13005 ST Search Results

tr 13005

Abstract: transistor 13005 CIRCUIT transistor 13005 13005 13005 equivalent 13005 TRANSISTOR KSE13004 KSE13005 PC 13005 TRANSISTOR TR 13005 transistor
Contextual Info: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

13005 TRANSISTOR

Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte
Contextual Info: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

MJE13004

Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
Contextual Info: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

13005 A transistor

Abstract: TR 13005 transistor npn silicon transistor 13005 application 13005 TRANSISTOR transistor+13005
Contextual Info: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

E13005

Abstract: e13005 2 transistor E13005 E13005 fairchild E13005 transistor e13005- 2 E13005 -2 npn silicon transistor 13005 application note 13005 datasheet E13005 transistor
Contextual Info: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

EB 13005

Abstract: transistor 13005 CIRCUIT
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Sym bol : KSE13004 Rating VcBO : KSE13005

transistor 13005

Abstract: npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st
Contextual Info: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

TR 13005 transistor

Abstract: 13005 2 transistor
Contextual Info: KSM13004/13005 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

transistor 13005 CIRCUIT

Abstract: 13005 2 transistor transistor 13005 13005 TRANSISTOR KSE13005 npn silicon transistor 13005 application note 13005 npn npn silicon transistor 13005 application KSE13004 13005 A
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage : KSE13004

13005

Abstract: ST-13005 tr 13005 13005 equivalent npn silicon transistor 13005 application note
Contextual Info: ST 13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /

13005 2 transistor

Abstract: EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005
Contextual Info: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable lor Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage: KSE13004

13005 2 transistor

Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage

tr 13005

Abstract: IC regulator 13005 transistor 13005 13005 A ST-13005 transistor 13005 CIRCUIT 13005 st
Contextual Info: ST 13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /

SC-0351

Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005
Contextual Info: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

13005 2 transistor

Abstract: TRANSISTOR 13005 13005 TRANSISTOR npn silicon transistor 13005 application 13005 NPN Transistor 13005 13005 npn 13005 A KSE13004 KSE13005
Contextual Info: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol :K S E 1 3 0 0 4 V cB O : KSE13005

13005 2 transistor

Abstract: transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • H igh S p eed Sw itching • Suitable for Sw itching Regulator and M otor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C o lle cto r Base Voltage : K S E 13004

13005 ballast

Abstract: 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications
Contextual Info: Î- 1 TELEFUNKEN ELECTRONIC 17E D • fi^aODTb DGCHbaS 0 TE 13004 TE 13005 electronic Creative "fe c h n o to g « T-33MI Silicon NPN Power Transistors A p p lications; Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

13005 2 transistor

Abstract: 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A
Contextual Info: r c G o n ia 7 i D EV ELO PM EN T DATA T his data sheet contains advance information and MJE 13004 MJE 13005 specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 25E D -T -S 3 -J 3 * SILICON DIFFU SED PO W ER T R A N SIST O R S High-voltage, high-speed glass passivated npn power transistor in a T 0 -2 2 0 envelope intended for use