Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
MRF9100R3
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A113
Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF6S18060
MRF6S18060NR1/NBR1.
MRF6S18060MR1
MRF6S18060MBR1
MRF6S18060MR1
A113
A114
A115
C101
JESD22
MRF6S18060MBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P20180HR6
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MRF5S21130H
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21130H
MRF5S21130HR3
MRF5S21130HSR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110
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MRF5S21130/D
MRF5S21130
MRF5S21130R3
MRF5S21130S
MRF5S21130SR3
MRF5S21130SR3
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MRF5S21045N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with
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MRF5S19060N
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060MR1
MRF5S19060MBR1
MRF5S19060N
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FERRITE BEAD 1000 OHM 0805
Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010N
MW6S010NR1
MW6S010GNR1
FERRITE BEAD 1000 OHM 0805
A113
A114
A115
AN1955
C101
JESD22
MW6S010GNR1
CRCW12061001F100
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MRF6S21140HSR3
Abstract: J932
Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S21140HR3
MRF6S21140HSR3
J932
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TAJE226M035
Abstract: 200B103MW
Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P20180HR6
TAJE226M035
200B103MW
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A113
Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1
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MRF5S19060N/D
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060MR1
MRF5S19060MBR1
A113
AN1955
MRF5S19060MBR1
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J949
Abstract: rf t 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3
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MRF5S21130H/D
MRF5S21130HR3
MRF5S21130HSR3
MRF5S21130HR3
J949
rf t
465B
AN1955
MRF5S21130HSR3
MRF5S21130H
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF6S18060
MRF6S18060NR1/NBR1.
MRF6S18060MR1
MRF6S18060MBR1
MRF6S18060MR1
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MRF5S21045N
Abstract: No abstract text available
Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S21045
MRF5S21045NR1/NBR1.
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045MR1
MRF5S21045N
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IM324
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with
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MRF5S19060N
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060MR1
MRF5S19060MBR1
MRF5S19060N
IM324
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100LR3
MRF9100LSR3
MRF9100
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Transistor J182
Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100
MRF9100R3
MRF9100SR3
MRF9100
MRF9100R3
Transistor J182
MRF9100SR3
08053G105ZATEA
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TLX8-0300
Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies
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MRF18090A/D
MRF18090A
MRF18090AS
MRF18090A
TLX8-0300
"capacitor philips"
transistor motorola 114-8
motorola s 114-8
smd mosfet z8
smd z5 transistor
transistor motorola 351
465B
GSM1800
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MW6S010NR1
Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
A114
A115
AN1955
C101
JESD22
MW6S010
MW6S010GMR1
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MRF5S21130H
Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21130H
MRF5S21130HR3
MRF5S21130HSR3
MRF5S21130HR3
MRF5S21130H
465B
AN1955
MRF5S21130HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P20180HR6
MRF5P20180HR6
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A114
Abstract: AN1955 JESD22 MRF6S21140HR3 MRF6S21140HSR3 465B
Text: Freescale Semiconductor Technical Data MRF6S21140H/D Rev. 1, 11/2004 The RF MOSFET Line RF Power Field Effect Transistors MRF6S21140HR3 MRF6S21140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110
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MRF6S21140H/D
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140HR3
A114
AN1955
JESD22
MRF6S21140HSR3
465B
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J182 transistor
Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100R3
MRF9100SR3
MRF9100R3
J182 transistor
J152 mosfet transistor
MRF9100
MRF9100SR3
Transistor J182
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100B220GW
Abstract: 100B100GW
Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100R3
MRF9100SR3
100B220GW
100B100GW
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