Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1350 TRANSISTOR Search Results

    1350 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1350 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1450 transistor

    Abstract: 1350 transistor 1314AB60
    Text: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This


    Original     		PDF 052699-PHAN 1314AB60 1314AB60 250mA. 1450 transistor 1350 transistor

    BC52

    Abstract: No abstract text available
    Text: Medium power general purpose transistors NPN medium power general purpose transistors SOT223 SC-73 SOT89 (SC-62) DFN2020-3 (SOT1061) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.0 x 2.0 x 0.65 1350 1350 1100 Package M3D109 Size (mm) Ptot (mW) Polarity NPN VCEO (V)


    Original     		PDF OT223 SC-73) SC-62) DFN2020-3 OT1061) M3D109 BCP68 BC868 BC68PA BC68-25PA BC52

    transistor 1850

    Abstract: No abstract text available
    Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB transistor 1850

    Untitled

    Abstract: No abstract text available
    Text: Model 511065 COAXIAL RESONATOR OSCILLATOR 1350 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W  Gain 6.0 dB min.  Silicon Nitride Passivated


    Original     		PDF PTB20156B PTB20156B

    MSC72166

    Abstract: 400X
    Text: MSC72166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC72166 is Designed for High Power Pulsed IFF Avionics Applications. PACKAGE STYLE .400X.500 COMMON BASE MAXIMUM RATINGS IC 40 A VCC 50 V PDISS 1350 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C


    Original     		PDF MSC72166 MSC72166 400X

    MRF157

    Abstract: No abstract text available
    Text: MRF157 POWER FIELD EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE .900 2L SQ The ASI MRF157 is an Enhancement-Mode N-Channel MOS designed for linear large-signal output stages to 80 MHz. MAXIMUM RATINGS ID 60 Adc VDSS 125 V VDGO 125 V VGS ±40 V PDISS 1350 W @ TC = 25 °C


    Original     		PDF MRF157 MRF157

    5v dpdt relay

    Abstract: 10A relay 9 Volt DPDT Relay tyco mil relay relay studs
    Text: 1350 Series AC Voltage Level Sensor, Relay Output Product Facts • ■ ■ Standard models combine AC 400 Hz. voltage-sensing circuit with 2A DPDT output relay. Various applications ■ Motor protection ■ Ground support equipment ■ Low or high line alarms


    Original     		PDF 150Vac 5v dpdt relay 10A relay 9 Volt DPDT Relay tyco mil relay relay studs

    f541m43b

    Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed


    Original     		PDF ATF-541M4 ATF-541M4 5988-9004EN f541m43b 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34

    TRANSISTOR W25

    Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with


    Original     		PDF ATF-541M4 ATF-551M4, ATF-54143 SC-70 ATF-541M4) 5988-9004EN TRANSISTOR W25 TL39 Phycomp TL42 TL34 ATF-54143 ATF-551M4 BCV62 w21 transistor

    Untitled

    Abstract: No abstract text available
    Text: 1350 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF

    SEMICONDUCTOR J598

    Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT

    SEMICONDUCTOR J598

    Abstract: j598 ATC800B0R8BT500XT ATC800B J739
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739

    transistors BC 458

    Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3

    J717

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 J717

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S21150HR3 MRF7S21150HSR3 J239 J508 Vishay capacitor axial
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 A114 A115 AN1955 C101 JESD22 MRF7S21150HSR3 J239 J508 Vishay capacitor axial

    philips power transistor bd139

    Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
    Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors


    Original     		PDF AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		PDF NGTB40N135IHRWG NGTB40N135IHR/D

    RF POWER TRANSISTOR NPN

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    schematic diagram ac 150 kva generator

    Abstract: SAMI Star LTV 236 wq Circuit Diagram of Fan Speed Control with potenti ALLEN-BRADLEY POTENTIOMETER 81E intel 8085 microprocessor stromberg 800 kva inverter circuit diagrams SEMICONDUCTORS GENERAL CATALOG TRANSISTORS THYRISTORS DIODES LEDS Diode Thyristor 800 kva inverter diagrams
    Text: Aiien-Bradiey Bulletin 1350 Adjustable Frequency AC Motor Drives by Stromberg Instruction and Maintenance Manual For Bulletin 1350 Non-Regenerative Drive sizes: 50 KVA to 1000 KVA @ 460V AC 58 KVA to 1340 KVA @ 575V AC TABLE OF CONTENTS SECTION LIST OF TITLE


    OCR Scan     		PDF

    N4050

    Abstract: 1350 transistor
    Text: ERICSSON $ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Preliminary Key Features Description • • • • • The 20156 is a class C, NPN, common base RF PowerTransistor intended for 22 VDC operation across the 1350 -1850 MHz frequency band. It is rated at 8 Watts minimum output power


    OCR Scan     		PDF

    AY-3-1350

    Abstract: chime circuit musical door bell Top Octave Synthesizer GENERAL INSTRUMENT ay-3-1350 musical bell chime hallelujah
    Text: .INIKAI IN SIK lJM f NI AY-3-1350 Tunes Synthesizer FEATURES • 25 D ifferent Tunes Plus 3 Chimes ■ Mask Program m able w ith C ustom er Specified Tunes fo r Toys, Musical Boxes, etc. ■ M inimal External C om ponents ■ Autom atic S w itch-O ff Signal at End o f Tune fo r Power Savings


    OCR Scan     		PDF AY-3-1350 AY-3-1350 chime circuit musical door bell Top Octave Synthesizer GENERAL INSTRUMENT ay-3-1350 musical bell chime hallelujah

    AY-3-1350

    Abstract: chime circuit GENERAL INSTRUMENT ay-3-1350 musical door bell musical bell jingle circuit diagram of split ac door bell hallelujah 1760Hz
    Text: AY-3-1350 Tunes Synthesizer FEATURES PIN C O N FIG U R A TIO N • 25 D ifferent Tunes Pius 3 Chimes ■ Mask Program m able w ith C ustom er Specified Tunes fo r Toys, M usical Boxes, etc. ■ M inim al External C om ponents ■ A utom atic S w itch-O ff Signal at End o f Tune fo r Power Savings


    OCR Scan     		PDF AY-3-1350 AY-3-1350 -2000//f 22/jf chime circuit GENERAL INSTRUMENT ay-3-1350 musical door bell musical bell jingle circuit diagram of split ac door bell hallelujah 1760Hz