BAY135
Abstract: No abstract text available
Text: BAY135 Vishay Telefunken Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks
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BAY135
BAY135
D-74025
16-Feb-01
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i3 pin configuration diagram
Abstract: i3 pin configuration max 8724 CIRCUIT diagram flyback tv configuration TEA 8172
Text: TEA 8172 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2 A D Flyback current, peak to peak, I3 = 3 A D Thermal protection, Tj 140°C Case: 7 leads special plastic case Block diagram
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D-74025
i3 pin configuration diagram
i3 pin configuration
max 8724 CIRCUIT diagram
flyback tv configuration
TEA 8172
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ON 4173
Abstract: No abstract text available
Text: TDA 4173 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2.5 A D Flyback current, peak to peak, I3 = 4 A D Thermal protection, Tj 140°C Case: 7 leads special plastic case Block diagram
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88/540/EEC
91/690/EEC
ON 4173
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ON 4173
Abstract: telefunken rr 100 4173 diode i3 pin configuration ic tda for tv class d amplifier tda 4173 i3 pin configuration diagram I-512 flyback data pin diagram TDA4173
Text: TDA 4173 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2.5 A D Flyback current, peak to peak, I3 = 4 A D Thermal protection, Tj 140°C Case: 7 leads special plastic case Block diagram
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Original
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88/540/EEC
91/690/EEC
ON 4173
telefunken rr 100
4173 diode
i3 pin configuration
ic tda for tv
class d amplifier tda 4173
i3 pin configuration diagram
I-512
flyback data pin diagram
TDA4173
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PDF
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i3 pin configuration diagram
Abstract: 8172
Text: TEA 8172 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2 A D Flyback current, peak to peak, I3 = 3 A D Thermal protection, Tj 140°C Case: 7 leads special plastic case Block diagram
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Original
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D-74025
i3 pin configuration diagram
8172
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PDF
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by228
Abstract: BY228 Diode 86-004
Text: BY228/13.BY228/15 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits High voltage rectifier Efficiency diode in horizontal deflection circuits
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BY228/13
BY228/15
BY228/13
140design
D-74025
24-Jun-98
by228
BY228 Diode
86-004
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PDF
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by228
Abstract: BY228 Diode BY228 V
Text: BY228/13.BY228/15 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9588 Absolute Maximum Ratings Tj = 25_C
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BY228/13
BY228/15
BY228/13
D-74025
by228
BY228 Diode
BY228 V
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PDF
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BY228
Abstract: No abstract text available
Text: BY228/13.BY228/15 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9588 Absolute Maximum Ratings Tj = 25_C
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Original
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BY228/13
BY228/15
BY228/13
D-74025
27-Sep-00
BY228
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SF5400
Abstract: SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408
Text: SF5400.SF5408 Vishay Telefunken Super Fast Soft Recovery Rectifier Features D D D D Glass passivated Hermetically sealed axial leaded glass envelope Low reverse current High reverse voltage Applications Switched mode power supplies High–frequency inverter circuits
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SF5400.
SF5408
SF5400
SF5401
SF5402
SF5403
SF5404
SF5405
SF5406
SF5407
SF5400
SF5401
SF5402
SF5403
SF5404
SF5405
SF5406
SF5407
SF5408
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TLXR440
Abstract: E2258
Text: 17E D A TELEFUNKEN ELECTRONIC •¡niLItFlUlMKIMelectronic C r M ] t v e ‘fechrto*o$pe 4 ■ fiTSOOTb 000^140 0 ■ ALGÓ TLXR440. Extreme Bright Red LED 0 3 mm T1 in tinted diffused package Type Technology Red TLXR 440, GaAIAs on GaAs Angle of half intensity
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TLXR440.
