Switching Regulator SOT-23-8
Abstract: LTM4602 LTM4608 SOT-23-8 weight LTM4601 LTM4603 LTC2910 LTC3823 LTC4261 1.8V DFN8
Text: Linear Technology Chronicle High Performance Analog Solutions VOL 16 NO. 1 FOCUS. Solutions for AdvancedTCA AMC AMC RTN A DC/DC 12V RTN B DC/DC 12V LTM4601 & LTM4603 µMODULE CONVERTER DC/DC LTC4355 DIODE-OR CONTROLLER & FUSE MONITOR LTC4307 I2C HOT SWAP &
|
Original
|
PDF
|
LTM4601
LTM4603
LTC4355
LTC4307
LTC4261
LTC3823
LTC2910
LTC2928
Hi215)
Corporation/0407/Printed
Switching Regulator SOT-23-8
LTM4602
LTM4608
SOT-23-8 weight
LTM4601
LTM4603
LTC2910
LTC3823
LTC4261
1.8V DFN8
|
HGT1S5N120CNDS
Abstract: HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
|
Original
|
PDF
|
HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
|
5N120CND
Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
|
Original
|
PDF
|
HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5N120CND
5n120
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
transistors equivalent
|
5n120
Abstract: 5N120CND 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 5N120CN
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
|
Original
|
PDF
|
HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5n120
5N120CND
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
5N120CN
|
5N120CND
Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
|
Original
|
PDF
|
HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5N120CND
5n120
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
|
G5N120
Abstract: HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 TB334
Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
|
Original
|
PDF
|
HGTP5N120CN,
HGT1S5N120CNS
HGTP5N120CN
HGT1S5N120CNS
G5N120
HGT1S5N120CNS9A
LD26
RHRD4120
TB334
|
HGT1S5N120CNS
Abstract: HGT1S5N120CNS9A HGTP5N120CN RHRD4120 TB334 G5N120
Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
|
Original
|
PDF
|
HGTP5N120CN,
HGT1S5N120CNS
HGTP5N120CN
HGT1S5N120CNS
HGT1S5N120CNS9A
RHRD4120
TB334
G5N120
|
HGT1S5N120CNS
Abstract: HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 TB334
Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
|
Original
|
PDF
|
HGTP5N120CN,
HGT1S5N120CNS
HGTP5N120CN
HGT1S5N120CNS
HGT1S5N120CNS9A
LD26
RHRD4120
TB334
|
G5N120CN
Abstract: TB334 HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 G5N120
Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
|
Original
|
PDF
|
HGTP5N120CN,
HGT1S5N120CNS
HGTP5N120CN
HGT1S5N120CNS
G5N120CN
TB334
HGT1S5N120CNS9A
LD26
RHRD4120
G5N120
|
48v 2500w
Abstract: PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb FH02500
Text: 48V 2500W POWER SUPPLY SPECIFICATION REVISION HISTORY REV. EC NO. A 0 0 DESCRIPTION INITIAL RELEASE RESP.ENG DATE NORI MIURA 2/5/2010 Hot-Swap / Redundant Front End Power Supply 2500 WATTS @ 200-240VAC, 1200W@100-120VAC, 47-63 HZ OUTPUT: +48V @ 52A High Line , 25A (Low Line) , +12.5 V STB @ 2.0 A
|
Original
|
PDF
|
200-240VAC,
100-120VAC,
FH02500
28w/in3
FH02500
IEC60950
IEC60950
48v 2500w
PD78F0511GA-8EU-A
PD78F0511GA-8EU
multi output switch mode transformer for stb
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7405 S E M I C O N D U C T O R September 1997 Formerly Available As FSF150R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Harris Semiconductor
|
Original
|
PDF
|
JANSR2N7405
1-800-4-HARRIS
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
PDF
|
JANSR2N7405
FSF150R4
|
MIL-S-19500
Abstract: fsf055 FS055 4052 BR 2E12 FSF055D FSF055R
Text: S E M I C O N D U C T O R FSF055D, FSF055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 25A Note 1 , 60V, rDS(ON) = 0.020Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects
|
Original
|
PDF
|
FSF055D,
FSF055R
36MeV/mg/cm2
O-254AA
1-800-4-HARRIS
MIL-S-19500
fsf055
FS055
4052 BR
2E12
FSF055D
FSF055R
|
2E12
Abstract: FSF150R4 JANSR2N7405
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
PDF
|
JANSR2N7405
FSF150R4
2E12
FSF150R4
JANSR2N7405
|
|
|
Untitled
Abstract: No abstract text available
Text: CSD97374Q4M www.ti.com SLPS382A – JANUARY 2013 – REVISED MARCH 2013 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 23 Over 92% System Efficiency at 15A Max Rated Continuous Current 25A, Peak 60A
|
Original
|
PDF
|
CSD97374Q4M
SLPS382A
|
fsf150
Abstract: MIL-S-19500 2E12 FSF150D FSF150R
Text: S E M I C O N D U C T O R FSF150D, FSF150R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects
|
Original
|
PDF
|
FSF150D,
FSF150R
100kRAD
36MeV/mg/cm2
O-254AA
1-800-4-HARRIS
fsf150
MIL-S-19500
2E12
FSF150D
FSF150R
|
Untitled
Abstract: No abstract text available
Text: CSD97374Q4M www.ti.com SLPS382 – JANUARY 2013 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 23 Over 92% System Efficiency at 15A Max Rated Continuous Current 25A, Peak 60A
|
Original
|
PDF
|
CSD97374Q4M
SLPS382
|
Untitled
Abstract: No abstract text available
Text: CSD97374Q4M www.ti.com SLPS382A – JANUARY 2013 – REVISED MARCH 2013 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1 23 Over 92% System Efficiency at 15A Max Rated Continuous Current 25A, Peak 60A
|
Original
|
PDF
|
CSD97374Q4M
SLPS382A
|
integrated circuits equivalents list
Abstract: No abstract text available
Text: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 25A, 60V, rDS ON = 0.020Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
PDF
|
FSF055D,
FSF055R
integrated circuits equivalents list
|
MIL-S-19500
Abstract: FSF150R3 2E12 FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
PDF
|
FSF150D,
FSF150R
MIL-S-19500
FSF150R3
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
|
Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
PDF
|
FSF150D,
FSF150R
Rad Hard in Fairchild for MOSFET
|
2E12
Abstract: FSF150R4 JANSR2N7405 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 70 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 70 m, d rd, Features Description • 25A (Note), 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has
|
Original
|
PDF
|
JANSR2N7405
FSF150R4
2E12
FSF150R4
JANSR2N7405
Rad Hard in Fairchild for MOSFET
|
2E12
Abstract: FSF055D FSF055D1 FSF055D3 FSF055R FSF055R1 FSF055R3
Text: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 60V, rDS ON = 0.020Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
PDF
|
FSF055D,
FSF055R
2E12
FSF055D
FSF055D1
FSF055D3
FSF055R
FSF055R1
FSF055R3
|
TA17656
Abstract: No abstract text available
Text: JANSR2N7405 & HAfSSS Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A Note , 100V, rDS(ON) = 0.070Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
OCR Scan
|
PDF
|
FSF150R4
JANSR2N7405
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
TA17656
|
