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    150 WATTS POWER AMPLIFIER LAYOUT Search Results

    150 WATTS POWER AMPLIFIER LAYOUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    150 WATTS POWER AMPLIFIER LAYOUT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor PDF

    subwoofer 400 watts amplifier

    Abstract: 12V mono amplifier 400 watts 400w mono amplifier circuit 200w subwoofer circuit subwoofer 80Hz low pass filter 12v 400W AUDIO AMPLIFIER stereo amplifier 400W car subwoofer amplifier circuit 200W RMS CAR AMPLIFIER PASSIVE line level crossover
    Text: L A B O R A T O R I E S L A B O R A T O R I E S Congratulations ! 3 Specifications 3 Features 4 S302 About Protection Circuitry 6 Amplifiers and 2 Ohm Operation 6 Electrical Wiring 6 Power Fuses 6 Mounting the Amplifier 6 Low Input Wiring 7 S702 Two Channel Speaker Wiring


    Original     		S1002 S1004 S1204 S1204 subwoofer 400 watts amplifier 12V mono amplifier 400 watts 400w mono amplifier circuit 200w subwoofer circuit subwoofer 80Hz low pass filter 12v 400W AUDIO AMPLIFIER stereo amplifier 400W car subwoofer amplifier circuit 200W RMS CAR AMPLIFIER PASSIVE line level crossover PDF

    gammatron

    Abstract: 150 watts power amplifier layout 1500 watt audio amplifier HK-154-3 heintz HK-154-2
    Text: Engineering D ata Sheet HK-154-1 Tentative 11-36 SÂCfflBïflÆSriSEIK] TYPE H K -154 PHYSICAL DATA P l a t e .Tantalum G r i d .Tantalum F ila m e n t .Thoriated Tungsten


    OCR Scan     		HK-154-1 HK-154 gammatron 150 watts power amplifier layout 1500 watt audio amplifier HK-154-3 heintz HK-154-2 PDF

    motorola MRF

    Abstract: Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1150MA MRF1150MB The RF Line Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. 150 W PEAK, 960-1215 MHz MICROWAVE POWER


    OCR Scan     		MRF1150MA MRF1150MB motorola MRF Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf PDF

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4 PDF

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 PDF

    ECG1284

    Abstract: No abstract text available
    Text: PHILIPS E C G INC 17E ECG Semiconductors bbS3=12fl D004Ö71 4 T-74-05-01 ECG1283, ECG 1284 5.3 W Audio Power Amplifier ECG1283 Features ♦ Normal ECG1283 and Reverse (1284) pin configurations for easier PC board layout. No damage for reverse insertion • Slngle-ln-llne package designed for


    OCR Scan     		ECG1283) T-74-05-01 ECG1283, ECG1283 ECG1283 ECG1284 ECG1284 D004fl PDF

    500 watts amplifier schematic diagram

    Abstract: ECG914 CG708 500 watts audio amplifier diagram 150 watts power amplifier layout 100 watts IC audio amplifier circuit diagram 10 watt power amplifier chassis schematic diagram 115-VOLT FN 1016 8 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: PHILIPS E C G INC 17 E » bbSB'ìSÙ OQOBSbQ 4 ECG814 4-WATT AUDIO POWER AMPLIFIER WITH PREAMPLIFIER semiconductors AUDIO POWER AMPLIFIER WITH PREAMPLIFIER O U T LIN E DIM ENSIONS . . . a general-purpose monolithic audio power amplifier with separate preamplifier designed for phonograph, radio, and T V audio systems.


