12W 79 Search Results

Contextual Info: V7 - 12W Series MOTIEN TECHNOLOGY 12W 2:1 Regulated Single & Dual output Features T he V7 series is a family of cost effective 12W single & dual output DC-DC converters. These converters are made with nickle-coated brass case in a 2”x1” with high performance features such as 1500 VDC input/output isolation voltage, continuous short circuit

Contextual Info: V7 - 12W Series MOTIEN TECHNOLOGY 12W 2:1 Regulated Single & Dual output Features T he V7 series is a family of cost effective 12W single & dual output DC-DC converters. These converters are made with nickle-coated brass case in a 2”x1” with high performance features such as 1500 VDC input/output isolation voltage, continuous short circuit

Contextual Info: V7 - 12W Series MOTIEN TECHNOLOGY 12W 2:1 Regulated Single & Dual output Features T he V7 series is a family of cost effective 12W single & dual output DC-DC converters. These converters are made with nickle-coated brass case in a 2”x1” with high performance features such as 1500 VDC input/output isolation voltage, continuous short circuit

NTE7146

Contextual Info: NTE7146 Integrated Circuit Dual 12W + 12W Stereo Amplifier w/Muting Description: The NTE7146 is a class AB dual audio power amplifier assembled in an 11–Lead Staggered SIP type package specifically designed for high quality sound applications such as HI–FI music centers and

12w 99

Abstract: ZB6CS-150-12W ZB6CS-150-12W-N ZB6CS-150-12W-S
Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω 50 to 150 MHz Maximum Ratings Operating Temperature Storage Temperature ZB6CS-150-12W Features • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ. -55°C to 90°C

Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω 50 to 150 MHz Maximum Ratings Operating Temperature Storage Temperature ZB6CS-150-12W Features • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ. -55°C to 90°C

ZB6CS-150-12W

Abstract: ZB6CS-150-12W-N ZB6CS-150-12W-S
Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω 50 to 150 MHz Maximum Ratings Operating Temperature Storage Temperature ZB6CS-150-12W Features • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ. -55°C to 90°C

Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω 50 to 150 MHz Maximum Ratings Operating Temperature Storage Temperature ZB6CS-150-12W Features • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ. -55°C to 90°C

Contextual Info: 532BXY Diodes Miscellaneous Diode Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS DescriptionPt 12W max;Freq. 7-9GHz.

Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω 50 to 150 MHz Maximum Ratings Operating Temperature Storage Temperature ZB6CS-150-12W Features • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ. -55°C to 90°C

ZB6CS-150-12W

Abstract: ZB6CS-150-12W-N ZB6CS-150-12W-S
Contextual Info: Coaxial High Power Combiner 6 Way-0° 50Ω ZB6CS-150-12W 50 to 150 MHz Maximum Ratings Features Operating Temperature -55°C to 90°C Storage Temperature -55°C to 100°C • input power, up to 12W input power • low insertion loss, 0.5 dB typ. • high isolation, 32 dB typ.

SRW20EF

Abstract: SRW20EF-X46H014 SMD EZ 648 fan102 PC47 TDK variac used as a battery charger NICHiCON KZ SRW20EF-X nichicon vR FAN102SZ
Contextual Info: www.fairchildsemi.com FEB226 User’s Guide Universal Input 12W LED Ballast Featured Fairchild Product: FAN102SZ Page 1 of 43 Rev 1.0, 07/2006 www.fairchildsemi.com

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

ZB6CS-150-12W

Contextual Info: 6 Way-0° Power Splitter/Combiner ZB6CS-150-12W Typical Performance Data dB (MHz) 50.0 53.0 56.0 59.0 60.0 63.0 66.0 69.0 70.0 73.0 76.0 79.0 80.0 83.0 86.0 89.0 90.0 93.0 96.0 99.0 100.0 103.0 106.0 109.0 110.0 113.0 116.0 119.0 120.0 123.0 126.0 129.0

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

78s12

Abstract: RD12MVS1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

ZB6CS-150-12W

Abstract: 530 834
Contextual Info: 6 Way-0° Power Splitter/Combiner ZB6CS-150-12W Typical Performance Data FREQ. dB (MHz) 50.0 53.0 56.0 59.0 60.0 63.0 66.0 69.0 70.0 73.0 76.0 79.0 80.0 83.0 86.0 89.0 90.0 93.0 96.0 99.0 100.0 103.0 106.0 109.0 110.0 113.0 116.0 119.0 120.0 123.0 126.0

transistor+SMD+12W+MOSFET

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

NPH10S4815Ei

Abstract: NPH10S4815EiC TLC555 an 7314 NPH10S2405EiC NPH10S4803IC NPH10S
Contextual Info: NPH10S Series Isolated 10W Single Output DC/DC Converters SELECTION GUIDE Order Code1 FEATURES RoHS compliant High efficiency to 87% Power density up to 1.5Wcm3 UL 94V-0 package material Industry standard pinout Surge rating to 12W Non latching current limit

Contextual Info: HI-8190H, HI-8191H, HI-8192H December 2013 12W, Quad, SPST, 3.3V / 5.0V compatible Analog Switch with High Operating Temperature GENERAL DESCRIPTION FEATURES The HI-8190H family are quad analog CMOS switches fabricated with Silicon-on-Insulator SOI technology for latch-up

hitron-e

Abstract: Short Form Catalog
Contextual Info: H HiTRON PRODUCTS SHORT FORM CATALOG EXTERNAL ADAPTOR SWITCHING MODE POWER SUPPLIES WALLMOUNT & DESKTOP FORMATS MODEL NO POWER/DENSITY INPUT OUTPUT # DATE: Jan. 1H, 2011 SIZE & WEIGHT 10-12W Output 1.3-1.56W/cubic inch. 90-264Vac Universal Input Single & Dual.

NPH10S2403EiC

Abstract: NPH10S4812IC NPH10S2412iC NPH10S
Contextual Info: NPH10S Series www.murata-ps.com Isolated 10W Single Output DC/DC Converters SELECTION GUIDE Order Code1 FEATURES RoHS compliant High efficiency to 87% Power density up to 1.5Wcm3 UL1950 recognized Industry standard pinout Surge rating to 12W Non latching current limit