Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP03039 Model: TA1077A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V
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Original
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1420MHz
MP03039
TA1077A
10dBm
1450MHz
TA1077A
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PDF
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillators MW500-1192 1420MHz to 2470MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1420MHz to 2470MHz 0.5/12 V 10 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz
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MW500-1192
1420MHz
2470MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP02013 Model: TA0890A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V
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1420MHz
MP02013
TA0890A
10dBm
1450MHz
TA0890A
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PDF
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Untitled
Abstract: No abstract text available
Text: Specification for an SMD Low Profile LC Filter MtronPTI P/N: LF9392-002 I. General & Electrical Requirements: Center Frequency FON : 1920MHz 1.0dB Passband: 1420MHz to 2420MHz, minimum Insertion Loss (@ the peak of transmission within the 1.0dB Passband): ≤ 2.5dB
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LF9392-002
1920MHz
1420MHz
2420MHz,
700MHz:
3200MHz
5000MHz:
EIAJ-STD-002
100-units
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PDF
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillators MW500-1192R 1420MHz to 2470MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1420MHz to 2470MHz 0.5/12 V 10 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -90 typ dBc/Hz
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Original
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MW500-1192R
1420MHz
2470MHz
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PDF
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1420MHz
Abstract: TA0890A
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1420MHz Part No: MP02013 Model: TA0890A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V
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Original
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1420MHz
MP02013
TA0890A
10dBm
1450MHz
TA0890A
1420MHz
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PDF
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transistor 91 330
Abstract: No abstract text available
Text: PT7711—5V 20-A Programmable Integrated Switching Regulator SLTS087A Revised 6/27/2002 Features • 5V Input Voltage • 20-A Output Current • 5-bit Programmable Output: 1.3V to 3.5V • High Efficiency (93%) • Differential Remote Sense • Over-Current Protection
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Original
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PT7711â
SLTS087A
27-Pin
PT7745
PT7711
transistor 91 330
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PDF
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K4T51043QB-GCCC
Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
K4T51043QB-GCCC
K4T51043QB-GCE6
K4T51043QB-GLE6
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PDF
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PT7711
Abstract: PT7712 PT7713 PT7714 PT7715 PT7744 SMD Transistors code
Text: PT7713—3.3V 20-A Programmable Integrated Switching Regulator SLTS149A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-bit Programmable: 1.8V to 2.55V (50mV Steps) • High Efficiency (90%) • Differential Remote Sense • Over-Current Protection
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Original
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PT7713--3
SLTS149A
27-Pin
PT7744
PT7713
PT7711
PT7712
PT7714
PT7715
PT7744
SMD Transistors code
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PDF
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PT7711
Abstract: PT7712 PT7713 PT7714 PT7715 PT7744
Text: PT7712—3.3V 20-A Programmable Integrated Switching Regulator SLTS088A Revised 6/27/2002 Features • 3.3V Input Voltage • 20-A Output Current • 4-Bit Programmable Output: 1.3V to 2.05V • High Efficiency (87%) • Differential Remote Sense • Over-Current Protection
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Original
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PT7712--3
SLTS088A
27-Pin
PT7744
PT7712
PT7711
PT7713
PT7714
PT7715
PT7744
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PDF
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CSR BC5
Abstract: 5150-5350MHz BRF6150 BRF6300 csr bc4 CSR BC4 bluetooth 2300-2690MHz BC5 CSR JIS K 5400 212B
Text: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the
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Untitled
Abstract: No abstract text available
Text: ADS7863 www.ti.com SBAS383E – JUNE 2007 – REVISED JANUARY 2011 Dual, 2MSPS, 12-Bit, 2 + 2 or 3 + 3 Channel, Simultaneous Sampling ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS7863 FEATURES DESCRIPTION • • • The ADS7863 is a dual, 12-bit, 2MSPS,
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ADS7863
SBAS383E
12-Bit,
ADS7861
ADS8361
ADS7863
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PDF
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MT47H128M8CF-25
Abstract: 8 resistor array 10k smd 103
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H128M8
MT47H64M16
18-compatible)
8192-cycle
09005aef840eff89
MT47H128M8CF-25
8 resistor array 10k smd 103
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PDF
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300V regulator
Abstract: PT7711 PT7712 PT7713 PT7714 PT7715 PT7745
Text: PT7711—5V 20-A Programmable Integrated Switching Regulator SLTS087A Revised 6/27/2002 Features • 5V Input Voltage • 20-A Output Current • 5-bit Programmable Output: 1.3V to 3.5V • High Efficiency (93%) • Differential Remote Sense • Over-Current Protection
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Original
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PT7711--5V
SLTS087A
27-Pin
PT7745
PT7711
300V regulator
PT7712
PT7713
PT7714
PT7715
PT7745
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PDF
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EBE10AD4AGFA-6E-E
Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization 128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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Original
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EBE10AD4AGFA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0107
E0865E11
EBE10AD4AGFA-6E-E
DDR2-400
DDR2-533
DDR2-667
EBE10AD4AGFA
EBE10AD4AGFA-4A-E
EBE10AD4AGFA-5C-E
E0865E11
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PDF
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DDR2-400
Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
Text: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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256MB
EBE25RC8AAFA
EBE25RC8AAFA
M01E0107
E0470E10
DDR2-400
DDR2-533
EBE25RC8AAFA-4C-E
EBE25RC8AAFA-5C-E
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PDF
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DDR2-533
Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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Original
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EBE10RD4ABFA
EBE10RD4ABFA
M01E0107
E0366E60
DDR2-533
EBE10RD4ABFA-4A-E
EBE10RD4ABFA-4C-E
EBE10RD4ABFA-5C-E
DDR2-400
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PDF
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DDR2-533
Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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EBE20RE4AAFA
EBE20RE4AAFA
M01E0107
E0440E20
DDR2-533
EBE20RE4AAFA-4A-E
EBE20RE4AAFA-5C-E
DDR2-400
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PDF
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EDE1104AASE
Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized
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Original
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EDE1104AASE
EDE1108AASE
EDE1104AA
EDE1108AA
68-ball
M01E0107
E0404E10
EDE1104AASE
EDE1104AASE-4A-E
EDE1104AASE-5C-E
EDE1104AASE-6C-E
EDE1108AASE
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PDF
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DDR2-400
Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AEFA 128M words x 72 bits, 2 Ranks Description Features The EBE11ED8AEFA is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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Original
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EBE11ED8AEFA
EBE11ED8AEFA
M01E0107
E0587E10
DDR2-400
DDR2-533
EBE11ED8AEFA-4A-E
EBE11ED8AEFA-5C-E
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H256M8
MT47H128M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef8441c566
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns
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V59C1512
32Mbit
16Mbit
DDR2-400
DDR2-533
DDR2-667
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns
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Original
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V59C1512
32Mbit
16Mbit
DDR2-400
DDR2-533
DDR2-667
DDR2-800
400MHz
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PDF
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MDR605C
Abstract: 2143MHz
Text: COMPONENTS FOR WIRELESS SOLUTIONS Multi-layered dielectric filter Frequency MHz P/N Dimensions(mm) Attenuation (dB) min I.L. (dB) min L W T 2.0 2.5 1.5 2.0 2.5 1.5 35 at 1420MHz MDR704F •*1 8 8 4 -1 9 2 0 Top PHS 1.2 10 at 1660MHz 30 at 1660MHz -y -f il
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OCR Scan
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1420MHz
MDR704F
1660MHz
MDR758F
MDR649E
MDR749F
MDR702F
MDR706F
MDR733F
MDR605C
2143MHz
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PDF
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