Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    12W TRANSISTOR Search Results

    12W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD 12W

    Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W transistor SMD 12W smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74

    VJ1206Y104KXAT

    Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W VJ1206Y104KXAT 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273

    GSM repeater circuit

    Abstract: EDS-102930 repeater gsm Rogers 4350 datasheet AN060 XD010-22S-D2F GSM repeater power amplifier module
    Text: XD010-22S-D2F 1805-1880 MHz Class A/AB 12W Power Amplifier Module Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


    Original     		PDF XD010-22S-D2F XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 GSM repeater circuit repeater gsm Rogers 4350 datasheet AN060 GSM repeater power amplifier module

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Text: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		PDF XD010-24S-D2F XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 GSM repeater circuit Rogers 4350 datasheet AN060

    Untitled

    Abstract: No abstract text available
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF 56-Pin MAX9741 MAX9741 MAX9741ETN+ MAX9741ETN

    TDA2030 equivalent

    Abstract: TDA2006 equivalent 1N4001P tda2030 class ab amplifier TDA2006 tda2006 bridge configuration
    Text: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high


    Original     		PDF TDA2006 TDA2006 TDA2030. TDA2030 equivalent TDA2006 equivalent 1N4001P tda2030 class ab amplifier tda2006 bridge configuration

    AN3019

    Abstract: MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE AN3016
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias


    Original     		PDF MAAPGM0078-DIE MAAPGM0078-DIE AN3019 MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 AN3016

    ferrite bead tdk

    Abstract: 24v Audio amplifier class d EN55022B MAX941 MAX974 MAX9741 MAX9741ETN Class AB AMPLIFIER 4W
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF MAX9741 ferrite bead tdk 24v Audio amplifier class d EN55022B MAX941 MAX974 MAX9741ETN Class AB AMPLIFIER 4W

    Untitled

    Abstract: No abstract text available
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF MAX9741

    Untitled

    Abstract: No abstract text available
    Text: 19-3887; Rev 0; 2/06 KIT ATION EVALU E L B AVAILA 12W+12W, Low-EMI, Spread-Spectrum, Stereo, Class D Amplifier Features The MAX9741 stereo Class D audio power amplifier provides Class AB amplifier performance with Class D efficiency, conserving board space and eliminating the


    Original     		PDF 56-Pin MAX9741 MAX9741 MAX9741ETN+ MAX9741ETN

    LX1708

    Abstract: 1N5817 LX1708ILQ TP10 12W 04 SMD MOSFET stereo audio amplifier 4 w 4 ohm Stereo Power Amplifier Circuit Diagram
    Text: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Filter Free Operation ƒ 12W +12W Output Power @ 4Ω load: THD+N < 1% ƒ High Efficiency > 85% ƒ Full Audio Bandwidth: 20Hz to 20kHz ƒ Low Distortion < 0.4% @ 30%


    Original     		PDF LX1708 20kHz LX1708 1N5817 LX1708ILQ TP10 12W 04 SMD MOSFET stereo audio amplifier 4 w 4 ohm Stereo Power Amplifier Circuit Diagram

    TDA2030 equivalent

    Abstract: LAYOUT TDA2006 tda2006 10W TDA2030 TDA2030 pin layout circuit diagram TDA2030 TDA2006 equivalent tda2030 AUDIO AMPLIFIER CIRCUIT DIAGRAM TDA2006H amplifier circuit tda2006
    Text: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high


    Original     		PDF TDA2006 TDA2006 TDA2030. TDA2030 equivalent LAYOUT TDA2006 10W TDA2030 TDA2030 pin layout circuit diagram TDA2030 TDA2006 equivalent tda2030 AUDIO AMPLIFIER CIRCUIT DIAGRAM TDA2006H amplifier circuit tda2006

    tda2006

    Abstract: TDA2030 equivalent TDA2006 equivalent LAYOUT TDA2006 TDA2030 pin layout circuit diagram TDA2030 amplifier circuit tda2030 LAYOUT PENTAWATT TDA2006H test TDA2006
    Text: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class ”AB” amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high


    Original     		PDF TDA2006 TDA2006 TDA2030. TDA2030 equivalent TDA2006 equivalent LAYOUT TDA2006 TDA2030 pin layout circuit diagram TDA2030 amplifier circuit tda2030 LAYOUT PENTAWATT TDA2006H test TDA2006

    TDA2030 equivalent

    Abstract: TDA2030 pin layout TDA2006 equivalent TDA2030 TDA2006 LAYOUT TDA2030 LAYOUT TDA2006 TDA2030 bridge circuit diagram TDA2030 1N4001
    Text: TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Ω load and 8W on a 8Ω . The TDA2006 provides high


    Original     		PDF TDA2006 TDA2006 TDA2030. TDA2030 equivalent TDA2030 pin layout TDA2006 equivalent TDA2030 LAYOUT TDA2030 LAYOUT TDA2006 TDA2030 bridge circuit diagram TDA2030 1N4001

    Untitled

    Abstract: No abstract text available
    Text: LX1708 15+15W Stereo Filterless Class-D Amplifier TM P RODUCTION D ATA S HEET ̇ Filter Free Operation ̇ 12W +12W Output Power @ 4Ω load: THD+N < 1% ̇ High Efficiency > 85% ̇ Full Audio Bandwidth: 20Hz to 20kHz ̇ Low Distortion < 0.4% @ 30% Max Power, 1kHz


    Original     		PDF LX1708 20kHz

    MAAPGM0078-DIE

    Abstract: No abstract text available
    Text: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev A Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both


    Original     		PDF MAAPGM0078-DIE MAAPGM0078-DIE

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    TDA2030 equivalent

    Abstract: equivalent FOR TDA2006
    Text: F Z J S C S -T H O M S O N TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 4Q load


    OCR Scan     		PDF TDA2006 TDA2006 r-----------------------126 TDA2030 equivalent equivalent FOR TDA2006

    TDA2006

    Abstract: tda2006 bridge configuration
    Text: SGS-THOMSON TDA2006 12W AUDIO AMPLIFIER DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended tor use as a low frequency class ”AB” amplifier. At ±12V, d = 10 % typically it provides 12W output power on a 40, load and 8W on a 8£2 . The TDA2006 provides high


    OCR Scan     		PDF TDA2006 TDA2006 theTDA20tronics. tda2006 bridge configuration

    TDA2030 equivalent

    Abstract: No abstract text available
    Text: rZ J S G S -T H O M S O N TDA2006 12W AUDIO AMPLIFIER The TDA2006 is a m onolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "A B " amplifier. A t ± 12V, d = 10% typically it provides 12W output power on a load and 8W on a 8 £1. The TDA2006 pro­


    OCR Scan     		PDF TDA2006 TDA2006 TDA2030 equivalent