TLXR440
E2258
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TRANSISTOR BC 136
Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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T-33-17
DIN125A
15A3DIN
TRANSISTOR BC 136
transistor BD 140
transistor bd 126
BD 140 transistor
16BD136
transistor bc 138
TRANSISTOR 138
TRANSISTOR BD 136
BD 139 transistor
transistor bd 711
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el-804
Abstract: telefunken s 150 el804
Text: M ,XSSWH*i”"' TELEFUNKEN lEL 8041 Parallelspeisung Breitband Endpentode M e ß - und Betriebswerte Ua 140 U g2 170 Rk 160 V Uf V lf 700 V mA Q la lg2 S 70 5 10 mA mA mA/V Ri 14 kQ l'-gilgi 9 U g , . lg , £ + 0 , 3 ^ - 1 ,3 6,3 V Kapazitäten Grenzwerte
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30407
Abstract: No abstract text available
Text: LUFTFAHRTRÖHRE LK 121 LIEFERER STABILOVOLTG.mbH. M etallstab ilisato r M STV 140/60 Z ANFOROERUNGSZEICHEN Ln 30407 V o rlä u fig e technische D aten 1. Abm essungen der Röhre m U a llit c h t r Ho!brn¡ ru fl* ie fi Kathode Anschlüsse von unten gegen die Röhre gesehen.
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el804
Abstract: RFK20 ufu6 el-804
Text: ¡lÄ £ S w'H,i”ns T E L E F U N K E N Parallelspeisung lEL 8041 B re itb a n d E n d p en tod e M eß- und Betriebswerte 140 170 160 Ua Ug 2 Rk la V V Q 70 mA 5 mA Ig2 S 10 m A /V Ri 14 kQ ^g2/gi U g ie Igi ^ 6,3 Uf U 700 V mA 9 + 0 , 3 ¿lA - 1 , 3
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6A1S
Abstract: DIN40040 T198N
Text: TELEFUNKEN ELECTRONIC T 198 N Ö1C D • fl'ìSOD'ib D0DL131 1 ■ AL£G Typenreihe/Type range_ T198N_200_ 400_ 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m . U rrm Periodische Vorwärts-und
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D00bl31
T198N
T198N
6A1S
DIN40040
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T210N
Abstract: 450C
Text: TELEFUNKEN E LECTRONIC Typenrelhe/Type range Ö1C i> _ T210N • Ô^SOO'ïb DDGblBb D ■ ALG6 1 7 ~ - 200 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drmiU rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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T210N
T210N
tc-100Â
1408C,
450C
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BY228
Abstract: BY228 V BY228 Diode BY-228
Text: T e m ic BY228/13.BY228/15 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits ci Absolute Maximum Ratings
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BY228/13
BY228/15
BY228/15
BY228
BY228 V
BY228 Diode
BY-228
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PDF
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jis s25c
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC fllC D Bi ä'lEDO'ib QOOblOfl b m t\LG G T 115 N Typenreihe/Type ränge T115N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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T115N
T115N
jis s25c
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T398N
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC fllC I> • * s'~ z 6 f i ^ O D U DQDbl77 3 »ALGfi X : T398N Typenrelhe/Type range_ T398N_ 200_400_ Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Üdrmi Urrm Periodische Vorwärts- und
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DQDbl77
T398N
T398N
45uerimpulsdauer/Pulse
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Untitled
Abstract: No abstract text available
Text: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage
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BAY135
18-Mar-99
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PDF
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Diode BAY 54
Abstract: No abstract text available
Text: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive
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Untitled
Abstract: No abstract text available
Text: BAY135_ Vishay Telefunken Silicon Planar Diode Features • Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 2 5 ° C Sym bol Value P e a k reverse voltage, non repetitive Param eter V RSM
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BAY135_
1-408-970pacitance
18-Mar-99
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26H4911
Abstract: S292P 51366SP
Text: VISHAY Vishay Telefunken Wafer Process Qualification Photo Detector Operating Life Test Description Device Type Duration Sample Size Failures Tamb = 25°C, V R = 5 V, IRA = 1.0 nA S292P 3 lots 2,000 h 150 Tamb = 100°C, V R = 5 V, IRA = 1.0 nA S292P 2,000 h
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S292P
S292P
H4898
26H4911
51366SP
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Untitled
Abstract: No abstract text available
Text: SF5400.SF5408 Vishay Telefunken Super Fast Soft Recovery Rectifier Features • G lass passivated • H erm etically sealed axial leaded glass enve lope • Low reverse current • High reverse voltage Applications 94 9588 Sw itched m ode pow er supplies
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OCR Scan
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SF5400.
SF5408
SF5400
SF5401
SF5402
SF5403
SF5404
SF5405
SF5406
SF5407
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