1HVUSF40K
Abstract: 1HVUF25K 1HV10K 1HV15K 1HV20K 1HV25K 1HV30K 1HV40K 1HV50K 1HV60K
Text: HIGH VOLTAGE LOW CURRENT, RECTIFIER BLOCKS WITH INSERT MOUNTING – 1 HV SERIES Rectifier Block L 0.4 Typ. 0.75 FIGURE 10 0.25 6-32 Thread 2 Mtg. Inserts Inches Max. Reverse Recovery Time Trr(nsec) 150 150 150 150 150 150 150 150 150 75 75 75 75 75 75 75
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1HVUF40K
1HVUF50K
1HVFE10K
1HVUSF10K
1HVUSF15K
1HVUSF20K
1HVUSF25K
1HVUSF30K
1HVUSF40K
1HVUSF50K
1HVUSF40K
1HVUF25K
1HV10K
1HV15K
1HV20K
1HV25K
1HV30K
1HV40K
1HV50K
1HV60K
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TEMPILSTIK
Abstract: TEMPIL
Text: TEMPIL°, INC. 2901 Hamilton Blvd. South Plainfield, NJ 07080 PHONE: 908-757-8300 MATERIAL SAFETY DATA SHEET MSDS NO: TS - 150°C DATE: June 10, 2000 EMERGENCY NO: 800-424-9300 FAX: 908-757-9273 SECTION 1 MATERIAL IDENTIFICATION PRODUCT NAME: TEMPILSTIK 150°C/302°F
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C/302
TEMPILSTIK
TEMPIL
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12M250
Abstract: ABB inverter motor fault code ptc s1450 MC4046 REC310PE72 10 amp 12 volt solar charger circuits SOLAR INVERTER 1000 watts circuit diagram
Text: Contents System Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Batteries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Grid-Tie Systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
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Untitled
Abstract: No abstract text available
Text: Nickel Temperature Sensors 1E/ 1K – Product Series Temperature Range: –60°C.+150°C Nickel temperature sensor elements with PTFE-insulated connections Technical Data Specification: DIN 43760 Temperature range: -60°C to +150°C Temperature Coefficient:
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1000h
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High Temperature
Abstract: Snubber HT1 Series high-temperature
Text: HT1 SERIES Snubber with Thermakon Technology High Temperature DC Snubber Capacitor Electronic Concepts’ new polymer operates to 150°C with the highest peak-current rating of any metallized dry film capacitor. FEATURES - Continuous operation at 150°C
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PI-810
Abstract: 3530MHz PI-820 MCE 2000
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
3530MHz
MCE 2000
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N6097-1N6098 50 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 1.0°C/W junction to Case
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1N6097-1N6098
1N6097
1N6098
MIL-PRF-19500,
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PI-810
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
PI-810
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PI-810
Abstract: 501V PI-820
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
501V
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Untitled
Abstract: No abstract text available
Text: CARDINAL COMPONENTS Series CX2016 SMD CRYSTAL Ultrathin thickness 0.45mm. Automatic mounting is possible. Reflow is possible RoHs compliant and lead free. Part Numbering Example: Z CX2016 CX2016Z - A0 - B3 C3 -150 - 16.0 D12 B3 A0 C3 16.0 150 SERIES ADDED FEATURES
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CX2016
CX2016Z
10ppm,
100uW
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N6095-1N6096 25 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 2.0°C/W junction to Case
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1N6095-1N6096
1N6095
1N6096
MIL-PRF-19500,
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scr 540
Abstract: creepage cke scr 848 diode
Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590
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D77P2900S
Abstract: T52P800S SCR 25 amps PIV 600 D77P4400 D38P1000S3 Ignitron D77P4400S Standard recovery 1200 Amp 1600 volt high power diode D38P750S T30P600S
Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590
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CL2A335037502C
D77P2900S
T52P800S
SCR 25 amps PIV 600
D77P4400
D38P1000S3
Ignitron
D77P4400S
Standard recovery 1200 Amp 1600 volt high power diode
D38P750S
T30P600S
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Untitled
Abstract: No abstract text available
Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106
SiP21107
SiP21108
150-mA
2002/95/EC.
