TL139
Abstract: c803
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
H-33288-6
H-34288-4/2
TL139
c803
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TL2012
Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
TL2012
TRANSISTOR tl131
C801
C802
C803
R250
8C802
tl1252
TL1-16
ATC 221
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PTFA041501E
Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
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PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
BCP56
LM7805
R250
LM7805 voltage regulator packages
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2SC5200
Abstract: No abstract text available
Text: 2SC5200 2SC5200 Pb Free Plating Product Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage
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2SC5200
2SA1943
2SC5200
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2SA1943
Abstract: No abstract text available
Text: 2SA1943 Pb Free Plating Product 2SA1943 Pb 150 Watt Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5200 APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage
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2SA1943
2SC5200
2SA1943
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Untitled
Abstract: No abstract text available
Text: TERMINATION FLANGE MOUNT 150 WATT DATA SHEET PART NUMBER: 32-1003 FEATURES EN 11-0656 07/15/2011 SHEET 1 OF 1 APPLICATIONS Tab Launch High Power Integrated Heat Sink Low VSWR Mobile Networks Broadcast High Power Amplifiers Instrumentation Isolators Military
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SMT252503ALN2F
Abstract: No abstract text available
Text: TERMINATION SURFACE MOUNT 150 WATT DATA SHEET PART NUMBER: SMT252503ALN2F FEATURES Low Profile Surface Mount High Power Aluminum Nitride Substrate Low VSWR Ideal For Automated Assembly EN 11-1034 09/19/11 SHEET 1 OF 1 APPLICATIONS Mobile Networks Broadcast
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SMT252503ALN2F
SMT252503ALN2F
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MSCQ02
Abstract: module
Text: polyfet rf devices MSCQ02 RF Power Module Power = 150.0 Watts Bandwidth = 30 to 512 Mhz Gain = 17.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSCQ02 is a 150 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is
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MSCQ02
MSCQ02
module
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Fujitsu GaAs FET Amplifier design
Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2A
FLL1500IU-2A
FCSI0299M200
Fujitsu GaAs FET Amplifier design
FLL1500
Fujitsu GaAs FET Amplifier
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FLL1500IU-2C
Abstract: eudyna GaAs FET Amplifier
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
eudyna GaAs FET Amplifier
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FLL1500IU-2C
Abstract: No abstract text available
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
FCSI1199M200
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ELMWOOD SENSORS
Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high
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AN1308/D
AN1308
AN1308/D*
ELMWOOD SENSORS
AN1308
500 watts 12 VOLTS audio amplifier schematics
500 watts audio amplifier schematics
1000 watts audio amplifier schematics
elmwood sensors ltd
300 watts amplifier schematics
Motorola design of audio amplifier an1308
12 volt audio amplifier class D schematic
ELMWOOD
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Untitled
Abstract: No abstract text available
Text: LY8890 1.0 Watt Audio power Amplifier Preliminary. 1.4 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required Low noise during turn-on and turn-off transitions
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LY8890
LY8890
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LY8891
Abstract: No abstract text available
Text: LY8891 1.0 Watt Audio power Amplifier Rev. 1.4 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required Low noise during turn-on and turn-off transitions
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LY8891
LY8891
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Untitled
Abstract: No abstract text available
Text: LY8891 1.0 Watt Audio power Amplifier Preliminary. 1.3 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required Low noise during turn-on and turn-off transitions
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LY8891
LY8891
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5 Watt S-Band Power Amplifier
Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
Text: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched 1 -C.70 .530 .085 10 10X .050 MIN.
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AM42-0055
AM42-0055
CR-15
5 Watt S-Band Power Amplifier
2 Watt S-Band Power Amplifier
s-band 50 Watt power amplifier
S-band mmic Watt
amplifier 1000 watt
HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
S-Band Power Amplifier
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Untitled
Abstract: No abstract text available
Text: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.
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AM42-0055
AM42-0055
CR-15
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LY8896
Abstract: 300 Watt Amplifier IC audio power amplifier 500 watt
Text: LY8896 1.4 Watt Audio Power Amplifier Rev. 1.2 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No output capacitors and networks or bootstrap capacitors required Low noise during turn-on and turn-off transitions
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LY8896
LY8896
300 Watt Amplifier IC
audio power amplifier 500 watt
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Untitled
Abstract: No abstract text available
Text: LY8891 2.0 Watt Audio Power Amplifier Rev. 1.8 FEATURES GENERAL DESCRIPTION 2.0V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No output capacitors and networks or bootstrap capacitors required Low noise during turn-on and turn-off transitions
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LY8891
LY8891
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Rogers 4350
Abstract: HMC454ST89
Text: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
Rogers 4350
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HMC455LP3
Abstract: No abstract text available
Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB
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HMC455LP3
HMC455LP3
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Untitled
Abstract: No abstract text available
Text: KSC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS • Complement to KSA928A • Collector Dissipation PC=1 W • 3 Watt Output Application ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit VcBO 30 30 5 2 1 150
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KSC2328A
KSA928A
00S47b7
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gammatron
Abstract: audio amplifier 2400 watt vacuum tube amplifier 400 watt audio amplifier heintz 810 audio amplifier
Text: CAMMATRON type 354 GENERAL PURPOSE TRIODE 150 watt radiation cooled triode, available in two amplification factors: The C a low mu of 14 and the E a high mu of 35. Exceptional HF performance and ability to withstand high voltages. PHYSICAL DATA Tantalum
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2N512
Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE
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2N512,
2N512A,
2N512B
15-Amp
150-Watt
7S222
2N512
Texas Germanium
5 amp germanium pnp
Germanium Amplifier
Germanium Transistor
GERMANIUM PNP LOW POWER TRANSISTORS
2N512A
Germanium power
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