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    1302N Search Results

    1302N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSS7331-302NLB Coilcraft Inc General Purpose Inductor, 3uH, 30%, Ferrite-Core, 2929, Visit Coilcraft Inc
    MSS7331-302NL Coilcraft Inc Power inductor, shielded, 20/30% tol, SMT, RoHS Visit Coilcraft Inc
    MSS7331-302NLC Coilcraft Inc General Purpose Inductor, 3uH, 30%, Ferrite-Core, 2929, Visit Coilcraft Inc
    6P41302NDGI Renesas Electronics Corporation 8-Output PCIe Gen1-2-3 Clock Generator for Freescale Systems Visit Renesas Electronics Corporation
    6P41302NDGI8 Renesas Electronics Corporation 8-Output PCIe Gen1-2-3 Clock Generator for Freescale Systems Visit Renesas Electronics Corporation
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    1302N Price and Stock

    Pulse Electronics Corporation H1302NL

    XFRMR MAGNETIC 1PORT 1:1 10/100
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    DigiKey H1302NL Tube 560 1
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    Mouser Electronics H1302NL 611
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    Newark H1302NL Bulk 560
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    Bristol Electronics H1302NL 29
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    Avnet Abacus H1302NL 21 Weeks 560
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    Chip One Stop H1302NL Tube 38
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    Maxim Integrated Products DS1302N-

    IC RTC CLK/CALENDAR SER 8DIP
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    DigiKey DS1302N- Tube 399 1
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    OMRON Industrial Automation D4A-1302N

    SWITCH SNAP ACTION SPDT 10A 125V
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    DigiKey D4A-1302N Bulk 12 1
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    Newark D4A-1302N Bulk 1
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    Renesas Electronics Corporation 6P41302NDGI8

    IC CLK GEN LP LV PCIE 48QFN
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    E-Switch Inc KC15A13.02NPS

    SWITCH ROTARY 5POS 350MA 125V
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    DigiKey KC15A13.02NPS Bulk 500
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    1302N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


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    10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


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    10Gb/s EML10WCB EML10WCB STM-64/OC-192 100GHz 709Gb/s, EML10 21CFR ISO14001 TL9000 PDF

    LC25W

    Abstract: LC25WZB 1510nm laser diode LC25Wz GR-468-CORE LC25WZCA-J28 laser diode submount
    Text: Data Sheet 2.5Gb/s Buried Het Laser non-WDM applications LC25WZ This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in 2.5Gb/s long distance single channel optical fiber systems. The device is packaged in a


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    LC25WZ 14-pin 175km 1510nm ISO14001 TL9000 ISO9001 FM15040 BH13091 LC25W LC25WZB 1510nm laser diode LC25Wz GR-468-CORE LC25WZCA-J28 laser diode submount PDF

    laser chirp parameter

    Abstract: 2 Wavelength Laser Diode DFB wavelength locker LC25W-B etalon locker LC25 LC25W laser "chirp parameter" DR1670 LC25EW
    Text: Data Sheet 2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization LC25W-B 360km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division


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    360km LC25W-B 360km) 14-pin 1510nm ISO14001 TL9000 ISO9001 FM15040 BH13087 laser chirp parameter 2 Wavelength Laser Diode DFB wavelength locker LC25W-B etalon locker LC25 LC25W laser "chirp parameter" DR1670 LC25EW PDF

    dfb activation energy

    Abstract: TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11
    Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


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    10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, 21CFR ISO14001 TL9000 ISO9001 dfb activation energy TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11 PDF

    TR-NWT-000870

    Abstract: 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original
    10Gb/s EML10WCA EML10 STM-64/OC-192 100GHz 953Gb/s, 21CFR ISO14001 TL9000 TR-NWT-000870 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11 PDF

    LC25W-A

    Abstract: bookham lc25 1996 direct pm modulation circuit LC25 LC25W LC25EW bookham dr1670
    Text: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division


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    175km LC25W-A 175km) 14-pin 1510nm ISO14001 TL9000 ISO9001 FM15040 BH13088 LC25W-A bookham lc25 1996 direct pm modulation circuit LC25 LC25W LC25EW bookham dr1670 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division


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    175km LC25W-A 175km) 14-pin 1510nm BH13088 PDF

    bookham dr1670

    Abstract: No abstract text available
    Text: Data Sheet 2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization LC25W-B 360km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division


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    360km LC25W-B 360km) 14-pin 1510nm BH13087 bookham dr1670 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original
    10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    Diode BFM

    Abstract: TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original
    10Gb/s EML10WCA EML10 STM-64/OC-192 100GHz 953Gb/s, TL9000 ISO9001 FM15040 Diode BFM TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator PDF

    dfb activation energy

    Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original
    10Gb/s EML10WCB EML10WCB STM-64/OC-192 100GHz 953Gb/s, EML10 21CFR ISO14001 TL9000 dfb activation energy 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML11 GR-468 Diode BFM PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


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    P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


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    10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    1510nm laser diode

    Abstract: No abstract text available
    Text: Data Sheet 2.5Gb/s Buried Het Laser non-WDM applications LC25WZ This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in 2.5Gb/s long distance single channel optical fiber systems. The device is packaged in a


    Original
    LC25WZ 14-pin 175km 1510nm TL9000 ISO9001 FM15040 ISO14001 EMS35100 BH13091 1510nm laser diode PDF

    bookham tunable LASER

    Abstract: Bookham LC25FT Bookham Technology tuneable LC25FT transistor 1547 b GR-468-CORE Bookham Technology tl
    Text: Preliminary Data sheet Preliminary 2.5Gb/s Buried Het 8x50GHz Tunable Laser LC25FT This laser module employs the Bookham Technology gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed WDM 2.5Gb/s long distance optical


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    8x50GHz LC25FT 14-pin 50GHz TL9000 ISO9001 FM15040 ISO14001 EMS35100 bookham tunable LASER Bookham LC25FT Bookham Technology tuneable LC25FT transistor 1547 b GR-468-CORE Bookham Technology tl PDF

    Untitled

    Abstract: No abstract text available
    Text: NOTES: UNLESS OTHERWISE SPECIFIED NOTICE: THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. RoHS-6 ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. @ Pulse v/ 2. 1302NL 4. PLASTIC: THERMOSET PLASTIC MATERIAL WITH FLAMMABILITY RATING UL 94V—0 OR BETTER.


    OCR Scan
    H1302NL -003A 1302N PDF

    Untitled

    Abstract: No abstract text available
    Text: fc' Pulse Electronics www.pulseelectronics.com NOTES: U N L E SS OTHERW ISE SPECIFIED ññññññññ 1. NOTICE: R o H S -6 s/ @ Pulse THIS IS A R oH S COMPLIANT COM PONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIO R APPRO VAL BY THE DESIGN CENTER.


    OCR Scan
    HX1302NL 1302N S-2005 001-D PDF