OPB0462
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃
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OPB0462
135um
500uA
OPB0462
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Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics
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OPB0462
135um
500uA
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9451 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage
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OPA9451
100mA
135um
--------------------11mil
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OPA9441F
Abstract: No abstract text available
Text: Infrared LED Chip OPA9441F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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OPA9441F
100mA
135um
--------------------------11mx
--------------------------11mil
OPA9441F
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PDF
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OPA9451
Abstract: No abstract text available
Text: Infrared LED Chip OPA9451 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage
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Original
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OPA9451
100mA
135um
11mil
OPA9451
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PDF
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9441F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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Original
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OPA9441F
100mA
135um
--------------------------11mil
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PDF
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