CPM2A-BAT01
Abstract: omron relay c200h-cn320-eu C200H-CN229-EU cpm1a cable plc omron CPM2A DB9 omron CPM2C-BAT01 CPM1A-20EDR1 CPM2A programming cable
Text: 1331-2012.qxp:QuarkCatalogTempNew 9/5/12 10:02 AM Page 1331 15 Micro Programmable Controllers The CPM1A Series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and
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CPM1A-20CDR-A-V1
CPM1A-10CDR-A-V1
Availabl42
CPM2C-PA201
CPM2C-TS001
CPM2C-BAT01
CS1W-CN226
C200H-CN510-EU
C200H-CN320-EU
C200H-CN520-EU
CPM2A-BAT01
omron relay
C200H-CN229-EU
cpm1a cable
plc omron CPM2A
DB9 omron
CPM1A-20EDR1
CPM2A programming cable
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Untitled
Abstract: No abstract text available
Text: 19-1331; Rev 1; 6/98 KIT ATION EVALU E L B A IL AVA Upstream CATV Driver Amplifier _Features The MAX3532 is a programmable power amplifier for use in upstream cable applications. The device outputs up to 62dBmV continuous wave through a 1:2 (voltage
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62dBmV,
350mW
MAX3532
62dBmV
36dBmV
42MHz.
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planar transformer theory
Abstract: SPM12535T-R60M220 P820 AN1331 LM5033 1331 SMD P8208 zener 13v smd AN-1331 C4532X7R1H685M
Text: National Semiconductor Application Note 1331 Dennis Morgan May 2004 Introduction • Size: 2.3 x 1.45 x 0.43 in. 1⁄4 brick footprint The printed circuit board consists of 4 layers of 2 oz copper on FR4 material, with a thickness of 0.050 in. It is designed
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LM5033EVAL
planar transformer theory
SPM12535T-R60M220
P820
AN1331
LM5033
1331 SMD
P8208
zener 13v smd
AN-1331
C4532X7R1H685M
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ups D6-11
Abstract: MAX3532 MAX3532EAX 55dBmV
Text: 19-1331; Rev 1; 6/98 KIT ATION EVALU E L B A IL AVA Upstream CATV Driver Amplifier _Features The MAX3532 is a programmable power amplifier for use in upstream cable applications. The device outputs up to 62dBmV continuous wave through a 1:2 (voltage
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MAX3532
62dBmV
36dBmV
42MHz.
MAX3532
ups D6-11
MAX3532EAX
55dBmV
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smd transistor t1A
Abstract: lm5033
Text: User's Guide SNVA091A – May 2004 – Revised May 2013 AN-1331 LM5033 Evaluation Board 1 Introduction The LM5033EVAL evaluation board provides the design engineer with a fully functional intermediate bus converter IBC employing a half-bridge topology. Configured as an IBC, the circuit operates open loop,
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SNVA091A
AN-1331
LM5033
LM5033EVAL
smd transistor t1A
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MAX3532
Abstract: MAX3532EAX
Text: 19-1331; Rev 1; 6/98 KIT ATION EVALU E L B A IL AVA Upstream CATV Driver Amplifier _Features The MAX3532 is a programmable power amplifier for use in upstream cable applications. The device outputs up to 62dBmV continuous wave through a 1:2 (voltage
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MAX3532
62dBmV
36dBmV
42MHz.
MAX3532
MAX3532EAX
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CMOS differential amplifier cascode
Abstract: folded cascode op amp open loop gain high end amplifier schematics folded cascode second stage folded cascode current mirror op amp folded cascode rail to rail op amp AN13310 class A push pull power amplifier EL5157 Q7-Q10
Text: Avoiding Instability in Rail-to-Rail CMOS Amplifiers Application Note January 2, 2008 AN1331.0 FIGURE 1. VOLTAGE FEEDBACK AMPLIFIER Introduction Voltage Feedback Amplifier The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago.
