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    13MAY2010 Search Results

    13MAY2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIL-STD-750E

    Abstract: STRH100N10 STRH100N10FSY1
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened


    Original     		PDF STRH100N10 O-254AA MIL-STD-750E STRH100N10 STRH100N10FSY1

    ELECTRONIC BALLAST 150 W HID DIAGRAM

    Abstract: CBB21 schematic diagram Electronic Ballast HID cbb21 capacitor schematic diagram of energy saving lamps 25 watts 70W hid ballast CL21 capacitor 400v ne555 SMD TDK CT101 L6385E
    Text: AN2835 Application note 70 W HID lamp ballast based on the L6569, L6385E and L6562A Introduction This application note describes the electronic lamp ballast for 70 W high intensity discharge HID metal halide lamps (MHL) used for general indoor applications. The ballast is


    Original     		PDF AN2835 L6569, L6385E L6562A L6385E L6569 ELECTRONIC BALLAST 150 W HID DIAGRAM CBB21 schematic diagram Electronic Ballast HID cbb21 capacitor schematic diagram of energy saving lamps 25 watts 70W hid ballast CL21 capacitor 400v ne555 SMD TDK CT101

    NAND512R3A2D

    Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
    Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


    Original     		PDF NAND512xxA2D 512-Mbit, 528-byte/264-word TSOP48 VFBGA63 NAND512R3A2D NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    STM4639

    Abstract: No abstract text available
    Text: SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS ON 8.5 m Elektronische Bauelemente FEATURES     Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. ESD Protected. SOP-8 B PRODUCT SUMMARY


    Original     		PDF SSG4639STM STM4639 13-May-2010 STM4639

    video decoder webcam circuit diagram

    Abstract: RAW10 decoder webcam circuit diagram smia 65 camera module CAMERA SMIA STSMIA832 STSMIA832TBR CAMERA SMIA 85 SCHEMATIC webcam plane 1-21-74
    Text: STSMIA832 1.8 V / 2.8 V high speed dual differential line receivers, standard mobile imaging architecture SMIA decoder deserializer Features • Sub-low voltage differential signaling inputs: VID = 100 mV min. with RT = 100 Ω, CL = 10 pF ■ High signaling rate:


    Original     		PDF STSMIA832 TFBGA25 video decoder webcam circuit diagram RAW10 decoder webcam circuit diagram smia 65 camera module CAMERA SMIA STSMIA832 STSMIA832TBR CAMERA SMIA 85 SCHEMATIC webcam plane 1-21-74

    Untitled

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC AD ALL RIGHTS RESERVED. BY - NOTCH DESIGNATES ROW A 27.0 D REVISIONS DIST 00 P LTR DESCRIPTION APVD 22MAR2014 AP DD B REVISED PER ECO-14-004985 12MAY2014 LAW DD 2 FINISH:


    Original     		PDF ECO-14-004985 12MAY2014 UL94V-0 22MAR2014 ECO-14-002170 13MAY2010

    NAND512W3A2D

    Abstract: NAND512R3A2D
    Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


    Original     		PDF NAND512xxA2D 512-Mbit, 528-byte/264-word TSOP48 VFBGA63 NAND512W3A2D NAND512R3A2D

    Doc ID 17486 Rev 7

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N1 Doc ID 17486 Rev 7

    STRH100N10

    Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA STRH100y STRH100N10 STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH100N10 O-254AA SC30150 DocID17486

    a04l

    Abstract: 45-21UMC B54L
    Text: Technical Data Sheet Top View White LEDs 45-21UMC/XXXXXXX/TR8 Features ․Top View White LEDs ․Lead frame package with individual 2 pins ․Wide viewing angle ․Soldering methods: IR reflow soldering ․Pb-free ․The product itself will remain within RoHS compliant


    Original     		PDF 45-21UMC/XXXXXXX/TR8 45-21UMC/XX DSE-0000098 13-May-2010 a04l 45-21UMC B54L

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N10HY01

    Untitled

    Abstract: No abstract text available
    Text: R DiePlus Advantage SiliconBlue January 25, 2011 2.0.6 Data Sheet DiePlus Advantage is SiliconBlue’s focused program to provide designers with an optimal device mounting solution for mobile handheld applications. This data sheet provides detailed information regarding DiePlus


    Original     		PDF iCE65 iCE65L04 25-JAN-2011)

    74CB218ARTR

    Abstract: 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: U-09-01 Last Buy Deadline for Submission of Order: 13-May-2009


    Original     		PDF U-09-01 13-May-2009 13-May-2010 13-Aug-2010 DISCONTI74CB218R MK74CB218RTR MK74CB44R MK74CB44RTR MK74CG117BF MK5818SLFTR 74CB218ARTR 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened


    Original     		PDF STRH100N10 O-254AA O-254AA

    STRH100N10H

    Abstract: vd 5205
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N10 O-254AA STRH100N10HY1 STRH100N1 STRH100N10H vd 5205