2002/95/EC
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MA 2820
Abstract: No abstract text available
Text: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106/7/8
150-mA
SiP21106
SiP21107
SiP21108
18-Jul-08
MA 2820
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SIP21108DT
Abstract: MARKING NJ CODE SOT 23 sip21108 sot23-5 sensor LDR connected to PIC
Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106
SiP21107
SiP21108
150-mA
11-Mar-11
SIP21108DT
MARKING NJ CODE SOT 23
sip21108 sot23-5
sensor LDR connected to PIC
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Untitled
Abstract: No abstract text available
Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106
SiP21107
SiP21108
150-mA
2011/65/EU
2002/95/EC.
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sip21108dt-t1-e3
Abstract: SiP21106DT-18-E3 74442
Text: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106/7/8
150-mA
SiP21106
SiP21107
SiP21108
08-Apr-05
sip21108dt-t1-e3
SiP21106DT-18-E3
74442
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TRansistor A 940
Abstract: NJL5125D NJL1110B NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL5126D NJL112IB
Text: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE NJL1104B NJL1110B NJL1112B NJL1120B NJL1121B NJL1122B NJL1120F NJL1121F DESCRIPTION PD [mW] 150 150 225 170 170 170 170 170 GaAs Infrared LED GaAlAs Infrared LED wmmW&mmmm IF H I VR m Xp [nm] 100 100
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NJL1104B
NJL1110B
NJL1112B
NJL1120B
NJL112IB
NJL1122B
NJL1120F
NJL1121F
NJL5154D*
NJL5154M*
TRansistor A 940
NJL5125D
NJL1104B
NJL1112B
NJL1120B
NJL1120F
NJL1121F
NJL5126D
NJL112IB
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Untitled
Abstract: No abstract text available
Text: PDF016T PDF032T PDF050T PDF100T ~i t~G ED ED ED "•SI' A B C D E F G H PD FD 16T 175 150 85 125 112 10 0 6 .4 55 PDP032T 180 150 85 125 112 100 6 .4 55 PD FO 50T 265 200 115 150 135 120 6 .4 64 P D F10O T 340 260 J 5 L 180 165 150 1 0 .5 80 Approvals: ft
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PDF016T
PDF032T
PDF050T
PDF100T
PDP032T
OHM-50
F016T
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NJL5126D
Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Text: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170
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NJL1110B
NJL1112B
NJL1120B
NJL112IB
NJL1122B
NJL1120F
NJL1121F
NJL5155M*
NJL5156M*
NJL5127D
NJL5126D
NJL5125D
NJL1121F
NJL6103B
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2NS404
Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55
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2N338
2N339A
2N340
2N340A
2N341
2N341A
2N342
2N342A
2N343
2N343A
2NS404
Transistors 2n551
2N1018
2N1478
2N1620
2N551
2N2951
2N3920
2N3444
2N2204
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ceramic attenuator MHz
Abstract: No abstract text available
Text: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES ‘ PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
L50dB
ceramic attenuator MHz
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CTU1S
Abstract: CTB34 ad lot id CTB-34 CTU22S
Text: sanken El e c t r i c u s a HE Fast Recovery Diodes V rm V Type N a \ ^ 1350 CTU-G2DR 1350 CTU-G3DR 150 FMU-11S , R FMU-12S, R 250 450 FMU-14S, R 650 FMU-16S, R 150 FMU-21S, R 250 FMU-22S, R FMU-24S, R 450 FMU-26S, R L 650 150 FMU-31S, R 250 FMU-32S, R 450
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0GQO133
FMU-11S
FMU-12S,
FMU-14S,
FMU-16S,
FMU-21S,
FMU-22S,
FMU-24S,
FMU-26S,
FMU-31S,
CTU1S
CTB34
ad lot id
CTB-34
CTU22S
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