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    150 WATTS POWER AMPLIFIER CIRCUIT Search Results

    150 WATTS POWER AMPLIFIER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    150 WATTS POWER AMPLIFIER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		PDF 2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100

    Rf amplifier with frequency 1150 MHZ 20 db gain

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak


    Original     		PDF MRF10500 MRF10150 MRF10150 Rf amplifier with frequency 1150 MHZ 20 db gain

    2N5758

    Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
    Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		PDF 2N5758/D* 2N5758/D 2N5758 motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    "IEEE-488 GPIB"

    Abstract: 150A250
    Text: MODEL 150A250 150 WATTS CW 100 kHz - 250 MHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 150A250 amplifier is a self-contained, broadband unit designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required.


    Original     		PDF 150A250 150A250, IEEE-488. RS-232 "IEEE-488 GPIB"

    150A400M3

    Abstract: 150A400M2 150A400 150A400M1 1000 watt mosfet power amplifier IEEE-488 GPIB 60Lb
    Text: MODEL 150A400 M1, M2, M3 150 WATTS CW 100 kHz - 400 MHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 150A400 amplifier is a self-contained, broadband unit designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required. Utilization of push-pull MOSFET circuitry


    Original     		PDF 150A400 150A400 150A400, 150A400M1 150A400M2 150A400M3 150A400M1 150A400M3 150A400M2 1000 watt mosfet power amplifier IEEE-488 GPIB 60Lb

    150A100BM3

    Abstract: 150A100BM1 150A100BM2 150a 150A100B 150A100BM4
    Text: MODEL 150A100B M1, M2, M3, M4 150 WATTS CW 10 kHz - 100 MHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 150A100B amplifier is a self-contained, broadband unit designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required.


    Original     		PDF 150A100B 150A100B 150A100B, 150A100BM1 150A100BM2 150A100BM3 150A100BM1 150A100BM4 150A100BM3 150A100BM2 150a 150A100BM4

    subwoofer 400 watts amplifier

    Abstract: 12V mono amplifier 400 watts 400w mono amplifier circuit 200w subwoofer circuit subwoofer 80Hz low pass filter 12v 400W AUDIO AMPLIFIER stereo amplifier 400W car subwoofer amplifier circuit 200W RMS CAR AMPLIFIER PASSIVE line level crossover
    Text: L A B O R A T O R I E S L A B O R A T O R I E S Congratulations ! 3 Specifications 3 Features 4 S302 About Protection Circuitry 6 Amplifiers and 2 Ohm Operation 6 Electrical Wiring 6 Power Fuses 6 Mounting the Amplifier 6 Low Input Wiring 7 S702 Two Channel Speaker Wiring


    Original     		PDF S1002 S1004 S1204 S1204 subwoofer 400 watts amplifier 12V mono amplifier 400 watts 400w mono amplifier circuit 200w subwoofer circuit subwoofer 80Hz low pass filter 12v 400W AUDIO AMPLIFIER stereo amplifier 400W car subwoofer amplifier circuit 200W RMS CAR AMPLIFIER PASSIVE line level crossover

    "IEEE-488 GPIB"

    Abstract: 200S1G4 IEEE-488 GPIB conn female 300 pins 200S1G4M1
    Text: MODEL 200S1G4 M1 200 WATTS CW 0.8-4.2GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 200S1G4 is a portable, self-contained, air-cooled, broadband, completely solid-state amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. Push-pull circuitry is utilized in all high


    Original     		PDF 200S1G4 200S1G4 200S1G4, IEEE-488 RS-232 200S1G4M1 "IEEE-488 GPIB" IEEE-488 GPIB conn female 300 pins 200S1G4M1

    4cx1500a

    Abstract: SK-831 4cx1500 CX1500A sk831 SK-806 microwave tubes
    Text: The 4CX1500A is a general purpose tetrode for use up to and through VHF. Insulation is ceramic and the thoriated tungsten filament is a rugged mesh design. The screen terminal is a continuous ring which allows good isolation between the plate and the control grid circuit. The 4CX1500A is


    Original     		PDF 4CX1500A CX1500A 4CW50 4CX1500A SK-831 4cx1500 CX1500A sk831 SK-806 microwave tubes

    3 w RF POWER TRANSISTOR 2.7 ghz

    Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
    Text: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5


    Original     		PDF PHA2731-190M Amplifier--190 PHA2731-190M 3 w RF POWER TRANSISTOR 2.7 ghz radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit 190-W

    3CX400A7

    Abstract: Eimac 3cx400a7 3CX400A7/8874 8874 high power Triode 3cx400a7 Eimac 8874
    Text: The 3CX400A7/8874 is a compact high-mu power triode intended for use in zero bias Class B amplifiers in audio or RF applications. Operation with zero bias simplifies circuitry and cathode driven operation is attractive since a power gain as high as twenty can be obtained.


