13003 J TRANSISTOR Search Results

13003 J TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

13003 J TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CDT13003 Abstract: cdt 13003 SR 13003 b SR 13003 x 13003 TRANSISTOR PIN DETAILS 13003 TRANSISTOR npn SR 13003 K X 13003 E 13003 TRANSISTOR 13003 A Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	CDT13003 O-220 C-120 CDT13003Rev 230306D CDT13003 cdt 13003 SR 13003 b SR 13003 x 13003 TRANSISTOR PIN DETAILS 13003 TRANSISTOR npn SR 13003 K X 13003 E 13003 TRANSISTOR 13003 A
SR 13003 b Abstract: transistor SR 13003 SR 13003 TRANSISTOR SR 13003 D SR 13003 SR 13003 K 13003 TRANSISTOR npn to220 transistor 13003 k g 13003 c s 13003 TRANSISTOR Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	CDT13003 O-220 C-120 CDT13003Rev 230306D SR 13003 b transistor SR 13003 SR 13003 TRANSISTOR SR 13003 D SR 13003 SR 13003 K 13003 TRANSISTOR npn to220 transistor 13003 k g 13003 c s 13003 TRANSISTOR
13003 TRANSISTOR Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte Text: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range	Original	PDF	O--220 100TYP 540TYP 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
transistor 13003d Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value	Original	PDF	Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
mj 13003 Abstract: transistor MJ 13003 13003CD E13003 13003c E13003C E 13003 TRANSISTOR 13003 transistor HMJE13003E transistor 13003 Text: HI-SINCERITY Spec. No. : HE200502 Issued Date : 2005.10.01 Revised Date : 2009.10.14 Page No. : 1/4 MICROELECTRONICS CORP. HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls	Original	PDF	HE200502 HMJE13003E O-220 Di120 183oC 217oC 260oC mj 13003 transistor MJ 13003 13003CD E13003 13003c E13003C E 13003 TRANSISTOR 13003 transistor HMJE13003E transistor 13003
mj 13003 Abstract: transistor MJ 13003 E13003 E13003E Transistor C G 774 6-1 HMJE13003D HD200207 13003e E 13003 HMJE13003D Datasheet Text: HI-SINCERITY Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 2007.09.04 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls	Original	PDF	HD200207 HMJE13003D O-126ML 10sec mj 13003 transistor MJ 13003 E13003 E13003E Transistor C G 774 6-1 HMJE13003D HD200207 13003e E 13003 HMJE13003D Datasheet
transistor ST 13003 w, TO-126 Abstract: electronic ballast for fluorescent lighting 13003 electronic ballast for fluorescent lighting ST13003 transistor electronic ballast by transistor 13003 electronic ballast 13003 st 13003 TRANSISTOR npn TR 13003 transistor E 13003 TRANSISTOR transistor 13003 Text: ST13003-K High voltage fast-switching NPN power transistor General features • Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting CFL	Original	PDF	ST13003-K OT-32 transistor ST 13003 w, TO-126 electronic ballast for fluorescent lighting 13003 electronic ballast for fluorescent lighting ST13003 transistor electronic ballast by transistor 13003 electronic ballast 13003 st 13003 TRANSISTOR npn TR 13003 transistor E 13003 TRANSISTOR transistor 13003
transistor MJ 13003 Abstract: mj 13003 PC 13003 TRANSISTOR circuit transistor sw 13003 HE 13003 sw 13003 PC 13003 TRANSISTOR transistor 13003 C 13003 TRANSISTOR 2SC5832 Text: Ordering number : ENN7287 2SC5832 NPN Epitaxial Planar Silicon Transistor 2SC5832 Driver Applications Applications • Package Dimensions Suitable for use in switching of inductive load motor drivers, printer hammer drivers, relay drivers . unit : mm 2045B	Original	PDF	ENN7287 2SC5832 2045B 2SC5832] 2044B transistor MJ 13003 mj 13003 PC 13003 TRANSISTOR circuit transistor sw 13003 HE 13003 sw 13003 PC 13003 TRANSISTOR transistor 13003 C 13003 TRANSISTOR 2SC5832
X 13003 Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn Text: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	PDF	r-33-11 00IHb34 T-33-11 X 13003 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
HF 13003 Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003 Text: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	PDF	T-33-11 HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003
E 13003 TRANSISTOR Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	PDF	T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
transistor sw 13003 Abstract: sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor Text: Te m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIG H SPEED technology Very low dynam ic saturation • Glass passivation Very low operating tem perature • Very short sw itching tim es High reverse voltage	OCR Scan	PDF	TD13002 TD13003 ol13002 T0252 transistor sw 13003 sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor
g 13003 Abstract: LM 13003 Text: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa	OCR Scan	PDF	T/13003 SGS13002, SGS13003 OT-82 SGS13002T, SGS13003T MJE13002 O-126, SGS13002 g 13003 LM 13003
transistor LB 13003 C Abstract: t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR Text: S G S -T H O M S O N E fi M lF3m i g ? [ M 0igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:	OCR Scan	PDF	ST130Q3 transistor LB 13003 C t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR

transistor 13003 AD Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003 Text: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:	OCR Scan	PDF	ST13003 OT-32 O-126) transistor 13003 AD transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
MOTOROLA 13003 Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER	OCR Scan	PDF	MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
13003 TRANSISTOR equivalent Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS	OCR Scan	PDF	MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan	PDF
transistor 13003 AD Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)	OCR Scan	PDF	OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
MHT1810 Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	PDF	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
RT3062 Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
transistor TF78 Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
MP2143 Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
DTS108 Abstract: 2n2585 DTS103 DTS106 BUY27 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	PDF	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 DTS108 2n2585 DTS103 DTS106 BUY27

13003 J TRANSISTOR Search Results

13003 J TRANSISTOR Result Highlights (6)

13003 J TRANSISTOR Datasheets Context Search

CDT13003

SR 13003 b

13003 TRANSISTOR

transistor 13003d

mj 13003

mj 13003

transistor ST 13003 w, TO-126

transistor MJ 13003

X 13003

HF 13003

E 13003 TRANSISTOR

transistor sw 13003

g 13003

transistor LB 13003 C

transistor 13003 AD

MOTOROLA 13003

13003 TRANSISTOR equivalent

TFK diodes BYW 76

transistor 13003 AD

MHT1810

RT3062

transistor TF78

MP2143

DTS108