Untitled
Abstract: No abstract text available
Text: Product Specification 108-9070 14Aug07 Rev A All Paragraphs Revised High Density Hybrid Power Connectors 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for Tyco Electronics high density hybrid power connectors. These connectors, on .300 inch centerlines, are used in combination with 3
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14Aug07
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CTL5248-078-054
Abstract: No abstract text available
Text: 501-268 Qualification Test Report 14Aug07 Rev A All Paragraphs Revised High Density Hybrid Power Connectors 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics High Density Hybrid Power Connectors to determine their conformance to the requirements of Product Specification 108-9070 Revision A.
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14Aug07
25Feb94
22Jul94.
CTL5248-078-054.
CTL5248-078-054
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SMAJ6.8A
Abstract: SMAJ6.8 Transient Voltage suppressor SMBJ6.5A SMBJ6.5A
Text: Application Note Vishay General Semiconductor Protecting for Repetitive Transient Voltages By Bruce Hartwig Senior Automotive Applications Engineer While lightning may not strike twice in the same place, in circuits which involve power switching, relays, or motor
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14-Aug-07
SMAJ6.8A
SMAJ6.8
Transient Voltage suppressor SMBJ6.5A
SMBJ6.5A
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MEPCO electra
Abstract: mepco capacitor surge lightning to smps MEPCO mepco RESISTOR MEPCO electra thermistor 319DA541T250AMA1 3120EA651T200BHA1 20 mf 25 metal rectifier diode MEPCO electra CAPACITOR 50
Text: Application Note Vishay General Semiconductor Hardening Power Supplies to Line Voltage Transients Originally presented at the Power Electronics Design Conference, October 1985, Anaheim, California Also published in Power Conversion and Intelligent Motion,
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14-Aug-07
MEPCO electra
mepco capacitor
surge lightning to smps
MEPCO
mepco RESISTOR
MEPCO electra thermistor
319DA541T250AMA1
3120EA651T200BHA1
20 mf 25 metal rectifier diode
MEPCO electra CAPACITOR 50
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SMBJ64A
Abstract: SMBJ12A
Text: Application Note Vishay General Semiconductor Using the Power vs. Time Curve By Bruce Hartwig Senior Automotive Applications Engineer How can the maximum transient power and current capability for silicon Transient Voltage Suppressors TVS be derived for conditions other than the 10/1000 µs pulse
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desc30
14-Aug-07
SMBJ64A
SMBJ12A
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very low leakage tvs
Abstract: "very low leakage" tvs TVS VISHAY current rating TVS
Text: Application Note Vishay General Semiconductor Series Stacking of TVS for Higher Voltages and Power HIGHER POWER By Bruce Hartwig Senior Automotive Applications Engineer HIGHER VOLTAGES In normal operation, a transient voltage suppressor should be invisible to the protected circuit. This is guaranteed by a
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5KE200
14-Aug-07
very low leakage tvs
"very low leakage" tvs
TVS VISHAY
current rating TVS
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b0340
Abstract: tia 568 c focis-3 EIA-455-171 FOCIS TIA-568-C TIA-604-3B EIA-455
Text: Qualification Test Report 501-577 07Jan09 Rev B LightCrimp* Plus Singlemode SC Connector Field Installable 1. INTRODUCTION 1.1. Purpose Testing was perform ed on Tyco Electronics LightCrim p Plus* singlem ode SC fiber optic connectors term inated to 900 :m tight buffer fiber or 3 m m jacketed cable to determ ine their conform ance to the
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07Jan09
ANSI/TIA-568-C
b0340
tia 568 c
focis-3
EIA-455-171
FOCIS
TIA-568-C
TIA-604-3B
EIA-455
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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CT3-42
Abstract: 8824 AN609
Text: SiE820DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiE820DF
AN609
CONFIG209
14-Aug-07
CT3-42
8824
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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PZT5401
Abstract: No abstract text available
Text: PZT5401 PNP Epitaxial Planar Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage
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PZT5401
OT-223
-10mA,
100MHz
14-Aug-07
OT-223
PZT5401
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surge PCB layout
Abstract: No abstract text available
