1450 TRANSISTOR Search Results

1450 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1450 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent	Original	PDF	PTF141501A PTF141501A a150-watt,
55AW Abstract: 1450 transistor Text: R.1.072099 1516-35 35 WATT, 28V, Pulsed Microwave 1450 - 1550 MHz Proposed Product CASE OUTLINE 55AW, Style 1 GENERAL DESCRIPTION The 1516-35 is a common base transistor capable of providing 35 Watts of Class C, RF output power over the band 1450-1550 MHz. This transistor is	Original	PDF	Vo20mA 55AW 1450 transistor
PTF141501A Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56 Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent	Original	PDF	PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
Untitled Abstract: No abstract text available Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz	Original	PDF	PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt
transistor D331 circuit diagram application Abstract: d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic PTFA142401EL D331 datasheet Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz	Original	PDF	PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt transistor D331 circuit diagram application d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic D331 datasheet
Untitled Abstract: No abstract text available Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz Description PTF140451E Package 30265 The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to	Original	PDF	PTF140451E PTF140451F PTF140451E PTF140451F 45-watt,
PTF140451E Abstract: CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 PTF140451F r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16 Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz PTF140451E Package 30265 Description The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to	Original	PDF	PTF140451E PTF140451F PTF140451E PTF140451F 45-watt, CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16
LM7805 Abstract: PTF141501E Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz	Original	PDF	PTF141501E PTF141501F 150-watt, PTF141501E* PTF141501F* LM7805
A 673 C2 transistor Abstract: LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND Text: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging	Original	PDF	PTF141501E PTF141501E 150-watt, H-30260-2 A 673 C2 transistor LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND
smd transistor A006 Abstract: No abstract text available Text: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging	Original	PDF	PTF141501E PTF141501E 150-watt, H-30260-2 smd transistor A006
Untitled Abstract: No abstract text available Text: Model 511067 COAXIAL RESONATOR OSCILLATOR 1450 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL	Original	PDF
PH1516-100 Abstract: No abstract text available Text: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching	Original	PDF	PH1516-100 5000pF lN5417 PH1516-100
transistor 832 Abstract: 831 transistor Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15LS-250PBRN transistor 832 831 transistor
Untitled Abstract: No abstract text available Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-40BRN

JESD625-a Abstract: 800B RO4350 Text: BLF7G15LS-300P Power LDMOS transistor Rev. 1 — 21 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF7G15LS-300P JESD625-a 800B RO4350
transistor 832 Abstract: No abstract text available Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15LS-250PBRN transistor 832
Untitled Abstract: No abstract text available Text: BLF7G15LS-300P Power LDMOS transistor Rev. 2 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF7G15LS-300P
RO4350 properties Abstract: RO4350 BLF7G15L-200 800B 15085 Text: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF7G15LS-200 RO4350 properties RO4350 BLF7G15L-200 800B 15085
13N50 Abstract: 8140115 nxp marking code M2 Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-250PBRN 13N50 8140115 nxp marking code M2
BU 0603 Abstract: 800B BLF6G15L 029-KW Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW
3590S-491-103 Abstract: 23n50 13N50 Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-40BRN 3590S-491-103 23n50 13N50
Untitled Abstract: No abstract text available Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15LS-250PBRN
BLF6G15L-40BRN Abstract: 800B RO4350 Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-40BRN BLF6G15L-40BRN 800B RO4350
Untitled Abstract: No abstract text available Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	PDF	BLF6G15L-250PBRN

1450 TRANSISTOR Search Results

1450 TRANSISTOR Result Highlights (5)

1450 TRANSISTOR Datasheets Context Search

Untitled

55AW

PTF141501A

Untitled

transistor D331 circuit diagram application

Untitled

PTF140451E

LM7805

A 673 C2 transistor

smd transistor A006

Untitled

PH1516-100

transistor 832

Untitled

JESD625-a

transistor 832

Untitled

RO4350 properties

13N50

BU 0603

3590S-491-103

Untitled

BLF6G15L-40BRN

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