147 B TRANSISTOR Search Results

147 B TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

147 B TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMELAB PLC bPE D • 8133167 QQQOblO 147 H S U L B ■■■I _ T '-'i'V M = rr= MOSPOWER4 “ I G B T m i ” SEME LAB SML65G100BN 1000V 65A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	SML65G100BN SML65G100BN IL-STD-750 O-247AD	PDF
Untitled Abstract: No abstract text available Text: OP-147 P M i UNITY-GAIN STABLE, HIGH-SPEED OPERATIONAL AMPLIFIER ADVANCE PRODUCT INFORMATION FEATURES V ery H igh S lew R a t e . 300V /^s Typ . 4 5 M H z Typ High G a in -B a n d w id th	OCR Scan	OP-147 OP-147	PDF
75150 Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [i t 1 9 11 12 10 • 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE	OCR Scan	mA3039 MA3019 MA739 MA1488 MA1489, mA1489A mA3019 mA3026 mA3036 A3039 75150 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G	PDF
EL2006ACG Abstract: EL2006AG EL2006C EL2006CG EL2006L LH0032 Text: EL2006/EL2006A SÖE D • 3 1 2 ^ 5 5 7 0 DD2 D3 b 147 H E L A elantec MSN PERFORMANCEAMAlDfl INTSJRAfEOCIRCUITS EL2006/EL2006A 'r ' ^ - High Gain F astF E T In put Op Amp ELANTEC INC F e a tu r e s G en era l D e sc r ip tio n • • • • • • •	OCR Scan	EL2006/EL2006A LH0032 EL2006CG MDP0002 EL2006Q EL2006C /883B EL2006ACG EL2006ACG EL2006AG EL2006CG EL2006L LH0032	PDF
Untitled Abstract: No abstract text available Text: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm T D C 1 147 M o n o lith ic Video A/D C o n v e rte r 7 - B i t , 15 Msps Features Description • • • • • • • • The TDC1147 is a 7-bit flash analog-to-digital converter which has no pipeline delay between sampling and valid	OCR Scan	TDC1147 DS90001147	PDF
Untitled Abstract: No abstract text available Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm T D C 1 147 M o n o l i t h i c V i d e o A/D C o n v e r t e r 7 - B i t , 15 Msps Features Description • • • • • • • • The TDC1147 is a 7-bit flash analog-to-digital converter	OCR Scan	TDC1147 DS90001147	PDF
tip141 Abstract: TIP140 tip145 TIP142 TIPI42 Text: SGS-THOMSON «itmitmFl «! TIP140/141/142 TIP145/146/147 CO M PLEM EN T DARLINGTON TRANSISTORS • TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL	OCR Scan	TIP140/141/ TIP145/ TIP141, TIP142, TIP145 TIP147 TIP140, TIP141 TIP142 O-218 TIP140 TIPI42	PDF
Untitled Abstract: No abstract text available Text: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION	OCR Scan	TIP140/141/142 TIP141, TIP142, TIP145 TIP147 TIP140, TIP141 TIP142 O-218 TIP145,	PDF
SC1741 Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL Text: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ \| lr o c r ^ ig Î5 f e lÂ U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2	OCR Scan	SIP10) 801BX100) Nd022-01 dd022-01 dd92l-01 SC1741 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL	PDF
TIP142 Abstract: tip141.142 TIP147 morocco tip142/147 IP147 tip142 tip147 TIP146 IP142 TIP147 TIP141 Text: TIP141/142 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic	Original	TIP141/142 TIP146/147 TIP141and TIP142 O-218 TIP146 TIP147 O-218 IP141 IP142 tip141.142 TIP147 morocco tip142/147 IP147 tip142 tip147 IP142 TIP141	PDF
TIP142 Abstract: TIP147 tip141 morocco tip142/147 TIP147 morocco TIP141 TIP142 morocco TIP140 TIP145 TIP146 Text: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL	Original	TIP140/141/142 TIP145/146/147 TIP141, TIP142, TIP145 TIP147 O-218 TIP140, TIP141 TIP142 tip141 morocco tip142/147 TIP147 morocco TIP142 morocco TIP140 TIP146	PDF
TIP142 Abstract: TIP141 TIP147 TIP140 tip142/147 TIP145 TIP146 SGS-Thomson TIP147 morocco tip147 sgs-thomson Text: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL	Original	TIP140/141/142 TIP145/146/147 TIP141, TIP142, TIP145 TIP147 O-218 TIP140, TIP141 TIP142 TIP140 tip142/147 TIP146 SGS-Thomson TIP147 morocco tip147 sgs-thomson	PDF
TIP142 Abstract: TIP142 morocco TIP147 morocco TIP140 TIP141 TIP147 TIP147 TO-218 TIP145 TIP146 Text: TIP140/141/142 TIP145/146/147  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL	Original	TIP140/141/142 TIP145/146/147 TIP141, TIP142, TIP145 TIP147 O-218 TIP140, TIP141 TIP142 TIP142 morocco TIP147 morocco TIP140 TIP147 TO-218 TIP146	PDF
Untitled Abstract: No abstract text available Text: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 1 PNP Epitaxial Silicon Darlington Transistor	Original	TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147	PDF

p 945 Abstract: AN1294 PD57002 PD57002S 0918 158 BTS 132 SMD Text: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF	Original	PD57002 PD57002S PowerSO-10RF PD57002 PowerSO-10 p 945 AN1294 PD57002S 0918 158 BTS 132 SMD	PDF
tip142 equivalent Abstract: TIP142 tip147 transistor TIP140 TIP141 TIP145 TIP146 TIP147 tip146 equivalent Text: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 TO-3P 1 PNP Epitaxial Silicon Darlington Transistor	Original	TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 tip142 equivalent TIP142 tip147 transistor TIP140 TIP141 TIP145 TIP146 TIP147 tip146 equivalent	PDF
2SC1253 Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733 Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for	OCR Scan	MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733	PDF
2SC1253 Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12 Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in	OCR Scan	MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12	PDF
Transistor C G 774 6-1 Abstract: C G 774 6-1 1041T060 Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low	OCR Scan		PDF
3N123 Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B Text: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V	OCR Scan	3N123 TELEDYNE CRYSTALONICS 3N136 VE2B	PDF
sot-23 MARKING CODE ZA Abstract: sot-23 CODE 41 bfs17p mc Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code	OCR Scan	BFS17P OT-23 sot-23 MARKING CODE ZA sot-23 CODE 41 bfs17p mc	PDF
AN1294 Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR Text: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF	Original	PD57002 PD57002S PowerSO-10RF PD57002 PowerSO-10 AN1294 PD57002S BTS 472 E 0927 TRANSISTOR	PDF
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan		PDF
NS 8002 1151 Abstract: TO-66 CASE Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications	OCR Scan	MIL-S-19500/379 O-116) NS 8002 1151 TO-66 CASE	PDF

147 B TRANSISTOR Search Results

147 B TRANSISTOR Result Highlights (5)

147 B TRANSISTOR Datasheets Context Search

Untitled

Untitled

75150

EL2006ACG

Untitled

Untitled

tip141

Untitled

SC1741

TIP142

TIP142

TIP142

TIP142

Untitled

p 945

tip142 equivalent

2SC1253

2SC1253

Transistor C G 774 6-1

3N123

sot-23 MARKING CODE ZA

AN1294

KT 819 transistor

NS 8002 1151