Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP132A1545SR
XP132A1545SR
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2N7091
Abstract: No abstract text available
Text: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter
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2N7091
O-257AB
P-36731--Rev.
30-May-94
2N7091
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irf7381pbf
Abstract: No abstract text available
Text: PD - 95940 IRF7381PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Freel Description l l HEXFET® These P-Channel power MOSFETs from International Rectifier utilize advanced processing
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IRF7381PbF
EIA-481
EIA-541.
irf7381pbf
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EIA-541
Abstract: IRF7751
Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier
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IRF7751
EIA-481
EIA-541.
EIA-541
IRF7751
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Untitled
Abstract: No abstract text available
Text: PD - 96145A IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -30V RDS(on) max ID 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
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6145A
IRF7751GPbF
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Untitled
Abstract: No abstract text available
Text: FOR REVIEW ONLY IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
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IRF7751GPbF
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EIA-541
Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier
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IRF7751
EIA-541
IRF7751
TSSOP-8 footprint
7702 ST
irf 146
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HEXFET SO-8
Abstract: HEXFET TSSOP-8 mosfet p-channel 10A irf
Text: PD - 96145 IRF7751GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -30V RDS(on) max ID 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
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IRF7751GPbF
F7751G
HEXFET SO-8
HEXFET TSSOP-8
mosfet p-channel 10A irf
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Untitled
Abstract: No abstract text available
Text: PD - 96015 IRF7751PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A
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IRF7751PbF
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Untitled
Abstract: No abstract text available
Text: PD - 96015A IRF7751PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A
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6015A
IRF7751PbF
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31GF6 diode
Abstract: p600 mosfet MUR460 GENERAL SEMICONDUCTOR SMD DIODES ITO-220AC UGF5JT UG15JT UGF15JT UHF10JT BRIDGE RECTIFIER SMD
Text: Application Note Vishay General Semiconductor Power Factor Correction with Ultrafast Diodes By Neven A. Soric, Applications Engineer More and more switched mode power supplies SMPS are being designed with an active power factor correction (PFC) input stage. This is mainly due to the introduction of
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ITO-220AC
UHF10JT
UG12JT
O-220AC
UGB12JT
O-263AB
UGF12JT
UG15JT
31GF6 diode
p600 mosfet
MUR460
GENERAL SEMICONDUCTOR SMD DIODES
ITO-220AC
UGF5JT
UG15JT
UGF15JT
UHF10JT
BRIDGE RECTIFIER SMD
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AAT4601
Abstract: AAT4601IAS-T1 AAT4601IHS-T1 AAT4601IKS-T1
Text: AAT4601 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a 1.8A Current Limited P-channel MOSFET power switch designed for high-side load-switching applications.
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AAT4601
AAT4601
AAT4601IAS-T1
AAT4601IHS-T1
AAT4601IKS-T1
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3nf CAPACITOR
Abstract: 839B IXS839S1
Text: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically
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IXS839
IXS839A
IXS839B
IXS839/IXS839A/IXS839B
3000pF
IXS839/839B:
IXS839A/B:
3nf CAPACITOR
839B
IXS839S1
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AAT4601
Abstract: AAT4601IAS-B1 AAT4601IAS-T1 AAT4601IHS-B1 AAT4601IHS-T1
Text: AAT4601 1.5A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a 1.5A Current Limited P-channel MOSFET power switch designed for high-side load-switching applications.
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AAT4601
AAT4601
AAT4601IAS-B1
AAT4601IAS-T1
AAT4601IHS-B1
AAT4601IHS-T1
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TELEDYNE PHILBRICK 1464
Abstract: TELEDYNE PHILBRICK OP AMP 1464 MOSFET c 1464 power transistor
Text: 1464 High Speed Power MOSFET Driver Amplifier The 1464 is a high speed, FET input, transconductance ampli fier, designed to drive an external power MOSFET output stage. The use of an external output stage makes the 1464 extremely versatile, allowing the users to tailor the part to their require
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200pA
000yumhos
100dB.
00V//US
75V//US
00V//7S
110ns
150ns
230ns
750ns
TELEDYNE PHILBRICK 1464
TELEDYNE PHILBRICK OP AMP
1464 MOSFET
c 1464 power transistor
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TELEDYNE PHILBRICK 1464
Abstract: c 1464 power transistor
Text: 2 ÖE D iTELEDYNE COMPONENTS • öWbQE QÜGbEl 4 ü m 1464 -7 9 -/Ö High Speed Power MOSFET Driver Amplifier The 1464 is a high speed, FET input, transconductance ampli fier, designed to drive an external power MOSFET output stage. The use of an external output stage makes the 1464 extremely
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200pA
000/umhos
100dB.
100mA)
00V//us
26MHz
103dB
125mA
110ns
560mA)
TELEDYNE PHILBRICK 1464
c 1464 power transistor
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SQ-10a
Abstract: Teledyne Philbrick 1701 TELEDYNE PHILBRICK 4131-30 TELEDYNE PHILBRICK V to F 4701 Philbrick P85AU TELEDYNE PHILBRICK 1702 TELEDYNE PHILBRICK 2203 TELEDYNE PHILBRICK 1009 teledyne TP 1322 teledyne 4452
Text: TELEDYNE PHILBRICK M 1 C R C I R C U 1 T S UNITED STATES SOUTHEAST HEADQUARTERS 1640 Huron Trail WEST Allied Drive at Rte. 128 Dedham. MA 02026 Maitland. FL 82751 30423 Canwood Street Suite 212 Agoura Hills. CA 91301 Tel: 8188893827 Twx: 910.494 1949 Tel:
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SQ-10A
SQ-210
SQ-517
U5801
Teledyne Philbrick 1701
TELEDYNE PHILBRICK 4131-30
TELEDYNE PHILBRICK V to F 4701
Philbrick P85AU
TELEDYNE PHILBRICK 1702
TELEDYNE PHILBRICK 2203
TELEDYNE PHILBRICK 1009
teledyne TP 1322
teledyne 4452
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Untitled
Abstract: No abstract text available
Text: 4A5 545 B DDlbOOO 400 * I N R International Hag Rectifier _ HEXFET Power MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • 175°C Operating Temperature
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IRLZ34
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IRFI840G
Abstract: marking code C1L IRFI734G KAH marking
Text: PD-9.1001 International k?r Rectifier IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 450V R DS on = 1 -2 ^ lD = 3.4A
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IRFI734G
O-220
D-6380
IRFI840G
marking code C1L
IRFI734G
KAH marking
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Untitled
Abstract: No abstract text available
Text: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRF634S
SMD-220
SMD-220
D-6380
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Untitled
Abstract: No abstract text available
Text: PD-9.1001 International i » r R ectifier_ IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 450V
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IRFI734G
O-220
D-6380
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1RL2203
Abstract: IRL2203 Dt 7132 to22oab
Text: International io R PD-9.1019 R e c t if ie r IRL2203 PROVISIONAL HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s = 5 V & 10V
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IRL2203
O-220
1RL2203
IRL2203
Dt 7132
to22oab
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IRFY9120
Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Text: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFV460
IRFY044IM)
O-257AA
IRFY120
IRFY130
IRFY140
IRFY240
IRFY340
IRFY430
IRFY440
IRFY9120
diode ED 84
660B
IRFV460
ISFV460D
TO-257AB
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.660B INTERNATIONAL RECTIFIER I3R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV460 N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.
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IRFV460
IRFV460D
IRFV460U
O-258
MIL-S-19500
I-470
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