1351 TRANSISTOR Search Results

1351 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1351 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LT1351 Abstract: LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower	Original	LT1351 LT1351 254mm) LT1352/LT1353 LT1354 12MHz, LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351	PDF
1351 NPN TRANSISTOR Abstract: LT1351 LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29 Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower	Original	LT1351 LT1351 ch351 LTC201 2000pF 20nA/2000pF 10mV/ms 8pC/2000pF 1351 NPN TRANSISTOR LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29	PDF
Untitled Abstract: No abstract text available Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower	Original	LT1351 LT1351 LTC201 2000pF 20nA/2000pF 10mV/ms 8pC/2000pF LT1352/LT1353	PDF
Untitled Abstract: No abstract text available Text: MSB1218A-RT1 Preferred Device PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−70/SOT−323 package which is designed for low power surface	Original	MSB1218A-RT1 SC-70/SOT-323 7-inch/3000 SC-70 OT-3230)	PDF
Untitled Abstract: No abstract text available Text: LT1351 r j u n e TECH NO LO G Y 250\|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable	OCR Scan	LT1351 00V/p LT1351 152mm) 254mm) LT1352/LT1353 LT1354 250nA, 00V/ps 12MHz,	PDF
780cb Abstract: A138-00 1351F Text: PDA REFERENCE DESIGN Evaluation Kit Hardware Manual Contents Introduction. 334 Specification.	OCR Scan	RS232 Jul94 780cb A138-00 1351F	PDF
ST25C Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	00DRS51 flBES100 VB-12SV ST25C st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI	PDF
Untitled Abstract: No abstract text available Text: r r u r LT135.1 m TECHNOLOGY 250\|liA, 3MHz, 200V/fis Operational Amplifier F€ATUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/jas Slew Rate ■ 250\|oA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor	OCR Scan	LT135 00V/fis 00V/jas LT1351 110pF 1N4148 SST177 551fl4bA LT1351 20nA/2000pF	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771	PDF
Untitled Abstract: No abstract text available Text: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s	OCR Scan	OPI150TX OPI150TX, OPI150TXV MIL-PRF-19500 00Q31ba	PDF
MPSA20 transistor Abstract: MPS-A20 Text: Silicon r - - j Ief= I r^ j Transistors M PS-A 20 The MPS-A20 is a silicon planar epitaxial passivated NPN transistor, designed for general purpose am plifier applications. i_ L T J a b s o lu te m a x im u m ratings: VCEO VCBO VEB q SEATING PLANE V olts	OCR Scan	MPS-A20 MPS-A20 MPSA20 transistor	PDF
Untitled Abstract: No abstract text available Text: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/\|as O p eration al Am plifier F€RTUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/\|as Slew Rate ■ 250,uA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate	OCR Scan	LT1351 250nA, LT1351 20nA/2000pF 10mV/ms 8pC/2000pF LT1352/LT1353 00V/ns LT1354	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz OT-323 Q62702-F1490	PDF
OP235TX Abstract: OP235TXV OP804TX OP804TXV OPI150TX OPI150TXV Text: 0 P roduct B ulletin OPI150TX Septem ber 1996 OPIEK Optically Coupled Isolators Types OPI15QTX, OPI150TXV • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s	OCR Scan	OPI150TX OPI150TX, OPI150TXV MIL-PRF-19500 OPI150TXV OP235TX OP235TXV) OP804TX OP804TXV) OP235TXV OP804TXV	PDF

PHC2300 Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221	OCR Scan	2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT	PDF
CBC 184 transistor Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731 Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	175MHz, 700MHz, 7c-25 /-700MHz, 2SA83B CBC 184 transistor CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731	PDF
transistor ac 132 Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019 Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •\|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed	OCR Scan	jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor ac 132 MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic fla3019	PDF
Untitled Abstract: No abstract text available Text: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/jas O p e ra tio n a l A m p lifie r F€RTUR€S D C S C R IP TIO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250\|jA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate	OCR Scan	LT1351 250nA, 00V/jas LT1351 20nA/2000pF 10mV/ms 8pC/2000pF LT1352/LT1353 LT1354	PDF
transistor smd 12p Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band	OCR Scan	711002b BLT81 OT223 MSC092 MRCQ89 transistor smd 12p transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor transistor ft 960 smd 12p	PDF
transistor BC 245 Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126 Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time	OCR Scan	00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126	PDF
A3018 Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126 Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •\|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed	OCR Scan	jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126	PDF
Untitled Abstract: No abstract text available Text: / T L in t A B ^ > 7 LT1351 TECHNOLOGY 250\|iA, 3MHz, 200V/^s O p era tional A m plifier FCRTUR6S DCSCAIPTIOn • 3MHz Gain Bandwidth ■ 200V/jos Slew Rate ■ 250\|iA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor	OCR Scan	LT1351 00V/jos LT1351 254mm) LT1352/LT1353 00V/hs LT1354 12MHz, 00V/jisQ 551fl4bfl	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL 6N135, 6N136 DATA GaA€As IRDE & PHOTO IC 6N135 DIGITAL LOGIC ISOLATION. U nit in mm LINE RECEIVER. POWER SUPPLY CONTROL 8 SWITCHING POWER SUPPLY ,‘t i 7 rr3 6 5 ti rr 3 4 TRANSISTOR INVERTER. 1 2 The TOSHIBA 6N135 and 6N136 consists of a high em itting diode	OCR Scan	6N135, 6N136 6N135) 6N135 6N136 2500Vrms TLP550 UL1577, E67349	PDF
2N7222 Abstract: No abstract text available Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ;n N-CHANNEL IRFM440 SN7SS8 JANTX8N7SS8 JANTXV8N7SSS [REF: MIL-S-10BOO/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International	OCR Scan	IRFM440 MIL-S-10BOO/596] IRFM440D IRFM440U O-254 MIL-S-19500 I-356 2N7222	PDF

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1351 TRANSISTOR Search Results

1351 TRANSISTOR Result Highlights (5)

1351 TRANSISTOR Datasheets Context Search

LT1351

1351 NPN TRANSISTOR

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780cb

ST25C

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MPSA20 transistor

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OP235TX

PHC2300

CBC 184 transistor

transistor ac 132

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transistor smd 12p

transistor BC 245

A3018

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2N7222