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    13A 600V TO247 IGBT Search Results

    13A 600V TO247 IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    13A 600V TO247 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G*

    IC 7414 datasheet

    Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
    Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120BDF1 O-247 Collec059) IC 7414 datasheet IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60S

    T0-247

    Abstract: APT13GP120B igbt driver 600V 13A 600V TO247
    Text: APT13GP120B APT13GP120B TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120B O-247 T0-247 APT13GP120B igbt driver 600V 13A 600V TO247

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    65a3

    Abstract: APT13GP120B T0-247
    Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120B O-247 Collector-Em059) 65a3 APT13GP120B T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S switchin51

    transistor 7412

    Abstract: 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG
    Text: 1200V APT13GP120B_S G APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® B TO The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch


    Original     		PDF APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* transistor 7412 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG

    APT13GP120BSC

    Abstract: T0-247
    Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120BSC O-247 Col610) APT13GP120BSC T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G*

    IC 7446 A

    Abstract: ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1 APT13GP120BDQ1G 1200v 30A to247
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G* IC 7446 A ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1G 1200v 30A to247

    T5 transistor TO-247

    Abstract: IRG4PSC71K
    Text: PD - 91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		PDF 1683A IRG4PSC71K O-247 O-264, O-247, O-264 T5 transistor TO-247 IRG4PSC71K

    Untitled

    Abstract: No abstract text available
    Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol


    Original     		PDF 91683B IRG4PSC71K O-247 O-264, O-247, O-264 Super-247Â O-274AA O-274AA)

    transistor 58w

    Abstract: IRG4PSC71K
    Text: PD - 91683 IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		PDF IRG4PSC71K O-247 O-264, O-247, O-264 Super-247 transistor 58w IRG4PSC71K

    IRG4PSC71U

    Abstract: T5 transistor TO-247
    Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF 1681A IRG4PSC71U 40kHz 200kHz Super-247 O-247 IRG4PSC71U T5 transistor TO-247

    IRFPS37N50A

    Abstract: IRG4PSC71K
    Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol


    Original     		PDF 91683B IRG4PSC71K O-247 O-264, O-247, O-264 Super-247 O-274AA O-274AA) IRFPS37N50A IRG4PSC71K

    IRG4PSC71U

    Abstract: No abstract text available
    Text: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSC71U 40kHz 200kHz Super-247 O-247 Super-247 IRG4PSC71U

    APT44GA60B

    Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 APT44GA60B APT44GA60BD30 APT44GA60SD30 MIC4452 SD30

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    474J

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 474J

    APT44GA60BD30C

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C APT44GA60BD30C Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a