ZSDR-230
Abstract: No abstract text available
Text: Switch SPDT , 50Ω ZSDR-230+ Typical Performance Data FREQUENCY MHz 10 20 50 100 200 500 553 792 1000 1103 1342 1509 1653 1892 2131 2370 2609 2848 2920 3000 INSERTION LOSS TTL Low @ 0V (dB) IN-OUT , "ON" ISOLATION TTL High @ 5V (dB) IN-OUT , "OFF" IN (:1)
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ZSDR-230+
ZSDR-230
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COM16
Abstract: ML9052 OKI M 5238
Text: Pr E2B0052-19-66 el im ar This version: Jun. 1999 ML9052 in y ¡ Semiconductor ML9052 ¡ Semiconductor 132-Channel LCD Driver with Built-in RAM for LCD Dot Matrix Displays GENERAL DESCRIPTION The ML9052 is an IC for dot matrix graphic LCD devices carrying out bit map display. This IC
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E2B0052-19-66
ML9052
132-Channel
ML9052
COM16
OKI M 5238
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irs 530
Abstract: 9051D diode+cross+reference+SL+1515
Text: J2B0053-19-64 ¡ 電子デバイス 作成：1999年6月 ML9050/9051 l ML9050/9051 暫定 液晶ドットマトリックス用132チャンネルRAM内蔵LCDドライバ n 概要
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J2B00531964
ML9050/9051
ML9050/9051
132RAMLCD
ML9050/9051LSI8
ML9050/9051CMOS
ML905065132165
ML905149132149
ML9050/ML905165
irs 530
9051D
diode+cross+reference+SL+1515
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Untitled
Abstract: No abstract text available
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
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RN1507
RN1509
RN1508
RN2507
RN2509
RN1907
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RN1507
Abstract: RN1508 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit in mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
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RN1507RN1509
RN1507
RN1508
RN1509
RN2507
RN2509
RN1907
RN1908
RN1909
RN1509
RN1907
RN1908
RN1909
RN2509
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RN1507
Abstract: RN1508 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
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RN1507RN1509
RN1507
RN1508
RN1509
RN2507
RN2509
RN1907
RN1908
RN1909
RN1509
RN1907
RN1908
RN1909
RN2509
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RN1507RN1509
Abstract: RN1508 RN1507 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
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RN1507
RN1509
RN1508
RN2507
RN2509
RN1907
RN1908
RN1909
RN1507RN1509
RN1509
RN1907
RN1908
RN1909
RN2509
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Untitled
Abstract: No abstract text available
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
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RN1507RN1509
RN1507
RN1508
RN1509
RN2507
RN2509
RN1907
RN1908
RN1909
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Untitled
Abstract: No abstract text available
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads) z With built-in bias resistors
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RN1507RN1509
RN1507
RN1508
RN1509
RN2507
RN2509
RN1907
RN1908
RN1909
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Untitled
Abstract: No abstract text available
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507, RN1508, RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads) z With built-in bias resistors
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RN1507â
RN1509
RN1507,
RN1508,
RN2507
RN2509
RN1907
RN1908
RN1909
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Saronix
Abstract: S1509 S1500 Saronix 100 MHz oscillator SARONIX 94 smd diode code B2 S-1509 S-150-9 SMD 4608 28.6363MHZ
Text: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating
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S150x
ST150x
10ppm
DS-197
Saronix
S1509
S1500
Saronix 100 MHz oscillator
SARONIX 94
smd diode code B2
S-1509
S-150-9
SMD 4608
28.6363MHZ
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Untitled
Abstract: No abstract text available
Text: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors
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RN1507â
RN1509
RN1507
RN1508
RN2507
RN2509
RN1907
RN1908
RN1909
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28.6363MHZ
Abstract: S1509 28.636 smd diode code B2 SMD MARKING CODE 202 S1500 5- pin smd vm, smd marking CA
Text: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating
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S150x
ST150x
10ppm
DS-197
28.6363MHZ
S1509
28.636
smd diode code B2
SMD MARKING CODE 202
S1500
5- pin smd vm,
smd marking CA
