM devices in a single MCP.


    Original     		PDF MS46H64M32L2SB-XX 32Mx32) MS46H64M32L2SB 268M-bit

    MT41J512M8

    Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
    Text: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb


    Original     		PDF MT41J1G4 MT41J512M8 MT41J512M4 MT41J1G4; MT41J256M8 correla-3900 09005aef83188bab/Source: 09005aef83169de6 MT41J1G4 MT41J512M8 "2Gb DDR3 SDRAM" srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333

    2267.1

    Abstract: 74385 68595 7686 drv 8807 MO-151 MXED102 MXED202 MXED203 R159
    Text: Preliminary MXED203 160-Channel OLED Row Driver FEATURES: OVERVIEW: • Clare Micronix’s MXED203 is a row-multiplexed display driver for OLED panel displays. The MXED203 directly supports up to 160-row OLED panel displays, or can be cascaded for controlling


    Original     		PDF MXED203 160-Channel MXED203 160-row V-30V S-16329 D-71522 2267.1 74385 68595 7686 drv 8807 MO-151 MXED102 MXED202 R159

    63-ball

    Abstract: TN-00-08
    Text: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options


    Original     		PDF MT47H512M4 MT47H256M8 09005aef83fa94e3/Source: 09005aef8266ac6e 63-ball TN-00-08

    SPC564A80

    Abstract: njd287 SPC564A80L7 spc563 D65050 e200z448n3 SPC563M64 SPC564A74 philips half bridge ballast LBGA208
    Text: SPC564A80B4, SPC564A80L7 32-bit MCU family built on the embedded Power Architecture Features • ■ 150 MHz e200z4 Power Architecture core – Variable length instruction encoding VLE – Superscalar architecture with 2 execution units – Up to 2 integer or floating point instructions


    Original     		PDF SPC564A80B4, SPC564A80L7 32-bit e200z4 24-entry SPC564A80 njd287 SPC564A80L7 spc563 D65050 e200z448n3 SPC563M64 SPC564A74 philips half bridge ballast LBGA208

    MT41K512M8

    Abstract: sac305 A1A4M DDR3L MT41K256M8 MT41K1G4
    Text: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks


    Original     		PDF MT41K1G4 MT41K512M8 09005aef8460911b MT41K512M8 sac305 A1A4M DDR3L MT41K256M8 MT41K1G4

    StatPro-150

    Abstract: 29EE020 29EE512 a15 1334 28SF040 29EE010 228A10 STATPRO150
    Text: Die Sales Specifications INTRODUCTION TO UNENCAPSULATED DIE This document provides the user with guidelines for processing, testing, and resolving applications issues associated with purchasing unencapsulated SST flash EEPROM die. Product electrical specifications, functional descriptions, and bonding diagrams are not included. This information is available in the appropriate


    Original     		PDF 28SF040 StatPro-150 29EE020 29EE512 a15 1334 29EE010 228A10 STATPRO150

    MICRON BGA PART MARKING

    Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)


    Original     		PDF MT44K64M18 MT44K32M36 576Mb MT44K32M18 MT44K64M18 MT44K32M36. MT44K32M36RCT-125 MICRON BGA PART MARKING RTT120 MT44K RLDRAM 3 MT44K32M36

    U2140

    Abstract: U2141 ARM720T CL-PS6700 CS53L32 EP7212 EP7309 MO-151 u2114 u2202
    Text: EP7309 Data Sheet FEATURES High-Performance, Low-Power System on Chip Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled ■ Ultra low power


    Original     		PDF EP7309 ARM720T 64-entry EP7309 DS507PP1 U2140 U2141 CL-PS6700 CS53L32 EP7212 MO-151 u2114 u2202

    i7238

    Abstract: u2164 u2117 u2147 IR LED and photodiode FLASHER SEQUENTIAL LED U2146 ARM720T u2137 EP7212
    Text: EP7309 Data Sheet FEATURES High-Performance, Low-Power System on Chip Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled ■ Ultra low power


    Original     		PDF EP7309 ARM720T 64-entry EP7309 DS507PP1 i7238 u2164 u2117 u2147 IR LED and photodiode FLASHER SEQUENTIAL LED U2146 u2137 EP7212

    MTfc8g

    Abstract: MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16
    Text: Micron Confidential and Proprietary 2GB, 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC2GMTEA-WT, MTFC4GMTEA-WT, MTFC8GLTEA-WT, MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT


    Original     		PDF MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT 169-ball 09005aef8495885a n2m400 MTfc8g MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16

    EP7212

    Abstract: U2146 ssi 202 ARM720T CS53L32 EP7312 TBD 234 V12 U2201 U244 Blinker
    Text: EP7312 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled


    Original     		PDF EP7312 ARM720T 64-entry DS508PP2 EP7312 EP7212 U2146 ssi 202 CS53L32 TBD 234 V12 U2201 U244 Blinker

    U2.8

    Abstract: MICRON mcp ARM720T EDB7312 EP7211 EP7311 U283 63D18 U29-6 13005 m8
    Text: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled


    Original     		PDF EP7311 ARM720T 64-entry DS506PP1 EP7311 EP7312 U2.8 MICRON mcp EDB7312 EP7211 U283 63D18 U29-6 13005 m8

    MT44K32M36

    Abstract: No abstract text available
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns


    Original     		PDF MT44K64M18 MT44K32M36 168-ball RL3-1600) 576Mb 09005aef84ebb323 MT44K32M36

    CMPA2060025D

    Abstract: No abstract text available
    Text: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2060025D CMP2060025D CMPA20 CMPA2060025D

    ATF-21100

    Abstract: 6SS4 ATF-21100-GP1 AT-8111
    Text: HEWLETT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4 4 4 7 5 A 4 D D D T T I E T4fl H H P A ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features • • • Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


    OCR Scan     		PDF ATF-21100 AT-8111) ATF-21100 metalli33 6SS4 ATF-21100-GP1 AT-8111

    ATF-21100

    Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
    Text: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


    OCR Scan     		PDF ATF-21100 AT-8111) ATF-21100 mi-172 AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152

    Untitled

    Abstract: No abstract text available
    Text: p October 1996 Edition 2.0 Z DATASHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRA YS CE61 SERIES PRODUCT SUMMARY DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed


    OCR Scan     		PDF 74175b

    ATF21100-GP3

    Abstract: TF2110 ATF-21100-GP1
    Text: Thal HEWLETT WlHM PA C K A R D ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • _ 4»3 • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB


    OCR Scan     		PDF ATF-21100 AT-8111) TF-21100 asS22 ATF21100-GP3 TF2110 ATF-21100-GP1

    ATF-21100

    Abstract: ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111
    Text: HEWLETT-PACKARD/ CMPNTS m blE D • H EW LETT PA C K A R D 44475Ö4 □ □□cm 2 ATF-21100 AT-8111 0.5-6 GHz Low NoiS6 Gallium Arsenide FET Features • • • T4Û ■ HPA Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical


    OCR Scan     		PDF ATF-21100 AT-8111) ATF-21100 ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111