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AN1331
CMOS differential amplifier cascode
folded cascode op amp open loop gain
high end amplifier schematics
folded cascode second stage
folded cascode current mirror op amp
folded cascode rail to rail op amp
AN13310
class A push pull power amplifier
EL5157
Q7-Q10
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metal film resistors Hitano
Abstract: L 3005 TRANSISTOR transistor 3005 2
Text: Fusible Metal Film Resistors FEATURES DIMENSION Suitably used in transistor protection circult. Small in size with competitive price. Noncombustible insulating coat, "Freon" Proof and resistent to high temperature. Low temperature coefficient, under ±200 PPM/ºC .
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FUR025
FUR050S
FUR100S
FUR200S
FUR300S
1000hrs
500hrs
metal film resistors Hitano
L 3005 TRANSISTOR
transistor 3005 2
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FUR100S
Abstract: megger hitano D transistor sEC transistor 9005 metal film resistors Hitano
Text: Fusible Metal Film Resistors FEATURES DIMENSION Suitably used in transistor protection circult. Small in size with competitive price. Noncombustible insulating coat, "Freon" Proof and resistent to high temperature. Low temperature coefficient, under ±200 PPM/ºC .
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FUR-025
FUR-100S
FUR-200S
FUR-300S
1000hrs
500hrs
FUR100S
megger
hitano
D transistor sEC
transistor 9005
metal film resistors Hitano
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MAX3271
Abstract: MAX3272 MAX3272EGP MAX3873
Text: 19-2269; Rev 0; 01/02 +3.3V, 2.5Gbps Low-Power Limiting Amplifier Features ♦ Single +3.3V Power Supply The MAX3272 features current-mode logic CML data outputs that are tolerant of inductive connectors, and is available in a 4mm ✕ 4mm QFN package or in die form.
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MAX3272
MAX3271,
20-Pin
MAX3272
MAX3271
MAX3272EGP
MAX3873
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Untitled
Abstract: No abstract text available
Text: 19-2269; Rev 0; 01/02 +3.3V, 2.5Gbps Low-Power Limiting Amplifier Features ♦ Single +3.3V Power Supply The MAX3272 features current-mode logic CML data outputs that are tolerant of inductive connectors, and is available in a 4mm ✕ 4mm QFN package or in die form.
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MAX3272
MAX3272
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MAX3271
Abstract: MAX3272 MAX3272A MAX3272AEGP MAX3272EGP MAX3873
Text: 19-2269; Rev 1; 1/03 KIT ATION EVALU E L B AVAILA +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features ♦ Single +3.3V Power Supply ♦ 33mA Supply Current ♦ 5ps Deterministic Jitter ♦ 90ps Edge Speed ♦ Output Squelch Function ♦ Programmable Loss-of-Signal Function
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20-Pin
MAX3272EGP
MAX3272AEGP
MAX3272E/D
AX3272/MAX3272A
MAX3271
MAX3272
MAX3272A
MAX3272AEGP
MAX3272EGP
MAX3873
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Untitled
Abstract: No abstract text available
Text: 19-2269; Rev 3; 11/04 KIT ATION EVALU E L B A AVAIL +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features The MAX3272/MAX3272A 2.5Gbps limiting amplifiers accept a wide range of input voltages and provide a constant-level output voltage with controlled edge
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MAX3272/MAX3272A
MAX3272/MAX3272A
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MAX3271
Abstract: MAX3272 MAX3272AEGP MAX3272AETP MAX3272EGP
Text: 19-2269; Rev 3; 11/04 KIT ATION EVALU E L B A AVAIL +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features The MAX3272/MAX3272A 2.5Gbps limiting amplifiers accept a wide range of input voltages and provide a constant-level output voltage with controlled edge
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MAX3272/MAX3272A
MAX3272/MAX3272A
MAX3271
MAX3272
MAX3272AEGP
MAX3272AETP
MAX3272EGP
