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    NXP Semiconductors A2T14H450-23NR6

    RF MOSFET LDMOS 31V OM1230-42
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    DigiKey A2T14H450-23NR6 Reel 150
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    Newark A2T14H450-23NR6 Bulk 150
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    Richardson RFPD A2T14H450-23NR6 150
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    EBV Elektronik A2T14H450-23NR6 12 Weeks 150
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    Flip Electronics A2T14H450-23NR6 596
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    14H4502 Datasheets Context Search

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    12270

    Abstract: 5SHX 14H4502 IGCT thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 Doc. No. 5SYA 1227-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 14H4502 CH-5600 12270 5SHX 14H4502 IGCT thyristor ABB

    igct abb

    Abstract: IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 14H4502 5SYA1227-03 Ambient1227-03 CH-5600 igct abb IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max

    IGCT thyristor ABB

    Abstract: 5SHX 14H4502
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 14H4502 5SYA1227-03 14H4502 CH-5600 IGCT thyristor ABB 5SHX 14H4502

    5SHX 14H4502

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 1100 ITSM = 9 VT0 = 1.5 rT = 1.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 PRELIMINARY Doc. No. 5SYA 1227- 02 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original     		PDF 14H4502 CH-5600 5SHX 14H4502

    diode sy 170

    Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
    Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.


    OCR Scan     		PDF