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    1SS187

    Abstract: No abstract text available
    Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS187 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS187

    1SS193

    Abstract: No abstract text available
    Text: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS193 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS193

    1SS190

    Abstract: No abstract text available
    Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS190 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS190

    TRANZORB

    Abstract: HGTD8P50G1 HGTD8P50G1S
    Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC


    Original     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns 150oC O-252AA HGTD8P50G1 HGTD8P50G1S 1-800-4-HARRIS TRANZORB

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant includes all homogeneous materials FEATURES • HIGH TEMPERATURE 150OC *See Part P Number N b System S for f Details


    Original     		PDF 150OC 50Vdc C/120Hz 120Hz 10KHz 100KHz

    Untitled

    Abstract: No abstract text available
    Text: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Description Features • 675 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCU900N60Z 150oC

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors- High Temperature 150oC , High Reliability SMD Tantalum Molded Chip AND TEC I INNOVAT O L OGY TH3 Series Tantalum N HN CAPACITORS O 19 62-2012 TH3 - High Temperature Molded Solid Tantalum Chip Capacitors


    Original     		PDF 150oC) AEC-Q200 VMN-PT9193-1208

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant FEATURES includes all homogeneous materials • HIGH TEMPERATURE 150OC *See Part Number System for Details • CAPACITANCE VALUES UP TO 1,000µF


    Original     		PDF 150OC 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: MCC MPSA42   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components THRU MPSA43 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA42 MPSA43 150oC 625mW MPSA42 ----A42 MPSA43 ----MPSA43

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


    Original     		PDF MMBTA44 150oC 350mW OT-23 OT-23-3L, perature-------------------------------55 50mAdc, 10mAdc, 20Vdc, 10mAdc

    Untitled

    Abstract: No abstract text available
    Text: MCC Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature x MPSA94   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Case Material: Molded Plastic.


    Original     		PDF MPSA94 150oC 625mW

    MMBTA44 3d

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


    Original     		PDF MMBTA44 150oC 350mW OT-23 OT-23-3L, MMBTA44 3d

    marking eh

    Abstract: No abstract text available
    Text: MCC BCW66H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction


    Original     		PDF BCW66H 330mW OT-23 150oC OT-23, MIL-STD-202, 100MHz marking eh

    pin configuration pnp transistor BC558

    Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor


    Original     		PDF BC556 BC557 BC558 625mW 150oC pin configuration pnp transistor BC558 BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A transistor BC556b BC557C polarity transistor c 557B

    transistor marking s79

    Abstract: No abstract text available
    Text: MCC BCW68H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction


    Original     		PDF BCW68H 330mW OT-23 150oC OT-23, MIL-STD-202, 100MHZ transistor marking s79

    bc557 and application

    Abstract: No abstract text available
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x Case Material: Molded Plastic.


    Original     		PDF BC556 BC557 BC558 150oC 625mW bc557 and application

    2N3819 equivalent

    Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
    Text: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State


    Original     		PDF 150oC 2N4858 2N4858A 2N4393 2N4859 2N4860 2N4860A 2N4861 2N3819 equivalent 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA44 150oC 625mW

    transistor bc548 bp

    Abstract: transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c
    Text: MCC BC546A/B/C BC547A/B/C BC548A/B/C   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x


    Original     		PDF BC546A/B/C BC547A/B/C BC548A/B/C 625mW 150oC transistor bc548 bp transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c

    BC557C

    Abstract: transistor bc558 features
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor


    Original     		PDF BC556 BC557 BC558 625mW 150oC BC557C transistor bc558 features

    sot-23 marking code .S79

    Abstract: BCX70G BCX70H marking ag s79 marking code transistor marking s79
    Text: MCC BCX70G THRU BCX70K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.


    Original     		PDF BCX70G BCX70K 250mW OT-23 150oC OT-23, MIL-STD-202, BCX70H BCX70J sot-23 marking code .S79 BCX70H marking ag s79 marking code transistor marking s79

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N5401 HDWXUHV z z • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2N5401 625mW 150oC

    80 L hall effect sensor 3 pin

    Abstract: BIPOLAR HALL EFFECT SWITCH, SOT23
    Text: AH175 Hall Effect Latch For High Temperature „ Features „ General Description - Bipolar Hall effect latch sensor - 3.5V to 20V DC operation voltage - Open collector pre-driver - 25mA output sink current - Chip power reverse-connection protection - Operating temperature: -40oC~150oC


    Original     		PDF AH175 -40oC 150oC AH175 80 L hall effect sensor 3 pin BIPOLAR HALL EFFECT SWITCH, SOT23

    Untitled

    Abstract: No abstract text available
    Text: MCC MPSA42 THRU   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA43 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF MPSA42 MPSA43 625mW 150oC MPSA42 ----A42 MPSA43 ----MPSA43