Text: Application Note Vishay General Semiconductor TVS Placement The Critical Path to the Leading Edge By Jon Schleisner Senior Applications Engineer Reverse avalanche transient suppressors have excellent turn-on characteristics. Typically these devices turn on in
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surge PCB layout
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Untitled
Abstract: No abstract text available
Text: Application Note Vishay General Semiconductor Paralleling Transient Voltage Suppressors for Higher Power Capability By Bruce Hartwig Senior Automotive Applications Engineer Silicon avalanche transient voltage suppressors TVSs offer a great deal of flexibility in circuit protection. These
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5KE15)
14-Aug-07
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AN609
Abstract: SiE810DF
Text: SiE810DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiE810DF
AN609
CONFIG895
14-Aug-07
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SMBJ64A
Abstract: SMBJ10A
Text: Application Note Vishay General Semiconductor Determining Clamping Voltage Levels for a Broad Range of Pulse Currents By Bruce Hartwig Senior Automotive Applications Engineer VC = IP/IPP (VC max. - VBR max.) + VBR max. Where: IP = test pulse current IPP = max rated pulse current
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SMBJ10A
SMBJ64A
14-Aug-07
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Untitled
Abstract: No abstract text available
Text: Application Note Vishay General Semiconductor Protecting Low Current Loads in Harsh Electrical Environments By Bruce Hartwig Senior Automotive Applications Engineer Today’s sophisticated electronic systems feature sensors, transducers and microcontrollers which are often placed in
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5KP28A
14-Aug-07
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Untitled
Abstract: No abstract text available
Text: VLME/F/K23. Vishay Semiconductors Power Mini SMD LED FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • IR reflow soldering • Available in 8 mm tape • Low profile package
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VLME/F/K23.
2002/95/EC
2002/96/EC
08-Apr-05
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322 1102
Abstract: 7476 7476 data sheet 7476 datasheet AN609
Text: SiE818DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiE818DF
AN609
14-Aug-07
322 1102
7476
7476 data sheet
7476 datasheet
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0745
Abstract: M 8824 AN609
Text: SiE832DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiE832DF
AN609
CONFIG09
14-Aug-07
0745
M 8824
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2SD882 pnp
Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
Text: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO
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2SB772
2SD882
O-126
PNP/2SB772
NPN/2SD882
O-126
2SD882 pnp
2sb772
2SD882
br d882 p
D882 B772
D882
b772 p
J D882
transistor D882 datasheet
2SB77
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - , 1 2 - LOC ALL RIGHTS RESERVED. ES DIST 00 R E V IS IO N S p LTR A DESCRIPTION DATE RELEASE DWN APVD RC EW 14AUG07 D D CABLE.LT BLUE 1. ONE CABLE ASSEMBLY PACKAGED IN A POLY BAG.
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14AUG07
24AWG,
T568A.
14AUG2007
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 2 1 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC A L L RIGHTS RESERVED. ES D IS T R E V IS IO N S 00 p LTR A D E SC R IPTIO N DATE RELEASE DWN APVD RC EW 14AUG07 D D 1. ONE CABLE ASSEMBLY PACKAGED IN A POLY BAG.
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14AUG07
24AWG,
T568A.
31MAR2000
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J17-9
Abstract: No abstract text available
Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 1994 BY ^ C O 2 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS FEB 1994. REVISIO N S R E S ER V ED . LTR D D E S C R IP TIO N H R EV ISE D H R E VI SE D A PE R THESE DATE DWN ECR —0 7 —0 1 9 2 1 c
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31MAR2000
j179396
31MAR2000
J17-9
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PE-76
Abstract: No abstract text available
Text: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . 1 6.01 AMP 1471-9 R EV 3 1 M A R 2 0 0 0 P U B L IC A T IO N R IG H T S RESERVED. - , - 2 1 LOC AA D IS T R E V IS IO N S
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31MAR2000
14AUG07
06JUN2005
14AUG2007
PE-76
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