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    15 AMP NPN DARLINGTON POWER TRANSISTORS Search Results

    15 AMP NPN DARLINGTON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    15 AMP NPN DARLINGTON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


    Original     		PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original     		PDF NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


    Original     		PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


    Original     		PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    automotive ignition tip162

    Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
    Text: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		PDF TIP162 automotive ignition tip162 TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16

    Untitled

    Abstract: No abstract text available
    Text: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


    Original     		PDF BDW42* BDW46, BDW47* BDW46 BDW42/BDW47 O-220AB BDW42 BDW47

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    80 amp 30v npn darlington

    Abstract: 2N6388 npn darlington transistor darlington power transistor 10a
    Text: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		PDF 2N6388 O-220 80 amp 30v npn darlington 2N6388 npn darlington transistor darlington power transistor 10a

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    80 amp 80v npn darlington

    Abstract: 9016 transistor 2N6388
    Text: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		PDF 2N6388 80 amp 80v npn darlington 9016 transistor 2N6388

    BDW42G

    Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198

    TO-220AB transistor package

    Abstract: bdw42G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package

    TL235

    Abstract: D73FY4D1 D72FY4D1
    Text: SURFACE-MOUNT D72FY4D1,2 NPN POWER DARLINGTON TRANSISTORS 80 VOLTS 4 AMP, 15 WATTS Designed for switching applications, ham m er drive, pulse motor drive applications, power amplifier applications. Features: CASE STYLE D-PAK • High DC Current Gain : hFE 1 = 2000(M in.) (V c E * 2V, lc = 1A)


    OCR Scan     		PDF D72FY4D1 D73FY4D1 TL235

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201

    SK9458

    Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
    Text: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,


    OCR Scan     		PDF Wbfl73 aODqfl37 SK9443 SK9442 SK9444 SK9445 SK9446 SK9447 SK9447 T-023 SK9458 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9450

    SK3893

    Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
    Text: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3861 SK3721 SK3862 SK3722 SK3865A SK3866A SK3867A SK3867A T-036 SK3896 SK3893 sk3896 SK3936 SK3935 SK93 sk3948 SK3897 sk3895

    SK3858

    Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
    Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band


    OCR Scan     		PDF T02bfl bv180 SK3715 SK3275 SK3716A SK3717 SK3718 SK3719 T-041 SK3840 SK3858 SK3854 SK3466 SK3747 SK3836 SK3839 SK3861 SK3859 SK3722

    mj10012

    Abstract: MJ-10012
    Text: NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10012 is a high voltage, high-current darlington transistor designed for automotive ignition,switching regulator and motor con­ trol applications. NPN MJ10012 FEATURES: Continuous Collector Current - lc = 10 A


    OCR Scan     		PDF MJ10012 MJ-10012

    ecg36

    Abstract: ecg52 ECG37 60 amp npn darlington power transistors transistor ecg36 dual matched PNP ECG157 ECG46 ECG47 ECG37MCP
    Text: Transistors cont d Collector To Base Volts Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) bv ECG36 NPN-Si, Pwr Amp, Hi Speed ECG38MP* Switch (Compl to ECG37) Collector To Emitter Volts Base to Emitter Volts bvceo


    OCR Scan     		PDF ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 ecg52 60 amp npn darlington power transistors transistor ecg36 dual matched PNP ECG157 ECG46 ECG47

    TF 450

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


    OCR Scan     		PDF T0218 NTE2305) T0220 TF 450

    MJ10012

    Abstract: MJ-10012 100 amp darlington power transistors
    Text: /Z&MOSPEC NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10012 is a high voltage, high-current darlington transistor designed for automotive ignition,switching regulator and motor con­ trol applications. FEATURES: Continuous Collector Current - lc = 10 A


    OCR Scan     		PDF MJ10012 MJ-10012 100 amp darlington power transistors

    bipolar power transistor

    Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:


    OCR Scan     		PDF BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40