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POWER TRANSISTOR MPSW45
Abstract: 1334 On
Text: ON Semiconductort MPSW45 MPSW45A* One Watt Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW45 MPSW45A Unit Collector −Emitter Voltage VCES 40 50 Vdc Collector −Base Voltage VCBO 50 60 Vdc Emitter −Base Voltage
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MPSW45
MPSW45A
MPSW45A*
O-226AE)
POWER TRANSISTOR MPSW45
1334 On
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ALLEN-BRADLEY bulletin 1331
Abstract: ALLEN-BRADLEY POTENTIOMETER Pasi relays ALLEN-BRADLEY potentiometers Allen-Bradley ip20 Allen-Bradley DIGITAL INPUT AAF05 ALLEN-BRADLEY POTENTIOMETER j type westinghouse breaker fb Westinghouse motor control centers
Text: In stru ctio n M anual A llen-Bradley B ulletin 1331 Single P h ase Adjustable F requency AC Drive 0.37 - 1.5 KW {* -2 HP Series C IMPORTANT USIîlt INFORMATION r e p a ir o r ummxcHAme noceomis 1 ni-INSTALLATION 2 DRIVE A N D OPTION tOCNTIftCA TtON 3 m a n c A r io N s
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pag114
pag141
MS-44Â
sj092
ALLEN-BRADLEY bulletin 1331
ALLEN-BRADLEY POTENTIOMETER
Pasi relays
ALLEN-BRADLEY potentiometers
Allen-Bradley ip20
Allen-Bradley DIGITAL INPUT
AAF05
ALLEN-BRADLEY POTENTIOMETER j type
westinghouse breaker fb
Westinghouse motor control centers
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8041b
Abstract: No abstract text available
Text: 19-1331; R ev 1; 6/9 8 EV m o t i o n wt y k i y j x i v M Features _G e n e r a l D e s c r i p t i o n The MAX3532 is a program m able pow er am plifier for use in upstream cable applications. The device outputs up to 62dBmV continuous wave through a 1 :2 (voltage
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MAX3532
62dBmV
36dBmV
42MHz.
8041b
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inhalt liste
Abstract: No abstract text available
Text: SIEMENS Inhalt Inhaltsverzeichnis Table of Contents Seite Content Page Typenübersicht Selection Guide SIPMOS-Leistungstransistoren.9 IGBT-Transistoren. 12 FRED Schnelle Dioden.13 SIPMOS Power Transistors.9
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2SD2007
Abstract: 2SB1331
Text: h 7 > y 7. $ / I ransistors 2SD2007 2SD2007 1 1 T V j\ s - - y %NPN > U =l> h -7> y 7 ,$ Epitaxial Planar NPN Silicon Transistor * m * > * lílf f l/M e d iu m Power Amp. • • ÿi-ffi^üO /D im ensions Unit : mm) 1) Ic m = 2 .5 A P c = 1 .2 W <r)±&t>o
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2SD2007
2SD2007
2SB1331
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Untitled
Abstract: No abstract text available
Text: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage
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SML50G60BN
SML50G50BN
SML50G60/50G50BN
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transistor marking R2s
Abstract: AMI siemens BFR93AW k150t
Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1489
OT-323
900MHz
transistor marking R2s
AMI siemens
BFR93AW
k150t
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G12011
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies SMPS , motor control,
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PHD12N10E
OT428
G12011
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transistor k 911
Abstract: No abstract text available
Text: PhHip^emiconductore H 711002b QDbTBbl STA M P H I N ^^Produc^pecification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems,
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711002b
BFT93
BFR93
BFR93A.
transistor k 911
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TAG 8907
Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Text: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in
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711005b
BFT93
BFR93
BFR93A.
TAG 8907
lc 945 p transistor
BFT93
1348 transistor
B 1446 transistor
B 1449 transistor
2F PNP SOT23
lc 945 transistor
SiS 671
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