    OCR Scan     		ECG814 EC0743, ECQ708 ECG814 500 watts amplifier schematic diagram ECG914 CG708 500 watts audio amplifier diagram 150 watts power amplifier layout 100 watts IC audio amplifier circuit diagram 10 watt power amplifier chassis schematic diagram 115-VOLT FN 1016 8 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM PDF

    200 watt audio amplifier with ic

    Abstract: 100 watts IC audio amplifier circuit diagram 3 volt Regulated Power Supply Schematic Diagram without ECG814 400 watts power amplifier circuit diagram
    Text: PHILIPS E C INC G 17 E » bbSB'ìSÙ OQOBSbQ 4 ECG814 4-WATT AUDIO POWER AMPLIFIER WITH PREAMPLIFIER semiconductors O U T LIN E DIM ENSIONS AUDIO POWER AM PLIFIER WITH PREAM PLIFIER . . . a general-purpose monolithic audio power amplifier with separate preamplifier designed for phonograph, radio, and T V audio systems.


    OCR Scan     		ECG814 ECQ703 ECG614has 200 watt audio amplifier with ic 100 watts IC audio amplifier circuit diagram 3 volt Regulated Power Supply Schematic Diagram without ECG814 400 watts power amplifier circuit diagram PDF

    J297

    Abstract: J920 capacitor 1000 pF x 500 volt transistor J132 transistor bd136 transistor R1A 37
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF899 The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800-960 MHz.


    OCR Scan     		MRF899 MRF899Test RF899 J297 J920 capacitor 1000 pF x 500 volt transistor J132 transistor bd136 transistor R1A 37 PDF

    RF640

    Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz


    OCR Scan     		MRF6404 DCS1800 PCS1900/Cellular MRF6404K RF6404 RF6404K F6404 MRF6404K RF640 ez808 transistor b 745 capacitor 104 Z5 R/Vitramon PDF

    37281

    Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular 37281 TRANSISTOR A331 transistor 31C resistor A331 A153 A331 PDF

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		MRF6404/D MRF6404 DCS1800 PCS1900/Cellular MRF6404 MRF6404/D TRANSISTOR A331 PDF

    TRANSISTOR A331

    Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC PDF

    capacitor 104 Z5

    Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular PDF

    TRANSISTOR A331

    Abstract: 395C-01
    Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 DCS1800 PCS1900/Cellular TRANSISTOR A331 395C-01 PDF

    6bq6gt

    Abstract: 6BQ6 25bq6 30-FRAME 25BQ6GT
    Text: C25BQ6GT } 6BQ 6G T the 6 bq 6 gt is HORIZONTAL DEFLECTION. HIGH beam THE pen to d e ARE S UCH PLATE AS IS IN B R OU GHT OUT CAP LAYOUT. ITS GOOD P E R F O R M A N C E for RECEIVERS TO A TOP IN C I R C U I T TO P R O V I D E s p e c i f i c a l l y TELEVISION


    OCR Scan     		C25BQ6GT 6bq6gt 6BQ6 25bq6 30-FRAME 25BQ6GT PDF

    c 2579 power transistor

    Abstract: hf power transistor NPN c 2579 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.


    OCR Scan     		MRF899 c 2579 power transistor hf power transistor NPN c 2579 transistor PDF

    ECG1260

    Abstract: C101 C104 ECG1261
    Text: PHILIPS E C G INC 17E LbSBTEfl 0 0 0 4032 ECG1260, ECG1261 5.5 W Audio Power Amplifier Sem iconductors Features • Normal ECG1260 and Reverse (ECG1261) pin configurations for ea9ier PC board layout. No damage for Reverse Insertion • Single-in-line package designed for


    OCR Scan     		CG1260, ECG1261 T-74-05-01 ECG1260 ECG1260) ECG1261) ECG1260 ECG1261 C101 C104 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS E C G INC 17E ECG Semiconductors bfci53liEÛ 0004Û35 S ECG1260, ECG1261 T-74-05-01 5.5 W Audio Power Amplifier ECG1260 Features • Normal ECG1260 and Reverse (ECG1261) pin configurations for easier PC board layout. No damage for Reverse Insertion


    OCR Scan     		bfci53l ECG1260) ECG1261) ECG1260 ECG1261 al120 ECG1260, ECG1261 T-74-05-01 PDF

    si diode 1N4007

    Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout PDF