    Original     		PDF 3CX400A7/8874 3cX400A7/ 4CW50 3CX400A7/8874 3CX400A7 Eimac 3cx400a7 8874 high power Triode 3cx400a7 Eimac 8874

    zo102

    Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13
    Text: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include


    Original     		PDF 870MegHz zo102 MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13

    transistor B 722

    Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722
    Text: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc


    OCR Scan     		PDF MJE720 MJE721 MJE722 MJE710, MJE711, MJE712 BD165, 8D167, BD169 MJE720 transistor B 722 JE 720 transistor JE720 JE722 BD165 equivalent 500 WATT MJE722

    VK200-19

    Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts


    OCR Scan     		PDF MRF314 VK200-19 motorola 2395 JMC5601 NPN/TE 2395 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts


    OCR Scan     		PDF MRF314

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and M ode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak


    OCR Scan     		PDF MRF10500 376B--Z9 MRF10150 MRF10150

    mbd5300

    Abstract: mbd-5300 2N6487 MSD6100
    Text: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A


    OCR Scan     		PDF 2N6487 O-22QAB T0-220-AB 2N6487 mbd5300 mbd-5300 MSD6100

    2N3846

    Abstract: 2N3847 PAWOR ITT 232-2
    Text: TYPES 2N3846, 2N3847 N-P-N TRIPLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER APPLICATIONS • 150 Watts at 100°C Case Temperature • 200 V, 300 V Rated Collector-Emitter Voltages • Max Va|„„ of 0.75 V at 10 A l c • Max Thermal Resistance of 0.5 deg/W


    OCR Scan     		PDF 2N3846, 2N3847 2N3846 2N3847 PAWOR ITT 232-2

    300 watts amplifier circuit diagram

    Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
    Text: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating


    OCR Scan     		PDF I52TH l52TH 300 watts amplifier circuit diagram Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram Scans-0017300

    6dq5

    Abstract: 8236 tube tube 6DQ5 B898 B8-98 6DQ5 tube tung-sol 8236
    Text: PRODUCI BULLETIN TUNG-SOL INDUSTRIAL ELECTRON TUBE TYPE 8236 FEBRUARY 1963 BEAM POWER PENTODE D E S C R I P T I O N — The Tung-Sol 8236 is an all service beam power pentode particu­ larly suited for use in horizontal deflection circuits and as an R-F power amplifier up


    OCR Scan     		PDF 50-watt 6dq5 8236 tube tube 6DQ5 B898 B8-98 6DQ5 tube tung-sol 8236

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    200w car audio amplifier

    Abstract: 200W RMS CAR AMPLIFIER mosfet 500 watts audio amplifier 500 watt mosfet audio amplifier circuit diagram 200w power amplifier circuit diagram car amplifier 200w circuit BMA Electronics 200w audio amplifier circuit diagram 500 watt mosfet power amplifier circuit diagram BMA25S
    Text: AMPLIFICATION BMA ELECTRONICS BMA10L DATASHEET 100 WATT POWER AMPLIFIER The BMA10L Power Amplifier module is an encapsulated and electronically protected power amplifier module with integral heatsink and five electrical connections. The circuit uses components of the highest quality and is assembled using


    OCR Scan     		PDF BMA10L 110mm, Yorkshire-LS21 1943850710-Fax 200w car audio amplifier 200W RMS CAR AMPLIFIER mosfet 500 watts audio amplifier 500 watt mosfet audio amplifier circuit diagram 200w power amplifier circuit diagram car amplifier 200w circuit BMA Electronics 200w audio amplifier circuit diagram 500 watt mosfet power amplifier circuit diagram BMA25S