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10000 watt stabilizer transformer winding formula
Abstract: BUSS SR-5 T3.15A 250V mini project using microcontroller toy car OC-106 94V0 C Buss SR-5 T2A 250v T2A 250v BUSS SS-5 PCF 7953 T2A 250v SS-5 OC106 T2A 250v BUSS
Text: Circuit Protection and Power Management Solutions Full Line Electronics Catalog 2007 Electronic Components INTRODUCTION From overcurrent and overvoltage protection to supercapacitors and magnetics, Cooper Bussmann provides integrated solutions that meet the evolving needs of technology-driven markets. Cooper
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CB-5010
10000 watt stabilizer transformer winding formula
BUSS SR-5 T3.15A 250V
mini project using microcontroller toy car
OC-106 94V0 C
Buss SR-5 T2A 250v
T2A 250v BUSS SS-5
PCF 7953
T2A 250v SS-5
OC106
T2A 250v BUSS
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Untitled
Abstract: No abstract text available
Text: MEJ1 Series www.murata-ps.com 5.2kVDC Isolated 1W DC/DC Converters FEATURES n Basic/supplementary isolation to UL 609502 n UL60601 3rd Ed recognition2 n UL 94V-0 package material Single n Single and dual outputs n SIP package style n 5.2kVDC isolation n 3.3V, 5V, 12V, 15V & 24V inputs
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UL60601
UL60950
UL60601
applica001
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KR-5R5C155-R
Abstract: No abstract text available
Text: Coin Cell Supercapacitors KR Series Features & Benefits: • • • • High specific capacitance Low leakage current Long cycle life Eco-friendly Typical Applications: Leaded Device Description Cooper Bussmann PowerStor® supercapacitors are unique, ultra-high capacitance devices utilizing
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BU-SB07355
KR-5R5C155-R
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xi 1507
Abstract: Transistor 1507 tA 1507
Text: TOSHIBA RN1507-RN1509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RMi>;n7 R N i ç n a r m i s h q • * ■ v ■ M r ’*wr m g u « ■ m m m t g ■ « ■ v ■ v <*MT MT Unit in mm • • • • • Including Two Devices in SMV (Super Mini Type with 5 leads)
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RN1507-RN1509
RN2507-
RN1907
RN1908
RN1909
RN1508
RN1507
xi 1507
Transistor 1507
tA 1507
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DI9952
Abstract: DS11509
Text: DI9952 VISHAY DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
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DI9952
DS11509
DI9952
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IRL520
Abstract: 027Q 561C
Text: PD-9.561C International S Rectifier IRL520 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive VDSS=100V • RDS on S pecified a t V g s =4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling
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IRL520
O-220
IRL520
027Q
561C
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IRLZ14
Abstract: 556C
Text: International Rectifier P D -9 .5 5 6 C IRLZ14 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive ^ dss - 60V • RDS on Specified at V gs =4V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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IRLZ14
O-220
IRLZ14
556C
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Untitled
Abstract: No abstract text available
Text: 4A5 545 B DDlbOOO 400 * I N R International Hag Rectifier _ HEXFET Power MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • 175°C Operating Temperature
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IRLZ34
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IRLZ14
Abstract: No abstract text available
Text: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching
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4A55HS2
IRLZ14
554S2
IRLZ14
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IRL510
Abstract: MARKING sih
Text: International S Rectifier PD-9.560C IRL510 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling
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IRL510
O-220
IRL510
MARKING sih
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pj 88 diode
Abstract: IRL530 pj 57 diode 562C mosfet ir 250p DIODE PJ 88
Text: PD-9.562C International Säg Rectifier IRL530 HEXFET P o w e r M O S F E T • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • V dss _ 100 V RDS on S p e cifie d a t V g s = 4 V & 5V • 175°C Operating Temperature • Fast Switching
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IRL530
O-220
lnt6IT13tÃ
pj 88 diode
IRL530
pj 57 diode
562C
mosfet ir 250p
DIODE PJ 88
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